scholarly journals In situ annealing enhancement of the optical properties and laser device performance of InAs quantum dots grown on Si substrates

2016 ◽  
Vol 24 (6) ◽  
pp. 6196 ◽  
Author(s):  
Jonathan R. Orchard ◽  
Samuel Shutts ◽  
Angela Sobiesierski ◽  
Jiang Wu ◽  
Mingchu Tang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Device Performance ◽  
Laser Device ◽  
Inas Quantum Dots ◽  
Si Substrates

scholarly journals Optical properties of InAs quantum dots embedded in InGaAs/AlGaAs/GaAs structures with different capping layers

2021 ◽  
Vol 1723 (1) ◽  
pp. 012037
Author(s):  
R Cisneros-Tamayo ◽  
T Torchynska ◽  
J L Casas-Espinola ◽  
G Polupan ◽  
M Reséndiz-Chincoya
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Inas Quantum Dots

Site-controlled growth and luminescence of InAs quantum dots using in situ Ga-assisted deoxidation of patterned substrates

2008 ◽  
Vol 93 (10) ◽  
pp. 101908 ◽  
Author(s):  
P. Atkinson ◽  
S. Kiravittaya ◽  
M. Benyoucef ◽  
A. Rastelli ◽  
O. G. Schmidt
Keyword(s):  
Quantum Dots ◽  
Controlled Growth ◽  
Patterned Substrates ◽  
Inas Quantum Dots

Initial Stages of InAs Quantum Dots Evolution in GaAs/AlAs Matrixes

2002 ◽  
Vol 749 ◽  
Author(s):  
Michael Yakimov ◽  
Vadim Tokranov ◽  
Alex Katnelson ◽  
Serge Oktyabrsky
Keyword(s):  
Quantum Dots ◽  
Direct Evidence ◽  
Matrix Material ◽  
Single Layer ◽  
High Energy ◽  
Inas Quantum Dots ◽  
Auger Signal ◽  
The Matrix ◽  
Growth Evolution

ABSTRACTWe have studied the first phases of post-growth evolution of InAs quantum dots (QDs) using in-situ Auger electron spectroscopy in conjunction with Reflection High Energy Electron Diffraction (RHEED). Direct evidence for InAs intermixing with about 6ML (monolayers) of the matrix material is found from Auger signal behavior during MBE overgrowth of InAs nanostructures. Re-establishment of 2D growth mode by overgrowth with GaAs or AlAs was monitored in single-layer and multi-layer QD structures using RHEED. Decay process of InAs QDs on the surface is found to have activation energy of about 1.1 eV that corresponds to In intermixing with the matrix rather than evaporation from the surface.

Effect of Annealing on Optical Properties of InAs Quantum Dots Grown by MOCVD on GaAs (100) Vicinal Substrates

2005 ◽  
Vol 22 (10) ◽  
pp. 2692-2695 ◽  
Author(s):  
Liang Song ◽  
Zhu Hong-Liang ◽  
Pan Jiao-Qing ◽  
Zhao Ling-Juan ◽  
Wang Wei
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Inas Quantum Dots

Effects of Rapid Thermal Annealing on the Optical Properties of InAs Quantum Dots with Asymmetric InGaAs Layers

2009 ◽  
Vol 54 (4) ◽  
pp. 1655-1659 ◽  
Author(s):  
Do Yeob Kim ◽  
Min Su Kim ◽  
Tae Hoon Kim ◽  
Ghun Sik Kim ◽  
Hyun Young Choi ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Inas Quantum Dots

Influence of ZnTe separation layer thickness on optical properties in CdTe/ZnTe double quantum dots on Si substrates

2020 ◽  
Vol 699 ◽  
pp. 137893
Author(s):  
Kee Hong Lim ◽  
Minh Tan Man ◽  
Anh Thi Le ◽  
Jin Chul Choi ◽  
Hong Seok Lee
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Layer Thickness ◽  
Double Quantum ◽  
Si Substrates ◽  
Double Quantum Dots
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