scholarly journals Ultrashort free-carrier lifetime in low-loss silicon nanowaveguides

2010 ◽  
Vol 18 (4) ◽  
pp. 3582 ◽  
Author(s):  
Amy C. Turner-Foster ◽  
Mark A. Foster ◽  
Jacob S. Levy ◽  
Carl B. Poitras ◽  
Reza Salem ◽  
...  
Keyword(s):  
Carrier Lifetime ◽  
Free Carrier ◽  
Low Loss

scholarly journals Ultralong free-standing single crystal perovskite microwires with extremely low dark current

2021 ◽  
Author(s):  
Xiangshun Geng ◽  
Qi-Xin Feng ◽  
He Tian ◽  
Weijian Chen ◽  
Xiaoming Wen ◽  
...  
Keyword(s):  
Single Crystal ◽  
Dark Current ◽  
Near Infrared ◽  
Carrier Lifetime ◽  
Low Loss ◽  
Free Standing ◽  
Monoclinic Crystal ◽  
Monoclinic Crystal Structure ◽  
Integrated Optical ◽  
Integrated Optical Waveguide

Abstract Super long perovskite microwires (PMWs) are in a great demand in many fields such as low-loss microcables and integrated optical waveguide. Despite decades of research into PMWs, single crystal PMWs with several centimeters long have not been obtained. Here, ultralong (up to 7.6 centimeters) monoclinic crystal structure CH3NH3PbI3·DMF PMWs have been synthesized. The high-quality microwire exhibits long carrier lifetime of 1775.7 ns. The as-prepared free-standing PMWs can be integrated to any arbitrary substrate and 808 nm near-infrared photodetectors have been successfully demonstrated. The fabricated device shows a high light on/off ratio of 1.79×106 and an extremely low dark current of 2.5 fA at 1 V bias. This work provides a strategy for the solution growth of ultralong microwires.

Contactless Spatially Resolved Measurement of Bulk Free-Carrier Lifetime in Silicon Ingots

1986 ◽  
Vol 69 ◽  
Author(s):  
S. M. Johnson ◽  
L. G. Johnson ◽  
R. Hemphill
Keyword(s):  
Spatial Dependence ◽  
Polycrystalline Silicon ◽  
Carrier Lifetime ◽  
Transient Absorption ◽  
Free Carrier ◽  
Large Area ◽  
Spatially Resolved ◽  
Probe Transmission ◽  
Transmission Measurements ◽  
Absorption Measurements

AbstractA contactless spatially resolved measurement of bulk free-carrier lifetime in polycrystalline silicon ingots was accomplished using optically modulated free-carrier infrared absorption. Using a CW Nd:YAG laser (λ = 1.319 μm) for a probe and novel pulsed, tunable, infrared dye laser (λ = 1.10 to 1.13 μm) with photon energies near the Si bandgap, for a pump, the free-carrier lifetime was determined from transient absorption measurements to a maximum depth of 3.0 cm from the surface of an ingot. The spatial dependence of the free-carrier lifetime and the distribution of precipitates (determined from infrared probe transmission measurements) measured along the growth axis of an ingot were found to be strongly related to the spatial dependence of the I–V characteristics of large area solar cells fabricated from the subsequently wafered ingot.

Ultrafast nonlinear optical processes and free-carrier lifetime in silicon nanowaveguides

2011 ◽  
Author(s):  
Ali R. Motamedi ◽  
Amir H. Nejadmalayeri ◽  
Anatol Khilo ◽  
Franz X. Kärtner ◽  
Erich P. Ippen
Keyword(s):  
Nonlinear Optical ◽  
Carrier Lifetime ◽  
Free Carrier

Effects of annealing silicon ion irradiated rib waveguides with respect to free carrier lifetime

2010 ◽  
Author(s):  
Nicholas M. Wright ◽  
Andrew J. Smith ◽  
Konstantin Litvinenko ◽  
Russell Gwilliam ◽  
Goran Mashanovich ◽  
...  
Keyword(s):  
Carrier Lifetime ◽  
Free Carrier ◽  
Rib Waveguides

Free carrier lifetime in high resistivity aluminium antimonide

1967 ◽  
Vol 5 (5) ◽  
pp. 395-397 ◽  
Author(s):  
Norma G. Blamires ◽  
P.E. Gibbons
Keyword(s):  
Carrier Lifetime ◽  
Free Carrier ◽  
High Resistivity
Sign in / Sign up

Export Citation Format

Share Document