Extended open cavities for polaritonic devices and exciton-polariton condensation: Low threshold for non-linear emission with low quantum efficiency emitters

2019 ◽  
Author(s):  
J. Gómez Rivas ◽  
M. Ramezani
Keyword(s):  
Quantum Efficiency ◽  
Open Cavities ◽  
Non Linear ◽  
Low Threshold

scholarly journals Optical Parametric Oscillation with Ultra-low Power Threshold in a Dimer of Active-Passive Cavities

Crystals ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 566
Author(s):  
Bo Lu ◽  
Chen-Rui Fan ◽  
Jun-Yang Song ◽  
Chuan Wang
Keyword(s):  
Pump Power ◽  
Energy Conversion ◽  
Energy Conversion Efficiency ◽  
Parametric Oscillation ◽  
Optical Parametric Oscillation ◽  
Optical Parametric ◽  
Non Linear ◽  
Oscillation Process ◽  
Power Threshold ◽  
Low Threshold

Optical parametric oscillation can convert the input laser into a couple of coherent optical output with signal and idler frequencies. It is an important method for the realization of the broadband middle infrared tunable lasers. The optical parametric oscillation process depends on the ultra-fast non-linear response of matter to light with a certain pump power. Therefore, reducing the pump threshold of the optical parametric oscillation process and improving the energy conversion efficiency are of great significance to the study of non-linear optics. In this paper, we construct a dimer system that couples a passive non-linear resonator to an active resonator. Based on the dimer system, an ultra-low threshold optical parametric oscillation generation method is proposed. By coupling the gain pump mode, the non-linear effect is effectively enhanced, the pump power threshold is reduced to half of when there is no gain, and the energy conversion efficiency is increased. We believe this research provides a feasible method for a low-threshold tunable and easy-to-integrate optical parametric oscillation laser source.

Low-threshold high-quantum-efficiency laterally gain-coupled InGaAs/AlGaAs distributed feedback lasers

1999 ◽  
Vol 74 (4) ◽  
pp. 483-485 ◽  
Author(s):  
M. Kamp ◽  
J. Hofmann ◽  
A. Forchel ◽  
F. Schäfer ◽  
J. P. Reithmaier
Keyword(s):  
Quantum Efficiency ◽  
Distributed Feedback ◽  
Distributed Feedback Lasers ◽  
High Quantum Efficiency ◽  
High Quantum ◽  
Low Threshold

Thermally stable J-type phthalocyanine dimers as new non-linear absorbers for low-threshold optical limiters

2016 ◽  
Vol 18 (23) ◽  
pp. 15964-15971 ◽  
Author(s):  
Alexander Yu. Tolbin ◽  
Mikhail S. Savelyev ◽  
Alexander Yu. Gerasimenko ◽  
Larisa G. Tomilova ◽  
Nikolay S. Zefirov
Keyword(s):  
Laser Radiation ◽  
Thermally Stable ◽  
Optical Limiters ◽  
Dimeric Complexes ◽  
Non Linear ◽  
Low Threshold ◽  
532 Nm

The possibility of developing new advanced optical limiters of laser radiation at 532 nm with low limiting thresholds has been demonstrated on thermally stable phthalocyanine J-type dimeric complexes of Mg, Zn, Cu, Ni, and Co.

InGaAs/GaAs/GaInP SCH-SQW lasers with low threshold current and high internal quantum efficiency

1992 ◽  
Vol 28 (6) ◽  
pp. 595 ◽  
Author(s):  
G. Zhang ◽  
J. Näppi ◽  
K. Vänttinen ◽  
H. Asonen ◽  
M. Pessa
Keyword(s):  
Quantum Efficiency ◽  
Internal Quantum Efficiency ◽  
Threshold Current ◽  
Low Threshold

Low‐threshold, high quantum efficiency stop‐cleaved InGaAsP semiconductor lasers

1985 ◽  
Vol 58 (4) ◽  
pp. 1686-1688 ◽  
Author(s):  
A. Antreasyan ◽  
C. Y. Chen ◽  
S. G. Napholtz ◽  
D. P. Wilt
Keyword(s):  
Semiconductor Lasers ◽  
Quantum Efficiency ◽  
High Quantum Efficiency ◽  
High Quantum ◽  
Low Threshold

High-quantum-efficiency low-threshold microcleaved AlxGa1−xAs lasers

1982 ◽  
Vol 18 (16) ◽  
pp. 690 ◽  
Author(s):  
B.F. Levine ◽  
J.P. van der Ziel ◽  
R.A. Logan ◽  
C.G. Bethea
Keyword(s):  
Quantum Efficiency ◽  
High Quantum Efficiency ◽  
High Quantum ◽  
Low Threshold

Effects of Spacer Thickness on the Performance of InGaAs/GaAs Quantum Dot Lasers

2000 ◽  
Vol 642 ◽  
Author(s):  
Nien-Tze Yeh ◽  
Wei-Shen Liu ◽  
Shu-Han Chen ◽  
Jen-Inn Chyi
Keyword(s):  
Quantum Dot ◽  
Quantum Efficiency ◽  
Internal Quantum Efficiency ◽  
Characteristic Temperature ◽  
Threshold Current ◽  
Inhomogeneous Broadening ◽  
Quantum Dot Lasers ◽  
Low Threshold ◽  
Spacer Thickness ◽  
Gaas Quantum Dot

ABSTRACTIt is found that the performance of self-assembled In0.5Ga0.5As/GaAs multi-stack quantum dot lasers is sensitive to the GaAs spacer thickness between the dots. Reducing the spacer thickness from 30 nm to 10 nm leads to narrow photoluminescence linewidth, low threshold current, high characteristic temperature and high internal quantum efficiency. This behavior is attributed to inhomogeneous broadening caused by dot size fluctuation related to spacer thickness.

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