Effect of geometry and reverse bias on free carrier lifetime in p-i-n structured optical rib waveguide

2013 ◽  
Author(s):  
Mrinal Sen ◽  
Tanmoy Datta ◽  
Mukul K. Das
Keyword(s):  
Reverse Bias ◽  
Carrier Lifetime ◽  
Free Carrier ◽  
Rib Waveguide

Scanned Electron Beam Annealing of Boron-Implanted Diodes

1980 ◽  
Vol 1 ◽  
Author(s):  
T. O. Yep ◽  
R. T. Fulks ◽  
R. A. Powell
Keyword(s):  
Electron Beam ◽  
Ion Implantation ◽  
Reverse Bias ◽  
Carrier Lifetime ◽  
Reverse Current ◽  
Electrical Activation ◽  
Electrical Characteristics ◽  
Low Resolution ◽  
Implantation Damage ◽  
Dopant Redistribution

ABSTRACTSuccessful annealing of p+ n arrays fabricated by ion-implantation of 11B (50 keV, 1 × 1014 cm-2) into Si (100 has been performed using a broadly rastered, low-resolution (0.25-inch diameter) electron beam. A complete 2" wafer could be uniformly annealed in ≃20 sec with high electrical activation (>75%) and small dopant redistribution (≃450 Å). Annealing resulted In p+n junctions characterized by low reverse current (≃4 nAcm-2 at 5V reverse bias) and higher carrier lifetime (80 μsec) over the entire 2" wafer. Based on the electrical characteristics of the diodes, we estimate that the electron beam anneal was able to remove ion implantation damage and leave an ordered substrate to a depth of 5.5 m below the layer junction.

Contactless Spatially Resolved Measurement of Bulk Free-Carrier Lifetime in Silicon Ingots

1986 ◽  
Vol 69 ◽  
Author(s):  
S. M. Johnson ◽  
L. G. Johnson ◽  
R. Hemphill
Keyword(s):  
Spatial Dependence ◽  
Polycrystalline Silicon ◽  
Carrier Lifetime ◽  
Transient Absorption ◽  
Free Carrier ◽  
Large Area ◽  
Spatially Resolved ◽  
Probe Transmission ◽  
Transmission Measurements ◽  
Absorption Measurements

AbstractA contactless spatially resolved measurement of bulk free-carrier lifetime in polycrystalline silicon ingots was accomplished using optically modulated free-carrier infrared absorption. Using a CW Nd:YAG laser (λ = 1.319 μm) for a probe and novel pulsed, tunable, infrared dye laser (λ = 1.10 to 1.13 μm) with photon energies near the Si bandgap, for a pump, the free-carrier lifetime was determined from transient absorption measurements to a maximum depth of 3.0 cm from the surface of an ingot. The spatial dependence of the free-carrier lifetime and the distribution of precipitates (determined from infrared probe transmission measurements) measured along the growth axis of an ingot were found to be strongly related to the spatial dependence of the I–V characteristics of large area solar cells fabricated from the subsequently wafered ingot.

Performance of the Active Microring Resonator Based on SOI Rib Waveguide

2012 ◽  
Vol 462 ◽  
pp. 375-379
Author(s):  
B. Mardiana ◽  
A.R. Hanim ◽  
H. Hazura ◽  
S. Shaari ◽  
P. Susthitha Menon ◽  
...  
Keyword(s):  
Refractive Index ◽  
Ring Resonator ◽  
Refractive Index Change ◽  
Electrical Signal ◽  
Free Carrier ◽  
Simulation Software ◽  
Microring Resonator ◽  
Silicon On Insulator ◽  
Carrier Injection ◽  
Rib Waveguide

Micro-ring resonator based on silicon-on-insulator (SOI) has been extensively studied due to its many advantages, thus promising to improve the optoelectronic integrated circuit performance. This paper highlights the study of the free carrier injection effect on the silicon rib waveguide with p-i-n diode structure integrated in the SOI micro-ring resonator. The free carrier concentrations have been modulated by the electrical signal that can cause change of refractive index of the micro-ring resonator. The device performances are predicted by using numerical modelling software 2D SILVACO and Finite Difference Time Domain method simulation software RSOFT. The results show the change of refractive index is maximized at a greater applied voltage. A shift in resonant wavelength of around 6.7 nm was predicted at 0.9V with 1.14x10-3refractive index change. It is also shown that 8.5dB change of the output response obtained through the output.

Ultrafast nonlinear optical processes and free-carrier lifetime in silicon nanowaveguides

2011 ◽  
Author(s):  
Ali R. Motamedi ◽  
Amir H. Nejadmalayeri ◽  
Anatol Khilo ◽  
Franz X. Kärtner ◽  
Erich P. Ippen
Keyword(s):  
Nonlinear Optical ◽  
Carrier Lifetime ◽  
Free Carrier

Effects of annealing silicon ion irradiated rib waveguides with respect to free carrier lifetime

2010 ◽  
Author(s):  
Nicholas M. Wright ◽  
Andrew J. Smith ◽  
Konstantin Litvinenko ◽  
Russell Gwilliam ◽  
Goran Mashanovich ◽  
...  
Keyword(s):  
Carrier Lifetime ◽  
Free Carrier ◽  
Rib Waveguides

Free carrier lifetime in high resistivity aluminium antimonide

1967 ◽  
Vol 5 (5) ◽  
pp. 395-397 ◽  
Author(s):  
Norma G. Blamires ◽  
P.E. Gibbons
Keyword(s):  
Carrier Lifetime ◽  
Free Carrier ◽  
High Resistivity
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