scholarly journals Silicon-on-insulator polarization splitting and rotating device for polarization diversity circuits

2011 ◽  
Vol 19 (13) ◽  
pp. 12646 ◽  
Author(s):  
Liu Liu ◽  
Yunhong Ding ◽  
Kresten Yvind ◽  
Jørn M. Hvam
Keyword(s):  
Silicon On Insulator ◽  
Polarization Diversity ◽  
Polarization Splitting

scholarly journals Design and Optimization of Polarization Splitting and Rotating Devices in Silicon-on-Insulator Technology

2014 ◽  
Vol 2014 ◽  
pp. 1-16 ◽  
Author(s):  
Benedetto Troia ◽  
Francesco De Leonardis ◽  
Mauro Lanzafame ◽  
Tommaso Muciaccia ◽  
Giuseppe Grasso ◽  
...  
Keyword(s):  
Photonic Devices ◽  
Silicon On Insulator ◽  
Design Criteria ◽  
Device Performance ◽  
Polarization Diversity ◽  
Technology Platform ◽  
Design And Optimization ◽  
Fabrication Tolerances ◽  
Silicon On Insulator Technology ◽  
Polarization Splitting

We review polarization splitting and rotating photonic devices based on silicon-on-insulator technology platform, focusing on their performance and design criteria. In addition, we present a theoretical investigation and optimization of some rotator and splitter architectures to be employed for polarization diversity circuits. In this context, fabrication tolerances and their influences on device performance are theoretically estimated by rigorous simulations too.

scholarly journals Focusing Polarization Diversity Grating Couplers in Silicon-on-Insulator

2009 ◽  
Vol 27 (5) ◽  
pp. 612-618 ◽  
Author(s):  
Frederik Van Laere ◽  
Wim Bogaerts ◽  
Pieter Dumon ◽  
GÜnther Roelkens ◽  
Dries Van Thourhout ◽  
...  
Keyword(s):  
Silicon On Insulator ◽  
Polarization Diversity ◽  
Grating Couplers

scholarly journals A silicon-on-insulator polarization diversity scheme in the mid-infrared

2015 ◽  
Vol 23 (11) ◽  
pp. 15029 ◽  
Author(s):  
Jing Wang ◽  
Chunghun Lee ◽  
Ben Niu ◽  
Haiyang Huang ◽  
You Li ◽  
...  
Keyword(s):  
Silicon On Insulator ◽  
Polarization Diversity ◽  
Mid Infrared ◽  
Diversity Scheme

scholarly journals Polarization Splitter-Rotator Based on Multimode Waveguide Grating

Crystals ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 1170
Author(s):  
Yannong Luo ◽  
Renyou Ge ◽  
Haozhi Luo ◽  
Meiyan Wu ◽  
Lidan Zhou ◽  
...  
Keyword(s):  
Insertion Loss ◽  
Extinction Ratio ◽  
Silicon On Insulator ◽  
Multimode Waveguide ◽  
Polarization Conversion ◽  
Polarization Diversity ◽  
Polarization Splitter ◽  
Waveguide Grating ◽  
Design Flexibility ◽  
Bloch Mode

We demonstrate a polarization splitter rotator (PSR) based on multimode waveguide grating (MWG) on a silicon-on-insulator (SOI) platform. Bloch mode hybridization in mini-stopband is exploited to achieve high polarization conversion efficiency. The fabricated device yields a high extinction ratio of > 53 dB and > 31 dB, low crosstalk of < −26.4 dB and < −40 dB for the injected TE0 and TM0 mode, with average insertion loss of 1.2 dB and 1.5 dB in the wavelength regime 1552 nm–1562 nm. Such a device shows great design flexibility and an easy fabrication process, serving as a good candidate in integrated polarization diversity circuits, especially for applications requiring spectra manipulation. Additionally, the polarization conversion approach provides opportunities to develop novel polarization management devices.

scholarly journals Polarization diversity DPSK demodulator on the silicon-on-insulator platform with simple fabrication

2013 ◽  
Vol 21 (6) ◽  
pp. 7828 ◽  
Author(s):  
Yunhong Ding ◽  
Bo Huang ◽  
Haiyan Ou ◽  
Francesco Da Ros ◽  
Christophe Peucheret
Keyword(s):  
Silicon On Insulator ◽  
Polarization Diversity

scholarly journals A polarization-diversity wavelength duplexer circuit in silicon-on-insulator photonic wires

2007 ◽  
Vol 15 (4) ◽  
pp. 1567 ◽  
Author(s):  
Wim Bogaerts ◽  
Dirk Taillaert ◽  
Pieter Dumon ◽  
Dries Van Thourhout ◽  
Roel Baets ◽  
...  
Keyword(s):  
Silicon On Insulator ◽  
Polarization Diversity ◽  
Photonic Wires

Focusing polarization diversity gratings for Silicon-on-Insulator integrated circuits

2008 ◽  
Author(s):  
Frederik Van Laere ◽  
Wim Bogaerts ◽  
Pieter Dumon ◽  
Gunther Roelkens ◽  
Dries Van Thourhout ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Silicon On Insulator ◽  
Polarization Diversity

Structural changes in silicon-on-insulator material during post-implantation annealing

1986 ◽  
Vol 44 ◽  
pp. 736-737
Author(s):  
C. O. Jung ◽  
S. J. Krause ◽  
S.R. Wilson
Keyword(s):  
Integrated Circuits ◽  
Oxide Layer ◽  
High Speed ◽  
Structural Changes ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Quality ◽  
Radiation Hardened ◽  
Post Implantation ◽  
Very High

Silicon-on-insulator (SOI) structures have excellent potential for future use in radiation hardened and high speed integrated circuits. For device fabrication in SOI material a high quality superficial Si layer above a buried oxide layer is required. Recently, Celler et al. reported that post-implantation annealing of oxygen implanted SOI at very high temperatures would eliminate virtually all defects and precipiates in the superficial Si layer. In this work we are reporting on the effect of three different post implantation annealing cycles on the structure of oxygen implanted SOI samples which were implanted under the same conditions.

In Situ microscopy of the anodic etching of silicon

1995 ◽  
Vol 53 ◽  
pp. 232-233
Author(s):  
Frances M. Ross ◽  
Peter C. Searson
Keyword(s):  
Composite Structures ◽  
High Surface ◽  
High Surface Area ◽  
Chemical Properties ◽  
Selective Etching ◽  
Silicon On Insulator ◽  
Second Phase ◽  
Porous Layers ◽  
New Class ◽  
Porous Semiconductors

Porous semiconductors represent a relatively new class of materials formed by the selective etching of a single or polycrystalline substrate. Although porous silicon has received considerable attention due to its novel optical properties1, porous layers can be formed in other semiconductors such as GaAs and GaP. These materials are characterised by very high surface area and by electrical, optical and chemical properties that may differ considerably from bulk. The properties depend on the pore morphology, which can be controlled by adjusting the processing conditions and the dopant concentration. A number of novel structures can be fabricated using selective etching. For example, self-supporting membranes can be made by growing pores through a wafer, films with modulated pore structure can be fabricated by varying the applied potential during growth, composite structures can be prepared by depositing a second phase into the pores and silicon-on-insulator structures can be formed by oxidising a buried porous layer. In all these applications the ability to grow nanostructures controllably is critical.

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