scholarly journals Modulation of the propagation speed of mechanical waves in silicon quantum dots embedded in a silicon-nitride film

2012 ◽  
Vol 20 (4) ◽  
pp. 4784 ◽  
Author(s):  
C. Torres-Torres ◽  
A. López-Suárez ◽  
R. Torres-Martínez ◽  
A. Rodriguez ◽  
J. A. Reyes-Esqueda ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Silicon Nitride ◽  
Propagation Speed ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Silicon Quantum Dots ◽  
Mechanical Waves

Effect of hydrogen passivation on charge storage in silicon quantum dots embedded in silicon nitride film

2005 ◽  
Vol 86 (14) ◽  
pp. 143107 ◽  
Author(s):  
Chang-Hee Cho ◽  
Baek-Hyun Kim ◽  
Tae-Wook Kim ◽  
Seong-Ju Park ◽  
Nae-Man Park ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Silicon Nitride ◽  
Nitride Film ◽  
Charge Storage ◽  
Silicon Nitride Film ◽  
Hydrogen Passivation ◽  
Silicon Quantum Dots

Characteristics and Charge Storage of Silicon Quantum Dots Embedded in Silicon Nitride Film

2015 ◽  
Vol 44 (3) ◽  
pp. 1015-1020 ◽  
Author(s):  
Wugang Liao ◽  
Xiangbin Zeng ◽  
Xixing Wen ◽  
Wenjun Zheng ◽  
Yangyang Wen ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Silicon Nitride ◽  
Nitride Film ◽  
Charge Storage ◽  
Silicon Nitride Film ◽  
Silicon Quantum Dots

Full Color Luminescence from Amorphous Silicon Quantum Dots Embedded in Silion Nitride

2000 ◽  
Vol 638 ◽  
Author(s):  
Nae-Man Park ◽  
Tae-Soo Kim ◽  
Chel-Jong Choi ◽  
Tae-Yeon Seong ◽  
Seong-Ju Park
Keyword(s):  
Quantum Dots ◽  
Amorphous Silicon ◽  
Quantum Confinement Effect ◽  
Chemical Vapor ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Silicon Quantum Dots ◽  
Light Emitting ◽  
Full Color ◽  
Mean Size

AbstractAmorphous silicon quantum dots (a-Si QDs), which show a quantum confinement effect, were grown in a silion nitride film by plasma enhanced chemical vapor deposition. Red, green, blue, and white photolumiscence were observed from the a-Si QD strictures by controlling the fot size. An organe light-emitting device (LED) was fabricated using a-Si QDs with a mean size of 2.0 nm. The turn-on vottage was less than 5 V. An external quantum effiency of 2×10−3 % was also demonstrated. These results show that an LED using a-Si QDs embedded in the silicon nitride film is superior in terms of electrical and optical properties to other Si-based LEDs.

Microbridge Testing of Thin Films Under Small Deformation

1999 ◽  
Vol 594 ◽  
Author(s):  
T. Y. Zhang ◽  
Y. J. Su ◽  
C. F. Qian ◽  
M. H. Zhao ◽  
L. Q. Chen
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Silicon Nitride ◽  
Young’S Modulus ◽  
Young's Modulus ◽  
Chemical Vapor ◽  
Small Deformation ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Pressure Chemical

AbstractThe present work proposes a novel microbridge testing method to simultaneously evaluate the Young's modulus, residual stress of thin films under small deformation. Theoretic analysis and finite element calculation are conducted on microbridge deformation to provide a closed formula of deflection versus load, considering both substrate deformation and residual stress in the film. Silicon nitride films fabricated by low pressure chemical vapor deposition on silicon substrates are tested to demonstrate the proposed method. The results show that the Young's modulus and residual stress for the annealed silicon nitride film are respectively 202 GPa and 334.9 MPa.

Annealing and excitation dependent photoluminescence of silicon rich silicon nitride films with silicon quantum dots

Vacuum ◽  
2015 ◽  
Vol 121 ◽  
pp. 147-151 ◽  
Author(s):  
Wugang Liao ◽  
Xiangbin Zeng ◽  
Xixing Wen ◽  
Xiaoxiao Chen ◽  
Wenzhao Wang
Keyword(s):  
Quantum Dots ◽  
Silicon Nitride ◽  
Silicon Quantum Dots ◽  
Silicon Nitride Films
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