Low Power, Room Temperature Systems for the Detection and Identification of Radionuclides from Atmospheric Nuclear Test

2013 ◽  
Author(s):  
Muren Chu ◽  
Sevag Terterian ◽  
David Ting
Keyword(s):  
Low Power ◽  
Room Temperature ◽  
Nuclear Test ◽  
Detection And Identification

Improvement of Gas Sensing of Uniform Ag 3 PO 4 Nanoparticles to NH 3 under the Assistant of LED Lamp with Low Power Consumption at Room Temperature

2021 ◽  
Vol 6 (32) ◽  
pp. 8338-8344
Author(s):  
Xingyan Shao ◽  
Shuo Wang ◽  
Leqi Hu ◽  
Tingting Liu ◽  
Xiaomei Wang ◽  
...  
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
Room Temperature ◽  
Gas Sensing ◽  
Low Power Consumption

scholarly journals A 2.1 GHz, 210 μW, —189 dBc/Hz DCO with Ultra Low Power DCC Scheme

Electronics ◽  
2021 ◽  
Vol 10 (7) ◽  
pp. 805
Author(s):  
Shi Zuo ◽  
Jianzhong Zhao ◽  
Yumei Zhou
Keyword(s):  
Low Power ◽  
Current Efficiency ◽  
Phase Noise ◽  
Duty Cycle ◽  
Semiconductor Manufacturing ◽  
Figure Of Merit ◽  
Room Temperature ◽  
Cmos Process ◽  
Ultra Low Power ◽  
Measured Phase

This article presents a low power digital controlled oscillator (DCO) with an ultra low power duty cycle correction (DCC) scheme. The DCO with the complementary cross-coupled topology uses the controllable tail resistor to improve the tail current efficiency. A robust duty cycle correction (DCC) scheme is introduced to replace self-biased inverters to save power further. The proposed DCO is implemented in a Semiconductor Manufacturing International Corporation (SMIC) 40 nm CMOS process. The measured phase noise at room temperature is −115 dBc/Hz at 1 MHz offset with a dissipation of 210 μμW at an oscillating frequency of 2.12 GHz, and the resulin figure-of-merit is s −189 dBc/Hz.

scholarly journals Compact CH4 sensor system based on a continuous-wave, low power consumption, room temperature interband cascade laser

2016 ◽  
Vol 108 (1) ◽  
pp. 011106 ◽  
Author(s):  
Lei Dong ◽  
Chunguang Li ◽  
Nancy P. Sanchez ◽  
Aleksander K. Gluszek ◽  
Robert J. Griffin ◽  
...  
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
Room Temperature ◽  
Continuous Wave ◽  
Sensor System ◽  
Low Power Consumption ◽  
Interband Cascade Laser

scholarly journals A new method for D2O to H2O leak detection and identification of leaky heat exchanger in PHWR by Cerenkov photon counting technique

2018 ◽  
Vol 33 (4) ◽  
pp. 325-333 ◽  
Author(s):  
Blangat Dileep ◽  
Ravi Mana ◽  
Karunakara Nerugundi ◽  
Sangameshwar Managanvi ◽  
Raj Tripathi
Keyword(s):  
Heat Exchanger ◽  
Low Power ◽  
Heat Exchangers ◽  
Count Rate ◽  
Liquid Scintillation ◽  
Leak Detection ◽  
Cherenkov Photon ◽  
Photon Count ◽  
Detection And Identification ◽  
Power Operation

In pressurized heavy water reactors, leaks from D2O primary coolant and moderator to H2O secondary coolant and other light-water systems in heat exchangers cannot be completely ruled out. High cost of D2O demands that its loss should be prevented to maximum extent possible. Traditionally D2O leak detection and identification of leaky heat exchanger is carried out by measurement of tritium activity in H2O. Since tritium emits low energy beta radiation, its concentration in H2O is measured by mixing it with liquid scintillation solution in a definite proportion in counting vial and counted in a Liquid Scintillation Analyzer. It is very sensitive method for leak detection, but identification of leaky heat exchanger is time consuming and may require low power operation or reactor shut down. In the new method, high energy beta emitting fission products, which emit Cherenkov photons in H2O, were used as the tracer. H2O was poured in 20 mL plastic vials without scintillator and counted on Liquid Scintillation Analyzer. D2O leak was identified by comparing the Cherenkov photon count rate with that of the blank. A discrimination ratio significantly higher than average Cherenkov photon count rate for all heat exchangers was used to identify the leaky one. The technique has advantageous over existing method of D2O leak detection, such as, (1) scintillation chemicals are not required (2) low power operation or reactor shut down is not required for identifying the leaky heat exchanger (3) no generation of radioactive chemical waste (4) on-power leak identification reduces generation of radioactive liquid waste.

Seebeck and Spin Seebeck effect in Gd-doped GaN thin films for Thermoelectric Devices and Applications

2011 ◽  
Vol 1329 ◽  
Author(s):  
Bahadir Kucukgok ◽  
Liqin Su ◽  
Elisa N. Hurwitz ◽  
Andrew Melton ◽  
Liu Zhiqiang ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Power ◽  
Room Temperature ◽  
Magnetic Semiconductors ◽  
Dilute Magnetic Semiconductors ◽  
Seebeck Effect ◽  
Ferromagnetic Behavior ◽  
Successful Development ◽  
Spintronic Devices ◽  
Spin Seebeck Effect

ABSTRACTGaN-based dilute magnetic semiconductors (DMS) have recently been investigated for use in spintronic devices. In particular, Gd-doped GaN has shown very promising room temperature ferromagnetic behavior and potential for use in spintronics applications. III-Nitride materials have recently had their thermoelectric properties investigated; however this work has not been extended to Nitride-based DMS. Understanding the spin-calorimetric characteristics of GaN-based DMS is important to the successful development of low-power spintronic devices. In this paper the Seebeck and spin-Seebeck effect in MOCVD grown Gd-doped GaN (Gd: GaN) are investigated.

Low-Power, Minimal-Heat Exposure Shape Memory Alloy (SMA) Actuators for On-Body Soft Robotics

2019 ◽  
Author(s):  
Simon Ozbek ◽  
Esther Foo ◽  
J. Walter Lee ◽  
Nicholas Schleif ◽  
Brad Holschuh
Keyword(s):  
Low Temperature ◽  
Shape Memory Alloy ◽  
Low Power ◽  
Shape Memory ◽  
Room Temperature ◽  
Dynamic Compression ◽  
Heat Exposure ◽  
The Body ◽  
Compression Garments ◽  
Sma Actuators

In the world of soft-robotic medical devices, there is a growing need for low profile, non-rigid, and lower power actuators for soft exoskeletons and dynamic compression garments. Advanced compression garments with integrated shape memory materials have been developed recently to alleviate the functional and usability limitations associated with traditional compression garments. These advanced garments use contractile shape memory alloy (SMA) coil actuators to produce dynamic compression on the body through selective heating of the SMA material. While these garments can create spatially- and temporally-controllable compression, typical SMA materials (e.g., 70°C Flexinol) consume considerable power and require considerable thermal insulation to protect the wearer during the heating phase of the SMA actuation. Alternative SMA materials (e.g., NiTi #8 by Fort Wayne Metals, Inc.) transform below room temperature and do so using no applied electrical power and generate no waste heat. However, these materials are challenging to dynamically control and require active refrigeration to reset to material. In theory, low-temperature SMA actuators made from materials like NiTi #8 may maintain additional dynamic actuation capacity once equilibrated to room temperature (i.e., the material may not fully transform), as the SMA phase transformation temperature window expands when the material experiences applied stress. This paper investigates this possibility: we manufactured and tested low-temperature NiTi coil actuators to determine the magnitude of the additional force that can be generated via Joule heating once the material has equilibrated to room temperature. SMA spring actuators made from NiTi #8 consumed 84% less power and stabilized at significantly lower temperatures (26.0°C vs. 41.2°C) than SMA springs made from 70°C Flexinol, when actuated at identically fixed displacements (100% nominal strain) and when driven to produce equal forces (∼3.35N). This demonstration of low-power, minimal-heat exposure SMA actuation holds promise for many future wearable actuation applications, including dynamic compression garments.

scholarly journals Design rules for scalability in spin-orbit electronics

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Mohammad Kazemi ◽  
Mark F. Bocko
Keyword(s):  
Heavy Metal ◽  
Power Consumption ◽  
Low Power ◽  
Topological Insulator ◽  
Room Temperature ◽  
Ferromagnetic Layer ◽  
Thermal Fluctuations ◽  
Low Power Consumption ◽  
Spin Orbit ◽  
Design Rules

Abstract Spin-orbit electronics (spin-orbitronics) has been widely discussed for enabling nonvolatile devices that store and process information with low power consumption. The potential of spin-orbitronics for memory and logic applications has been demonstrated by perpendicular anisotropy magnetic devices comprised of heavy-metal/ferromagnet or topological-insulator/ferromagnet bilayers, where the heavy metal or topological insulator provides an efficient source of spin current for manipulating information encoded in the bistable magnetization state of the ferromagnet. However, to reliably switch at room temperature, spin-orbit devices should be large to reduce thermal fluctuations, thereby compromising scalability, which in turn drastically increases power dissipation and degrades performance. Here, we show that the scalability is not a fundamental limitation in spin-orbitronics, and by investigating the interactions between the geometry of the ferromagnetic layer and components of the spin-orbit torque, we derive design rules that lead to deeply scalable spin-orbit devices. Furthermore, employing experimentally verified models, we propose deeply scaled spin-orbit devices exhibiting high-speed deterministic switching at room temperature. The proposed design principles are essential for design and implementation of very-large-scale-integration (VLSI) systems that provide high performance operation with low power consumption.

A Low‐Power CuSCN Hydrogen Sensor Operating Reversibly at Room Temperature

2021 ◽  
pp. 2102635
Author(s):  
Viktoras Kabitakis ◽  
Emmanouil Gagaoudakis ◽  
Marilena Moschogiannaki ◽  
George Kiriakidis ◽  
Akmaral Seitkhan ◽  
...  
Keyword(s):  
Low Power ◽  
Room Temperature ◽  
Hydrogen Sensor

Use of a diode laser to observe room‐temperature, low‐power optical bistability in a GaAs‐AlGaAs etalon

1984 ◽  
Vol 44 (4) ◽  
pp. 360-361 ◽  
Author(s):  
S. S. Tarng ◽  
H. M. Gibbs ◽  
J. L. Jewell ◽  
N. Peyghambarian ◽  
A. C. Gossard ◽  
...  
Keyword(s):  
Low Power ◽  
Diode Laser ◽  
Optical Bistability ◽  
Room Temperature
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