scholarly journals Exploiting the single-photon detection performance of InGaAs negative-feedback avalanche diode with fast active quenching

2021 ◽  
Vol 29 (7) ◽  
pp. 10150
Author(s):  
Junliang Liu ◽  
Yining Xu ◽  
Yongfu Li ◽  
Zhaojun Liu ◽  
Xian Zhao
Keyword(s):  
Negative Feedback ◽  
Single Photon ◽  
Detection Performance ◽  
Single Photon Detection ◽  
Photon Detection ◽  
Avalanche Diode

scholarly journals Custom-Technology Single-Photon Avalanche Diode Linear Detector Array for Underwater Depth Imaging

Sensors ◽  
2021 ◽  
Vol 21 (14) ◽  
pp. 4850
Author(s):  
Aurora Maccarone ◽  
Giulia Acconcia ◽  
Ulrich Steinlehner ◽  
Ivan Labanca ◽  
Darryl Newborough ◽  
...  
Keyword(s):  
Linear Array ◽  
Imaging System ◽  
Single Photon ◽  
Photon Counting ◽  
Single Photon Detection ◽  
Photon Detection ◽  
Central Wavelength ◽  
Depth Imaging ◽  
Single Photon Counting ◽  
Avalanche Diode

We present an optical depth imaging system suitable for highly scattering underwater environments. The system used the time-correlated single-photon counting (TCSPC) technique and the time-of-flight approach to obtain depth profiles. The single-photon detection was provided by a linear array of single-photon avalanche diode (SPAD) detectors fabricated in a customized silicon fabrication technology for optimized efficiency, dark count rate, and jitter performance. The bi-static transceiver comprised a pulsed laser diode source with central wavelength 670 nm, a linear array of 16 × 1 Si-SPAD detectors, with a dedicated TCSPC acquisition module. Cylindrical lenses were used to collect the light scattered by the target and image it onto the sensor. These laboratory-based experiments demonstrated single-photon depth imaging at a range of 1.65 m in highly scattering conditions, equivalent up to 8.3 attenuation lengths between the system and the target, using average optical powers of up to 15 mW. The depth and spatial resolution of this sensor were investigated in different scattering conditions.

High-Temperature Single Photon Detection Performance of 4H-SiC Avalanche Photodiodes

2014 ◽  
Vol 26 (11) ◽  
pp. 1136-1138 ◽  
Author(s):  
Dong Zhou ◽  
Fei Liu ◽  
Hai Lu ◽  
Dunjun Chen ◽  
Fangfang Ren ◽  
...  
Keyword(s):  
High Temperature ◽  
Single Photon ◽  
Avalanche Photodiodes ◽  
Detection Performance ◽  
Single Photon Detection ◽  
Photon Detection

scholarly journals InGaAs/InAlAs single photon avalanche diode for 1550 nm photons

2016 ◽  
Vol 3 (3) ◽  
pp. 150584 ◽  
Author(s):  
Xiao Meng ◽  
Shiyu Xie ◽  
Xinxin Zhou ◽  
Niccolò Calandri ◽  
Mirko Sanzaro ◽  
...  
Keyword(s):  
Count Rate ◽  
Detection Efficiency ◽  
Single Photon ◽  
Timing Jitter ◽  
Single Photon Detection ◽  
Dark Count ◽  
Absorption Region ◽  
Photon Detection ◽  
Avalanche Diode ◽  
Dark Count Rate

A single photon avalanche diode (SPAD) with an InGaAs absorption region, and an InAlAs avalanche region was designed and demonstrated to detect 1550 nm wavelength photons. The characterization included leakage current, dark count rate and single photon detection efficiency as functions of temperature from 210 to 294 K. The SPAD exhibited good temperature stability, with breakdown voltage dependence of approximately 45 mV K −1 . Operating at 210 K and in a gated mode, the SPAD achieved a photon detection probability of 26% at 1550 nm with a dark count rate of 1 × 10 8  Hz. The time response of the SPAD showed decreasing timing jitter (full width at half maximum) with increasing overbias voltage, with 70 ps being the smallest timing jitter measured.

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