scholarly journals On the modeling of thermal and free carrier nonlinearities in Silicon On Insulator microring resonators

2020 ◽  
Author(s):  
Massimo Borghi ◽  
Mattia Mancinelli ◽  
Davide Bazzanella ◽  
Lorenzo Pavesi
Keyword(s):  
Free Carrier ◽  
Silicon On Insulator ◽  
Microring Resonators

TUNABLE ASYMMETRIC FANO LINESHAPES IN SILICON-BASED MICRORING RESONATORS WITH FEEDBACK

2011 ◽  
Vol 20 (03) ◽  
pp. 357-366 ◽  
Author(s):  
SANTHAD PITAKWONGSAPORN ◽  
SURASAK CHIANGGA
Keyword(s):  
Continuous Wave ◽  
Operating Regime ◽  
Free Carrier ◽  
Photon Absorption ◽  
Microring Resonators ◽  
Free Carrier Absorption ◽  
Coupling Coefficients ◽  
Linear Absorption ◽  
Carrier Absorption ◽  
Silicon Based

We theoretically examine the Fano lineshapes of silicon-based compound microring resonators consisting of a single resonator channel dropping filter linked to a loop as a feedback structure. All possible optical effects for the continuous-wave operating regime, such as linear absorption or scattering, two-photon absorption, free-carrier absorption and dispersion, thermo-optics, are simultaneously considered. We show that sharp Fano resonances can be tuned by variation in the coupling coefficients, length of feedback loop, effective free carrier lifetime and the temperature inside the device. Tunable Fano lineshapes open up opportunities for applications in sensing, computing, and communications.

Free Carrier Absorption Loss of p-i-n Silicon-On-Insulator (SOI) Phase Modulator

2011 ◽  
Author(s):  
H. Hazura ◽  
A. R. Hanim ◽  
B. Mardiana ◽  
Sahbudin Shaari ◽  
P. S. Menon ◽  
...  
Keyword(s):  
Free Carrier ◽  
Silicon On Insulator ◽  
Phase Modulator ◽  
Free Carrier Absorption ◽  
Absorption Loss ◽  
Carrier Absorption

Sensitive label-free and compact biosensor based on concentric silicon-on-insulator microring resonators

2009 ◽  
Vol 48 (25) ◽  
pp. F90 ◽  
Author(s):  
Xiaohui Li ◽  
Ziyang Zhang ◽  
Shenying Qin ◽  
Tao Wang ◽  
Fangfei Liu ◽  
...  
Keyword(s):  
Silicon On Insulator ◽  
Microring Resonators ◽  
Label Free

Performance of the Active Microring Resonator Based on SOI Rib Waveguide

2012 ◽  
Vol 462 ◽  
pp. 375-379
Author(s):  
B. Mardiana ◽  
A.R. Hanim ◽  
H. Hazura ◽  
S. Shaari ◽  
P. Susthitha Menon ◽  
...  
Keyword(s):  
Refractive Index ◽  
Ring Resonator ◽  
Refractive Index Change ◽  
Electrical Signal ◽  
Free Carrier ◽  
Simulation Software ◽  
Microring Resonator ◽  
Silicon On Insulator ◽  
Carrier Injection ◽  
Rib Waveguide

Micro-ring resonator based on silicon-on-insulator (SOI) has been extensively studied due to its many advantages, thus promising to improve the optoelectronic integrated circuit performance. This paper highlights the study of the free carrier injection effect on the silicon rib waveguide with p-i-n diode structure integrated in the SOI micro-ring resonator. The free carrier concentrations have been modulated by the electrical signal that can cause change of refractive index of the micro-ring resonator. The device performances are predicted by using numerical modelling software 2D SILVACO and Finite Difference Time Domain method simulation software RSOFT. The results show the change of refractive index is maximized at a greater applied voltage. A shift in resonant wavelength of around 6.7 nm was predicted at 0.9V with 1.14x10-3refractive index change. It is also shown that 8.5dB change of the output response obtained through the output.

Analysis of Silicon-On-Insulator (SOI) Buried Waveguide Phase Modulator

2012 ◽  
Vol 462 ◽  
pp. 532-535
Author(s):  
Abdul Razak Hanim ◽  
Haroon Hazura ◽  
Bidin Mardiana ◽  
Shaari Sahbudin ◽  
P. Susthitha Menon
Keyword(s):  
Refractive Index ◽  
Single Mode ◽  
Free Carrier ◽  
Silicon On Insulator ◽  
Phase Modulator ◽  
Carrier Injection ◽  
Dispersion Effect ◽  
Optical Phase ◽  
Real Refractive Index ◽  
Simulation Package

The analyses of the simulation of a single mode buried waveguide optical phase modulator based on SOI material are here reported. The structure has been simulated by Athena from Silvaco simulation package. The buried waveguide is created by doping phosphorus with concentration of 10e15 cm-3 into the substrate. The real refractive index and the absorption coefficient of the waveguide are changed using the free carrier dispersion effect via carrier injection of a pn junction. The efficiency, VπLπ is calculated and the performance is compared with that of the rib waveguide optical phase modulator of the same material and dimensions. Simulation shows that the device can be an efficient device for application in intensity modulation.

Hybrid Integration of High-Q Chalcogenide Microring Resonators on Silicon-on-insulator

2020 ◽  
Author(s):  
Philippe Jean ◽  
Alexandre Douaud ◽  
Sophie LaRochelle ◽  
Younes Messaddeq ◽  
Wei Shi
Keyword(s):  
Silicon On Insulator ◽  
Microring Resonators ◽  
Hybrid Integration ◽  
High Q

scholarly journals Experimental realization of an optical digital comparator using silicon microring resonators

Nanophotonics ◽  
2018 ◽  
Vol 7 (3) ◽  
pp. 669-675 ◽  
Author(s):  
Yonghui Tian ◽  
Huifu Xiao ◽  
Xiaosuo Wu ◽  
Zilong Liu ◽  
Yinghao Meng ◽  
...  
Keyword(s):  
Electrical Signal ◽  
Silicon On Insulator ◽  
Oxide Semiconductor ◽  
Microring Resonators ◽  
Digital Signals ◽  
Experimental Realization ◽  
Electrical Signals ◽  
Operation Speed ◽  
Digital Comparator ◽  
Comparison Results

AbstractWe propose and experimentally demonstrate a silicon photonic circuit that can perform the comparison operation of two-bit digital signals based on microring resonators (MRRs). Two binary electrical signals regarded as two operands of desired comparison digital signals are applied to three MRRs to modulate their resonances through the microheaters fabricated on the top of MRRs, respectively (here, one binary electrical signal is applied to two MRRs by a 1×2 electrical power splitter, which means that the two MRRs are modulated by the same binary electrical signal). The comparison results of two binary electrical signals can be obtained at two output ports in the form of light. The proposed device is fabricated on a silicon-on-insulator substrate using the complementary metal-oxide-semiconductor fabrication process, and the dynamic characterization of the device with the operation speed of 10 kbps is demonstrated successfully.

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