Intuitive model to include the effect of free‐carrier absorption in calculating the two‐photon absorption coefficient

1992 ◽  
Vol 60 (2) ◽  
pp. 166-168 ◽  
Author(s):  
Frances R. Laughton ◽  
John H. Marsh ◽  
John S. Roberts
Keyword(s):  
Absorption Coefficient ◽  
Free Carrier ◽  
Photon Absorption ◽  
Free Carrier Absorption ◽  
Two Photon Absorption ◽  
Two Photon ◽  
Carrier Absorption ◽  
Two Photon Absorption Coefficient ◽  
Intuitive Model

Nonlinear Laser Melting Of Indium Antimonide And Silicon

1983 ◽  
Vol 13 ◽  
Author(s):  
Michael P. Hasselbeck ◽  
H. S. Kwok
Keyword(s):  
Indium Antimonide ◽  
Laser Light ◽  
Free Carrier ◽  
Photon Absorption ◽  
Free Carrier Absorption ◽  
Two Photon Absorption ◽  
Free Carriers ◽  
Two Photon ◽  
Avalanche Ionization ◽  
Carrier Absorption

ABSTRACTPulsed 10.6μm TEA CO2 laser light has been used to melt the semiconductors silicon and InSb. Measurements indicate that generation of free carriers necessary for melting may take place by nonlinear processes such as two-photon absorption or intraband avalanche ionization. If the semiconductor is sufficiently doped, melting may also result from linear free carrier absorption. In all cases, it appears that the molten depth exceeds several μm, which is much greater than obtained with lasers of shorter wavelength.

The Role of Free Carrier Absorption in LADA

2014 ◽  
Author(s):  
Kent Erington ◽  
Dan Bodoh ◽  
Kris Dickson ◽  
George Lange
Keyword(s):  
Integrated Circuit ◽  
Continuous Wave ◽  
Free Carrier ◽  
Photon Absorption ◽  
Free Carrier Absorption ◽  
Two Photon Absorption ◽  
Two Photon ◽  
Electron Hole Pair ◽  
Carrier Absorption

Abstract Laser-assisted device alteration (LADA) is an established technique used to identify critical speed paths in integrated circuit. In this paper, the characterization of continuous wave 1340nm laser induced currents and the LADA failure rate show that a two photon absorption explanation for the LADA effect is not plausible. The following sections confirm the results of a 28nm-node nMOS transistor using a 2.45NA solid immersion lens. The effects of global heating to that of local laser heating are then compared. The paper shows that the LADA response time to approximately 1300nm irradiation is << 100ns. It explains LADA at approximately 1300nm, free carrier absorption in the silicon and in the local silicide layers, and presents selected 1320nm LADA images on 28nm-node devices. Finally, it shows 1064nm LADA images on the same structure that indicate that 1064nm interaction with transistors is related to free carrier absorption, rather than electron-hole pair creation.

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