Publisher’s Note: “Performance enhancement of blue light-emitting diodes with AlGaN barriers and a special designed electron-blocking layer” [J. Appl. Phys. 110, 093104 (2011)]

2012 ◽  
Vol 112 (2) ◽  
pp. 029905 ◽  
Author(s):  
Yun-Yan Zhang ◽  
Guang-Rui Yao
2020 ◽  
Vol 1014 ◽  
pp. 126-130
Author(s):  
Wan Sheng Zuo ◽  
Yin Xi Niu ◽  
Liu Yang ◽  
Xiu Zhen Chi ◽  
Jin Jin Liu ◽  
...  

In this study, the advantages of the AlN electron blocking layer (EBL) for InGaN/GaN blue light-emitting diodes (LEDs) were investigated. The LEDs with the AlN EBL exhibited better optical performance over a wide range of carrier concentration due to the suppression of electron overflow. Furthermore, the AlN EBL with a thicker last barrier layer was investigated. The thicker last barrier layer was used to enhance Electrostatic Discharge (ESD) characteristic by the better current spreading effect.


2013 ◽  
Vol 22 (5) ◽  
pp. 058503 ◽  
Author(s):  
Fang Zhao ◽  
Guang-Rui Yao ◽  
Jing-Jing Song ◽  
Bin-Bin Ding ◽  
Jian-Yong Xiong ◽  
...  

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