scholarly journals Geometry-dependent two-photon absorption followed by free-carrier absorption in AlGaAs waveguides

2021 ◽  
Author(s):  
Daniel Espinosa ◽  
Stephen Harrigan ◽  
Kashif Awan ◽  
Payman Rasekh ◽  
Ksenia Dolgaleva
Keyword(s):  
Free Carrier ◽  
Photon Absorption ◽  
Free Carrier Absorption ◽  
Two Photon Absorption ◽  
Two Photon ◽  
Carrier Absorption

Nonlinear Laser Melting Of Indium Antimonide And Silicon

1983 ◽  
Vol 13 ◽  
Author(s):  
Michael P. Hasselbeck ◽  
H. S. Kwok
Keyword(s):  
Indium Antimonide ◽  
Laser Light ◽  
Free Carrier ◽  
Photon Absorption ◽  
Free Carrier Absorption ◽  
Two Photon Absorption ◽  
Free Carriers ◽  
Two Photon ◽  
Avalanche Ionization ◽  
Carrier Absorption

ABSTRACTPulsed 10.6μm TEA CO2 laser light has been used to melt the semiconductors silicon and InSb. Measurements indicate that generation of free carriers necessary for melting may take place by nonlinear processes such as two-photon absorption or intraband avalanche ionization. If the semiconductor is sufficiently doped, melting may also result from linear free carrier absorption. In all cases, it appears that the molten depth exceeds several μm, which is much greater than obtained with lasers of shorter wavelength.

The Role of Free Carrier Absorption in LADA

2014 ◽  
Author(s):  
Kent Erington ◽  
Dan Bodoh ◽  
Kris Dickson ◽  
George Lange
Keyword(s):  
Integrated Circuit ◽  
Continuous Wave ◽  
Free Carrier ◽  
Photon Absorption ◽  
Free Carrier Absorption ◽  
Two Photon Absorption ◽  
Two Photon ◽  
Electron Hole Pair ◽  
Carrier Absorption

Abstract Laser-assisted device alteration (LADA) is an established technique used to identify critical speed paths in integrated circuit. In this paper, the characterization of continuous wave 1340nm laser induced currents and the LADA failure rate show that a two photon absorption explanation for the LADA effect is not plausible. The following sections confirm the results of a 28nm-node nMOS transistor using a 2.45NA solid immersion lens. The effects of global heating to that of local laser heating are then compared. The paper shows that the LADA response time to approximately 1300nm irradiation is << 100ns. It explains LADA at approximately 1300nm, free carrier absorption in the silicon and in the local silicide layers, and presents selected 1320nm LADA images on 28nm-node devices. Finally, it shows 1064nm LADA images on the same structure that indicate that 1064nm interaction with transistors is related to free carrier absorption, rather than electron-hole pair creation.

TUNABLE ASYMMETRIC FANO LINESHAPES IN SILICON-BASED MICRORING RESONATORS WITH FEEDBACK

2011 ◽  
Vol 20 (03) ◽  
pp. 357-366 ◽  
Author(s):  
SANTHAD PITAKWONGSAPORN ◽  
SURASAK CHIANGGA
Keyword(s):  
Continuous Wave ◽  
Operating Regime ◽  
Free Carrier ◽  
Photon Absorption ◽  
Microring Resonators ◽  
Free Carrier Absorption ◽  
Coupling Coefficients ◽  
Linear Absorption ◽  
Carrier Absorption ◽  
Silicon Based

We theoretically examine the Fano lineshapes of silicon-based compound microring resonators consisting of a single resonator channel dropping filter linked to a loop as a feedback structure. All possible optical effects for the continuous-wave operating regime, such as linear absorption or scattering, two-photon absorption, free-carrier absorption and dispersion, thermo-optics, are simultaneously considered. We show that sharp Fano resonances can be tuned by variation in the coupling coefficients, length of feedback loop, effective free carrier lifetime and the temperature inside the device. Tunable Fano lineshapes open up opportunities for applications in sensing, computing, and communications.

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