scholarly journals “W-shaped” injection current dependence of electroluminescence linewidth in green InGaN/GaN-based LED grown on silicon substrate

2017 ◽  
Vol 25 (20) ◽  
pp. A871 ◽  
Author(s):  
Jianfei Li ◽  
Changfu Li ◽  
Mingsheng Xu ◽  
Ziwu Ji ◽  
Kaiju Shi ◽  
...  
Keyword(s):  
Silicon Substrate ◽  
Injection Current ◽  
Current Dependence

Injection-Current Dependence of the Acoustoelectric Signal in AlGaAs/GaAs Heterostructures

2004 ◽  
Vol 33 (4) ◽  
pp. 236-240
Author(s):  
V. I. Egorkin ◽  
A. K. Morocha ◽  
S. S. Shmelev ◽  
V. V. Kapaev ◽  
I. P. Kazakov
Keyword(s):  
Injection Current ◽  
Current Dependence

InGaAs/Si Heterojunction Tunneling Field-Effect Transistor on Silicon Substrate

2014 ◽  
Vol E97.C (7) ◽  
pp. 677-682
Author(s):  
Sung YUN WOO ◽  
Young JUN YOON ◽  
Jae HWA SEO ◽  
Gwan MIN YOO ◽  
Seongjae CHO ◽  
...  
Keyword(s):  
Silicon Substrate ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor

Transport Properties Of Metallic Nanowires On Silicon Substrate

2014 ◽  
Vol 2 (1) ◽  
pp. 20-23
Author(s):  
Jaskiran Kaur ◽  
◽  
Surinder Singh ◽  
Keyword(s):  
Transport Properties ◽  
Silicon Substrate ◽  
Metallic Nanowires

Process Induced Defects in the Silicon Substrate: Approaches for Successful Failure Analysis

2010 ◽  
Author(s):  
J.G. van Hassel ◽  
Xiao-Mei Zhang
Keyword(s):  
Failure Analysis ◽  
Case Studies ◽  
Silicon Substrate ◽  
Processing Technique ◽  
Electrical Characteristics ◽  
Localization Method ◽  
The Right ◽  
Induced Defects

Abstract Failures induced in the silicon substrate by process marginalities or process mistakes need continuous attention in new as well as established technologies. Several case studies showing implant related defects and dislocations in silicon will be discussed. Depending on the electrical characteristics of the failure the localization method has to be chosen. The emphasis of the discussion will be on the importance of the right choice for further physical de-processing to reveal the defect. This paper focuses on the localization method, the de- processing technique and the use of Wright etch for subsequent TEM preparation.

Studies on a Novel Qualification Method of Silicon Nitride Layer

2016 ◽  
Author(s):  
Younan Hua ◽  
Bingsheng Khoo ◽  
Henry Leong ◽  
Yixin Chen ◽  
Eason Chan ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Silicon Substrate ◽  
Nitride Layer ◽  
Passivation Layer ◽  
Wafer Fabrication ◽  
Wafer Surface ◽  
Si3n4 Layer ◽  
Silicon Nitride Layer ◽  
Passivation Layers ◽  
Pinhole Test

Abstract In wafer fabrication, a silicon nitride (Si3N4) layer is widely used as passivation layer. To qualify the passivation layers, traditionally chemical recipe PAE (H3PO4+ HNO3) is used to conduct passivation pinhole test. However, it is very challenging for us to identify any pinholes in the Si3N4 layer with different layers underneath. For example, in this study, the wafer surface is Si3N4 layer and the underneath layer is silicon substrate. The traditional receipt of PAE cannot be used for passivation qualification. In this paper, we will report a new recipe using KOH solution to identify the pinhole in the Si3N4 passivation layer.

DNA Hybridization on Chitosan-Functionalized Silicon Substrate

2016 ◽  
Vol 12 (5) ◽  
pp. 464-471 ◽  
Author(s):  
Amina Omar ◽  
El-Sayed M. El-Sayed ◽  
Mona S. Talaat ◽  
Medhat Ibrahim
Keyword(s):  
Silicon Substrate ◽  
Dna Hybridization

Dependence on Extractive Industries in Lower-income Countries

2018 ◽  
Author(s):  
Alan Roe ◽  
Samantha Dodd
Keyword(s):  
Oil And Gas ◽  
Developing Economies ◽  
Commodity Price ◽  
Extractive Industries ◽  
Upward Trend ◽  
Middle Income ◽  
Current Dependence ◽  
Lower Income Countries ◽  
Development Prospects ◽  
Low And Middle Income

This chapter synthesizes statistical information evidencing the proposition that extractive industries are of great significance in many low- and middle-income developing economies, and so to their development prospects. It examines the scale of the current dependence of low- and middle-income economies on both types of extractive resources: metals, and oil and gas. The chapter also assesses how country levels of dependence have changed in the past twenty years, showing that there has been a clear upward trend based on exports. The chapter outlines how the upward trend has continued in many countries despite the recent commodity price collapse, and assesses some of the consequences of that collapse.

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