scholarly journals Optical properties of InGaNAs/GaAs quantum well structures with GaNAs strain relief buffer layers

2008 ◽  
Vol 69 (2-3) ◽  
pp. 493-496 ◽  
Author(s):  
Cheng-Yuan Chen ◽  
Jia-Ren Lee ◽  
Chien-Rong Lu ◽  
Hsiang-Lin Liu ◽  
Li-Wen Sun ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Well ◽  
Buffer Layers ◽  
Strain Relief ◽  
Quantum Well Structures

Growth and Properties of III-V Nitride Films, Quantum Well Structures and Integrated Heterostructure Devices

1995 ◽  
Vol 395 ◽  
Author(s):  
J.F. Schetzina
Keyword(s):  
Optical Properties ◽  
Quantum Well ◽  
Light Emitting Diodes ◽  
Film Growth ◽  
Laser Diodes ◽  
Plasma Source ◽  
Nitrogen Plasma ◽  
Buffer Layers ◽  
Light Emitting ◽  
Quantum Well Structures

ABSTRACTGrowth of lll-V nitrides by molecular beam epitaxy (MBE) is being studied at NCSU using an rf nitrogen plasma source. GaN/SiC substrates consisting of ∼3 μm thick GaN buffer layers grown on 6H-SiC wafers by MOVPE at Cree Research, Inc. are being used as substrates in the MBE film growth experiments. The MBE-grown GaN films exhibit excellent structural and optical properties — comparable to the best GaN films grown by MOVPE—as determined from photoluminescence, x-ray diffraction, and vertical-cross-section TEM micrographs. Mg and Si have been used as dopants for p-type and n-type layers, respectively. AlxGa1−xN films (x∼0.06-0.08) and AlxGa1−xN/GaN multi-quantum-well structures have been grown which display good optical properties. Light-emitting diodes (LEDs) based on double-heterostructures of AlxGa1−xN/GaN which emit violet light at ∼400 nm have also been demonstrated. Key issues that must be addressed before lll-V nitride laser diodes can be demonstrated and commercialized are discussed. New integrated heterostructures are proposed for the development of a variety of vertical-transport devices such as light-emitting diodes, laser diodes, photocathodes, electron emitters based on the negative-electron-affinity of AIN, and certain transistor structures.

Optical properties of GaBiAs single quantum well structures grown by MBE

2015 ◽  
Vol 30 (9) ◽  
pp. 094016 ◽  
Author(s):  
O Donmez ◽  
A Erol ◽  
M C Arikan ◽  
H Makhloufi ◽  
A Arnoult ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Well ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Structures

Optical properties of highly excited ZnSe/ZnSxSe1-xmultiple-quantum-well structures

1992 ◽  
Vol 7 (5) ◽  
pp. 681-685 ◽  
Author(s):  
M Dabbicco ◽  
M Lepore ◽  
R Cingolani ◽  
G Scamarcio ◽  
M Ferrara ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Well ◽  
Quantum Well Structures

Electrical and optical properties of convex-type metamorphic In0.75Ga0.25As/In0.7Al0.3As quantum well structures grown by MBE on GaAs

2017 ◽  
Vol 4 (10) ◽  
pp. 105902
Author(s):  
T A Komissarova ◽  
M Yu Chernov ◽  
V A Solov’ev ◽  
B Ya Meltser ◽  
P N Brunkov ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Well ◽  
Electrical And Optical Properties ◽  
Quantum Well Structures

Optical properties of CdTe-Cd0.90Mn0.10Te multiple quantum well structures grown by pulsed laser evaporation and epitaxy

1992 ◽  
Vol 117 (1-4) ◽  
pp. 862-866 ◽  
Author(s):  
J.J. Dubowski ◽  
A.P. Roth ◽  
E. Deleporte ◽  
G. Peter ◽  
Z.C. Feng ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Well ◽  
Multiple Quantum Well ◽  
Pulsed Laser ◽  
Laser Evaporation ◽  
Multiple Quantum ◽  
Quantum Well Structures
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