scholarly journals Polarization characteristics of semipolar (112̄2) InGaN/GaN quantum well structures grown on relaxed InGaN buffer layers and comparison with experiment

2014 ◽  
Vol 22 (12) ◽  
pp. 14850 ◽  
Author(s):  
Seoung-Hwan Park ◽  
Dhaneshwar Mishra ◽  
Y. Eugene Pak ◽  
K. Kang ◽  
Chang Yong Park ◽  
...  
Keyword(s):  
Quantum Well ◽  
Buffer Layers ◽  
Quantum Well Structures ◽  
Comparison With Experiment ◽  
Polarization Characteristics

MBE Growth of III-V Nitride Films and Quantum-Well Structures Using Multiple RF Plasma Sources

1996 ◽  
Vol 449 ◽  
Author(s):  
M. A. L. Johnson ◽  
Zhonghai Yu ◽  
C. Boney ◽  
W. H. Rowland ◽  
W. C. Hughes ◽  
...  
Keyword(s):  
Quantum Well ◽  
Deep Level ◽  
Buffer Layers ◽  
Rf Plasma ◽  
Multiple Sources ◽  
Single Quantum Well ◽  
Active Nitrogen ◽  
Mbe Growth ◽  
Plasma Sources ◽  
Quantum Well Structures

ABSTRACTMBE growth of III-V nitrides is being studied at NCSU using MOVPE grown GaN buffer layers on SiC as substrates. Rf plasma sources are being used for the generation of active nitrogen during MBE deposition. Through the use of multiple rf plasma sources, sufficient active nitrogen is generated in order to examine the properties of III-V nitride layers grown at higher substrate temperatures and growth rates. The resulting MBE-grown GaN films exhibit remarkably intense photoluminescence (PL) dominated by a sharp band-edge peak at 3.409 eV having a FWHM of 36 meV at 300K. No deep level emission is observed. AlGaN and InGaN films and quantum well structures have also been prepared using multiple sources. A modulated beam MBE approach is used in conjunction with the multiple rf plasma sources to grow InGaN. RHEED and TEM studies reveal flat 2D InGaN quantum well structures. Depending on the indium content, GaN/InGaN single-quantum-well structures exhibit electroluminescence at 300K peaked in the blue-violet to the green spectral region.

Growth and Properties of III-V Nitride Films, Quantum Well Structures and Integrated Heterostructure Devices

1995 ◽  
Vol 395 ◽  
Author(s):  
J.F. Schetzina
Keyword(s):  
Optical Properties ◽  
Quantum Well ◽  
Light Emitting Diodes ◽  
Film Growth ◽  
Laser Diodes ◽  
Plasma Source ◽  
Nitrogen Plasma ◽  
Buffer Layers ◽  
Light Emitting ◽  
Quantum Well Structures

ABSTRACTGrowth of lll-V nitrides by molecular beam epitaxy (MBE) is being studied at NCSU using an rf nitrogen plasma source. GaN/SiC substrates consisting of ∼3 μm thick GaN buffer layers grown on 6H-SiC wafers by MOVPE at Cree Research, Inc. are being used as substrates in the MBE film growth experiments. The MBE-grown GaN films exhibit excellent structural and optical properties — comparable to the best GaN films grown by MOVPE—as determined from photoluminescence, x-ray diffraction, and vertical-cross-section TEM micrographs. Mg and Si have been used as dopants for p-type and n-type layers, respectively. AlxGa1−xN films (x∼0.06-0.08) and AlxGa1−xN/GaN multi-quantum-well structures have been grown which display good optical properties. Light-emitting diodes (LEDs) based on double-heterostructures of AlxGa1−xN/GaN which emit violet light at ∼400 nm have also been demonstrated. Key issues that must be addressed before lll-V nitride laser diodes can be demonstrated and commercialized are discussed. New integrated heterostructures are proposed for the development of a variety of vertical-transport devices such as light-emitting diodes, laser diodes, photocathodes, electron emitters based on the negative-electron-affinity of AIN, and certain transistor structures.

scholarly journals Optical properties of InGaNAs/GaAs quantum well structures with GaNAs strain relief buffer layers

2008 ◽  
Vol 69 (2-3) ◽  
pp. 493-496 ◽  
Author(s):  
Cheng-Yuan Chen ◽  
Jia-Ren Lee ◽  
Chien-Rong Lu ◽  
Hsiang-Lin Liu ◽  
Li-Wen Sun ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Well ◽  
Buffer Layers ◽  
Strain Relief ◽  
Quantum Well Structures
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