Ablation of metal surfaces by pulsed ultraviolet lasers under ultrahigh vacuum

1986 ◽  
Vol 3 (5) ◽  
pp. 796 ◽  
Author(s):  
R. Viswanathan ◽  
Ingo Hussla
1992 ◽  
Vol 45 (3) ◽  
pp. 1407-1411 ◽  
Author(s):  
D. C. Schoepf ◽  
S. Berko ◽  
K. F. Canter ◽  
P. Sferlazzo

1980 ◽  
Vol 73 (1) ◽  
pp. 588-589 ◽  
Author(s):  
M. Nilges ◽  
M. Shiotani ◽  
C. T. Yu ◽  
G. Barkley ◽  
Y. Kera ◽  
...  

1994 ◽  
Vol 354 ◽  
Author(s):  
Hidehiko Nonaka ◽  
Shigeyuki Sekine

AbstractIn order to search for the possibility to synthesize materials with new functions by laser deposition using source materials consisting of characterized microstructures, the porous silicon was ablated in ultrahigh vacuum with ultraviolet lasers of fluence as low as a few Jem”2. The ablated particles were analyzed by the time of flight method and the main species detected were atoms and small molecules such as Si, SÍ2, and SiO. The kinetics of the laser ablation of porous silicon in comparison with crystal silicon was also studied.


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