scholarly journals Single-photon avalanche diodes in 018-μm high-voltage CMOS technology

2017 ◽  
Vol 25 (12) ◽  
pp. 13333 ◽  
Author(s):  
L. D. Huang ◽  
J. Y. Wu ◽  
J. P. Wang ◽  
C. M. Tsai ◽  
Y. H. Huang ◽  
...  
Keyword(s):  
High Voltage ◽  
Single Photon ◽  
Cmos Technology ◽  
Avalanche Diodes ◽  
Single Photon Avalanche Diodes

scholarly journals Photon-Detection-Probability Simulation Method for CMOS Single-Photon Avalanche Diodes

Sensors ◽  
2020 ◽  
Vol 20 (2) ◽  
pp. 436 ◽  
Author(s):  
Chin-An Hsieh ◽  
Chia-Ming Tsai ◽  
Bing-Yue Tsui ◽  
Bo-Jen Hsiao ◽  
Sheng-Di Lin
Keyword(s):  
Detection Probability ◽  
Single Photon ◽  
Cmos Technology ◽  
Oxide Semiconductor ◽  
Cmos Process ◽  
Single Photons ◽  
Photon Detection ◽  
Important Indicator ◽  
Avalanche Diodes ◽  
Single Photon Avalanche Diodes

Single-photon avalanche diodes (SPADs) in complementary metal-oxide-semiconductor (CMOS) technology have excellent timing resolution and are capable to detect single photons. The most important indicator for its sensitivity, photon-detection probability (PDP), defines the probability of a successful detection for a single incident photon. To optimize PDP is a cost- and time-consuming task due to the complicated and expensive CMOS process. In this work, we have developed a simulation procedure to predict the PDP without any fitting parameter. With the given process parameters, our method combines the process, the electrical, and the optical simulations in commercially available software and the calculation of breakdown trigger probability. The simulation results have been compared with the experimental data conducted in an 800-nm CMOS technology and obtained a good consistence at the wavelength longer than 600 nm. The possible reasons for the disagreement at the short wavelength have been discussed. Our work provides an effective way to optimize the PDP of a SPAD prior to its fabrication.

Characterization of single photon avalanche diodes fabricated by 0.13μm CMOS technology

2013 ◽  
Author(s):  
Jiayu Guo ◽  
Chuyu Chen ◽  
Liang Feng ◽  
Xiaofeng Pu ◽  
Xiaoli Ji ◽  
...  
Keyword(s):  
Single Photon ◽  
Cmos Technology ◽  
Avalanche Diodes ◽  
Single Photon Avalanche Diodes

Crosstalk Between Single-Photon Avalanche Diodes in a 0.18-μm High-Voltage CMOS Process

2018 ◽  
Vol 36 (3) ◽  
pp. 833-837 ◽  
Author(s):  
Dai-Rong Wu ◽  
Chia-Ming Tsai ◽  
Yi-Hsiang Huang ◽  
Sheng-Di Lin
Keyword(s):  
High Voltage ◽  
Single Photon ◽  
Cmos Process ◽  
Avalanche Diodes ◽  
Single Photon Avalanche Diodes

Performance of high-voltage CMOS single-photon avalanche diodes with and without well-modulation technique

2020 ◽  
Vol 59 (04) ◽  
pp. 1 ◽  
Author(s):  
Michael Hofbauer ◽  
Bernhard Steindl ◽  
Kerstin Schneider-Hornstein ◽  
Horst Zimmermann
Keyword(s):  
High Voltage ◽  
Single Photon ◽  
Modulation Technique ◽  
Avalanche Diodes ◽  
Single Photon Avalanche Diodes
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