scholarly journals Room-temperature low-threshold current-injection InGaAs quantum-dot microdisk lasers with single-mode emission

2011 ◽  
Vol 19 (15) ◽  
pp. 14145 ◽  
Author(s):  
Ming-Hua Mao ◽  
Hao-Che Chien ◽  
Jay-Zway Hong ◽  
Chih-Yi Cheng
2009 ◽  
Vol 17 (7) ◽  
pp. 5439 ◽  
Author(s):  
Frédéric Bordas ◽  
Christian Seassal ◽  
Emmanuel Dupuy ◽  
Philippe Regreny ◽  
Michel Gendry ◽  
...  

2006 ◽  
Author(s):  
Abdelmajid Salhi ◽  
Vittorianna Tasco ◽  
Luigi Martiradonna ◽  
Giuseppe Visimberga ◽  
Laura Fortunato ◽  
...  

2004 ◽  
Vol 03 (01n02) ◽  
pp. 187-192
Author(s):  
G. LIN ◽  
I. F. CHEN ◽  
F. J. LAY ◽  
J. Y. CHI ◽  
D. A. LIVSHITS ◽  
...  

We have investigated light-current and spectral characteristics of 2-, 5- and 10-stack InAs / InGaAs / GaAs quantum dot (QD) ridge-waveguide lasers grown by MBE. Ultra-low threshold current of 1.43 mA was achieved for 2-stack QD laser. Simultaneous lasing at ground- and excited-states was observed. This effect is accounted for the finite time of carriers capture to the ground-state in QDs. Multi-stack QD structures enables to maintain continuous-wave (CW) ground-state lasing up to the current density of 100×Jth and to achieve the highest output power and efficiency ever recorded for any single-mode lasers of 1.3-μm-wavelength range.


Author(s):  
Shu-man Liu ◽  
Masahiro Yoshita ◽  
Makoto Okano ◽  
Toshiyuki Ihara ◽  
Hirotake Itoh ◽  
...  

2007 ◽  
Vol 46 (No. 14) ◽  
pp. L330-L332 ◽  
Author(s):  
Shu-man Liu ◽  
Masahiro Yoshita ◽  
Makoto Okano ◽  
Toshiyuki Ihara ◽  
Hirotake Itoh ◽  
...  

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