scholarly journals Large area nanoimprint enables ultra-precise x-ray diffraction gratings

2017 ◽  
Vol 25 (19) ◽  
pp. 23334 ◽  
Author(s):  
D. L. Voronov ◽  
E. M. Gullikson ◽  
H. A. Padmore
Keyword(s):  
Diffraction Gratings ◽  
X Ray Diffraction ◽  
Large Area ◽  
X Ray

X-ray diffraction gratings for synchrotron radiation spectroscopy: a new fabrication method

1982 ◽  
Vol 21 (15) ◽  
pp. 2787 ◽  
Author(s):  
Shinji Matsui ◽  
Kazuyuki Moriwaki ◽  
Hiroaki Aritome ◽  
Susumu Namba ◽  
Shik Shin ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Diffraction Gratings ◽  
Fabrication Method ◽  
X Ray Diffraction ◽  
X Ray

Large Area Supersonic Jet Epitaxy of AlN, GaN, and SiC on Silicon

1996 ◽  
Vol 449 ◽  
Author(s):  
L.J. Lauhon ◽  
S. A. Ustin ◽  
W. Ho
Keyword(s):  
Supersonic Jet ◽  
X Ray Diffraction ◽  
Large Area ◽  
Free Jets ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Supersonic Jet Epitaxy ◽  
Carrier Gases

ABSTRACTAlN, GaN, and SiC thin films were grown on 100 mm diameter Si(111) and Si(100) substrates using Supersonic Jet Epitaxy (SJE). Precursor gases were seeded in lighter mass carrier gases and free jets were formed using novel slit-jet apertures. The jet design, combined with substrate rotation, allowed for a uniform flux distribution over a large area of a 100 mm wafer at growth pressures of 1–20 mTorr. Triethylaluminum, triethylgailium, and ammonia were used for nitride growth, while disilane, acetylene, and methylsilane were used for SiC growth. The films were characterized by in situ optical reflectivity, x-ray diffraction (XRD), atomic force microscopy (AFM), and spectroscopic ellipsometry (SE).

Planar Techniques for Fabricating X-Ray Diffraction Gratings and Zone Plates

1984 ◽  
pp. 51-62 ◽  
Author(s):  
H. I. Smith ◽  
E. H. Anderson ◽  
A. M. Hawryluk ◽  
M. L. Schattenburg
Keyword(s):  
Diffraction Gratings ◽  
X Ray Diffraction ◽  
X Ray ◽  
Zone Plates

Multilayer-coated soft x-ray diffraction gratings for synchrotron radiation applications

1997 ◽  
Author(s):  
Ulf Kleineberg ◽  
Hans-Juergen Stock ◽  
D. Menke ◽  
O. Wehmeyer ◽  
Ulrich Heinzmann ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Diffraction Gratings ◽  
X Ray Diffraction ◽  
X Ray

The XFM beamline at the Australian Synchrotron

2020 ◽  
Vol 27 (5) ◽  
pp. 1447-1458 ◽  
Author(s):  
Daryl L. Howard ◽  
Martin D. de Jonge ◽  
Nader Afshar ◽  
Chris G. Ryan ◽  
Robin Kirkham ◽  
...  
Keyword(s):  
Materials Science ◽  
Energy Detection ◽  
Array Detector ◽  
X Rays ◽  
X Ray Diffraction ◽  
High Definition ◽  
Large Area ◽  
X Ray ◽  
Diffraction Microscopy ◽  
System Time

The X-ray fluorescence microscopy (XFM) beamline is an in-vacuum undulator-based X-ray fluorescence (XRF) microprobe beamline at the 3 GeV Australian Synchrotron. The beamline delivers hard X-rays in the 4–27 keV energy range, permitting K emission to Cd and L and M emission for all other heavier elements. With a practical low-energy detection cut-off of approximately 1.5 keV, low-Z detection is constrained to Si, with Al detectable under favourable circumstances. The beamline has two scanning stations: a Kirkpatrick–Baez mirror microprobe, which produces a focal spot of 2 µm × 2 µm FWHM, and a large-area scanning `milliprobe', which has the beam size defined by slits. Energy-dispersive detector systems include the Maia 384, Vortex-EM and Vortex-ME3 for XRF measurement, and the EIGER2 X 1 Mpixel array detector for scanning X-ray diffraction microscopy measurements. The beamline uses event-mode data acquisition that eliminates detector system time overheads, and motion control overheads are significantly reduced through the application of an efficient raster scanning algorithm. The minimal overheads, in conjunction with short dwell times per pixel, have allowed XFM to establish techniques such as full spectroscopic XANES fluorescence imaging, XRF tomography, fly scanning ptychography and high-definition XRF imaging over large areas. XFM provides diverse analysis capabilities in the fields of medicine, biology, geology, materials science and cultural heritage. This paper discusses the beamline status, scientific showcases and future upgrades.

scholarly journals Stress Gradient Analysis by Noncomplanar x-Ray Diffraction and Corresponding Refraction Correction

2014 ◽  
Vol 996 ◽  
pp. 162-168 ◽  
Author(s):  
Andrei Benediktovitch ◽  
Tatjana Ulyanenkova ◽  
Jozef Keckes ◽  
Alex Ulyanenkov
Keyword(s):  
Residual Stress ◽  
Gradient Analysis ◽  
Stress Gradient ◽  
X Ray Diffraction ◽  
Large Area ◽  
Present Contribution ◽  
Nondestructive Technique ◽  
X Ray ◽  
Tin Coatings ◽  
Measurement Geometry

X-ray residual stress analysis is a widespread nondestructive technique to investigate the residual stress and residual stress gradient in thin films and protective coatings.In the present contribution we introduce a new method based on the noncomplanar measurement geometry that allow to span large area of sin2ψ and penetration depth values without sample inclination. The refraction correction and absorption is considered in details for the noncomplanar measurements. The proposed technique is applied to determine stress gradients of blasted hard TiN coatings.

DynAMITe: a prototype large area CMOS APS for breast cancer diagnosis using x-ray diffraction measurements

2012 ◽  
Author(s):  
A. Konstantinidis ◽  
T. Anaxagoras ◽  
M. Esposito ◽  
N. Allinson ◽  
R. Speller
Keyword(s):  
Breast Cancer ◽  
Cancer Diagnosis ◽  
Breast Cancer Diagnosis ◽  
X Ray Diffraction ◽  
Large Area ◽  
X Ray

Preparation of CuIn(SxSe1–x)2 thin films with tunable band gap by controlling sulfurization temperature of CuInSe2

2010 ◽  
Vol 25 (12) ◽  
pp. 2426-2429 ◽  
Author(s):  
Guangjun Wang ◽  
Gang Cheng ◽  
Binbin Hu ◽  
Xiaoli Wang ◽  
Shaoming Wan ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Band Gap ◽  
Low Cost ◽  
Chalcopyrite Structure ◽  
X Ray Diffraction ◽  
Large Area ◽  
X Ray ◽  
Sulfurization Temperature ◽  
Tunable Band Gap

In this paper, polycrystalline CuIn(SxSe1–x)2 thin films with tunable x and Eg (band gap) values were prepared by controlling the sulfurization temperature (T) of CuInSe2 thin films. X-ray diffraction indicated the CuIn(SxSe1–x)2 films exhibited a homogeneous chalcopyrite structure. When T increases from 150 to 500 °C, x increases from 0 to 1, and Eg increases from 0.96 to 1.43 eV. The relations between x and Eg and the sulfurization process of CuIn(SxSe1–x)2 thin films have been discussed. This work provides an easy and low-cost technique for preparing large area absorber layers of solar cell with tunable Eg.

scholarly journals A large area CMOS detector for shutterless collection of x-ray diffraction data

2014 ◽  
Vol 493 ◽  
pp. 012019 ◽  
Author(s):  
A C Thompson ◽  
E M Westbrook ◽  
W M Lavender ◽  
J C Nix
Keyword(s):  
Diffraction Data ◽  
X Ray Diffraction ◽  
Large Area ◽  
X Ray
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