scholarly journals Single-layer metamaterial bolometer for sensitive detection of low-power terahertz waves at room temperature

2020 ◽  
Vol 28 (12) ◽  
pp. 17143
Author(s):  
Yongjune Kim ◽  
Duckjong Kim ◽  
Sang-Hun Lee ◽  
Minah Seo ◽  
Hyun-June Jung ◽  
...  
2021 ◽  
Vol 6 (32) ◽  
pp. 8338-8344
Author(s):  
Xingyan Shao ◽  
Shuo Wang ◽  
Leqi Hu ◽  
Tingting Liu ◽  
Xiaomei Wang ◽  
...  

Electronics ◽  
2021 ◽  
Vol 10 (7) ◽  
pp. 805
Author(s):  
Shi Zuo ◽  
Jianzhong Zhao ◽  
Yumei Zhou

This article presents a low power digital controlled oscillator (DCO) with an ultra low power duty cycle correction (DCC) scheme. The DCO with the complementary cross-coupled topology uses the controllable tail resistor to improve the tail current efficiency. A robust duty cycle correction (DCC) scheme is introduced to replace self-biased inverters to save power further. The proposed DCO is implemented in a Semiconductor Manufacturing International Corporation (SMIC) 40 nm CMOS process. The measured phase noise at room temperature is −115 dBc/Hz at 1 MHz offset with a dissipation of 210 μμW at an oscillating frequency of 2.12 GHz, and the resulin figure-of-merit is s −189 dBc/Hz.


Micromachines ◽  
2021 ◽  
Vol 12 (6) ◽  
pp. 641
Author(s):  
Yuan Zhai ◽  
Yi Xiang ◽  
Weiqing Yuan ◽  
Gang Chen ◽  
Jinliang Shi ◽  
...  

High sensitivity detection of terahertz waves can be achieved with a graphene nanomesh as grating to improve the coupling efficiency of the incident terahertz waves and using a graphene nanostructure energy gap to enhance the excitation of plasmon. Herein, the fabrication process of the FET THz detector based on the rectangular GNM (r-GNM) is designed, and the THz detector is developed, including the CVD growth and the wet-process transfer of high quality monolayer graphene films, preparation of r-GNM by electron-beam lithography and oxygen plasma etching, and the fabrication of the gate electrodes on the Si3N4 dielectric layer. The problem that the conductive metal is easy to peel off during the fabrication process of the GNM THz device is mainly discussed. The photoelectric performance of the detector was tested at room temperature. The experimental results show that the sensitivity of the detector is 2.5 A/W (@ 3 THz) at room temperature.


2016 ◽  
Vol 108 (1) ◽  
pp. 011106 ◽  
Author(s):  
Lei Dong ◽  
Chunguang Li ◽  
Nancy P. Sanchez ◽  
Aleksander K. Gluszek ◽  
Robert J. Griffin ◽  
...  

2016 ◽  
Vol 18 (34) ◽  
pp. 23695-23701 ◽  
Author(s):  
Bohayra Mortazavi ◽  
Alireza Ostadhossein ◽  
Timon Rabczuk ◽  
Adri C. T. van Duin

Mechanical properties of all-MoS2 single-layer structures at room temperature are explored using ReaxFF simulations.


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