Behavior of Refractory Metal Surfaces in Ultrahigh Vacuum as Observed by Low-Energy Electron Diffraction (LEED) and Auger Electron Spectroscopy

1970 ◽  
Vol 7 (6) ◽  
pp. S90-S100 ◽  
Author(s):  
George J. Dooley ◽  
T. W. Haas
Keyword(s):  
Electron Diffraction ◽  
Auger Electron Spectroscopy ◽  
Refractory Metal ◽  
Electron Spectroscopy ◽  
Metal Surfaces ◽  
Auger Electron ◽  
Ultrahigh Vacuum ◽  
Low Energy ◽  
Low Energy Electron Diffraction ◽  
Low Energy Electron

LEED-AES STUDY OF SURFACE STRUCTURES FORMED AT COADSORPTION OF Al AND Sb ON (100), (111), AND (110) Si SURFACES

1994 ◽  
Vol 01 (02n03) ◽  
pp. 285-293 ◽  
Author(s):  
A.V. ZOTOV ◽  
S.V. RYZHKOV ◽  
V.G. LIFSHITS ◽  
V.G. DUCHINSKY
Keyword(s):  
Electron Diffraction ◽  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Low Energy ◽  
Energy Electron ◽  
Surface Structures ◽  
Low Energy Electron Diffraction ◽  
Surface Phases ◽  
Low Energy Electron

The formation of the ordered surface structures upon successive deposition of Al and Sb onto the Si(100), Si(111), and Si(110) surfaces held at about 650°C were studied by low-energy electron diffraction (LEED) and Auger electron spectroscopy (AES). The primary emphasis was given to the investigation of the formation of (Al, Sb)/Si interface at total coverages of adsorbates in submonolayer range. In this case, according to AES data the adsorption of Al and Sb atoms proceeds collaterally in a simple additive manner. In the LEED observations, several new reconstructions, Si (100)c(4×4), Si (100)2×8, Si(100)2×6, Si(111)2×2, [Formula: see text], and Si (110)3×4 which indicate the formation of the joint (Al, Sb)/Si surface phases were found. The conditions for the formation of the surface structures were summarized in the formation diagrams.

Ge diffusion on Si surfaces

Open Physics ◽  
2006 ◽  
Vol 4 (3) ◽  
Author(s):  
Andrey Dolbak ◽  
Boris Olshanetsky
Keyword(s):  
Electron Diffraction ◽  
Auger Electron Spectroscopy ◽  
Surface Diffusion ◽  
Diffusion Coefficients ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Low Energy ◽  
Low Energy Electron Diffraction ◽  
Temperature Range ◽  
Low Energy Electron

AbstractGe diffusion on Si(100), (111), and (110) surfaces has been studied by Auger electron spectroscopy and low energy electron diffraction in the temperature range from 600 to 800 °C. Surface diffusion coefficients versus temperature have been measured.

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