InGaAs/GaAs/GaInP SCH-SQW lasers with low threshold current and high internal quantum efficiency

1992 ◽  
Vol 28 (6) ◽  
pp. 595 ◽  
Author(s):  
G. Zhang ◽  
J. Näppi ◽  
K. Vänttinen ◽  
H. Asonen ◽  
M. Pessa
Keyword(s):  
Quantum Efficiency ◽  
Internal Quantum Efficiency ◽  
Threshold Current ◽  
Low Threshold

Effects of Spacer Thickness on the Performance of InGaAs/GaAs Quantum Dot Lasers

2000 ◽  
Vol 642 ◽  
Author(s):  
Nien-Tze Yeh ◽  
Wei-Shen Liu ◽  
Shu-Han Chen ◽  
Jen-Inn Chyi
Keyword(s):  
Quantum Dot ◽  
Quantum Efficiency ◽  
Internal Quantum Efficiency ◽  
Characteristic Temperature ◽  
Threshold Current ◽  
Inhomogeneous Broadening ◽  
Quantum Dot Lasers ◽  
Low Threshold ◽  
Spacer Thickness ◽  
Gaas Quantum Dot

ABSTRACTIt is found that the performance of self-assembled In0.5Ga0.5As/GaAs multi-stack quantum dot lasers is sensitive to the GaAs spacer thickness between the dots. Reducing the spacer thickness from 30 nm to 10 nm leads to narrow photoluminescence linewidth, low threshold current, high characteristic temperature and high internal quantum efficiency. This behavior is attributed to inhomogeneous broadening caused by dot size fluctuation related to spacer thickness.

scholarly journals Лазеры на основе квантовых яма-точек, излучающие в оптических диапазонах 980 и 1080 nm

2019 ◽  
Vol 45 (4) ◽  
pp. 42
Author(s):  
А.М. Надточий ◽  
С.А. Минтаиров ◽  
Н.А. Калюжный ◽  
Ю.М. Шерняков ◽  
Г.О. Корнышов ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Efficiency ◽  
Current Density ◽  
Internal Quantum Efficiency ◽  
Active Regions ◽  
Threshold Current ◽  
Threshold Current Density ◽  
New Type ◽  
Emitting Lasers

AbstractThe main characteristics of edge-emitting lasers with active regions based on nanoheterostructures of a new type—quantum well-dots (QWDs) operating at various wavelengths—are compared. The QWD structures operating at 980- and 1080-nm wavelengths demonstrated minimum values of threshold current density (160 and 125 A/cm^2), high internal quantum efficiency (74 and 85%), and low internal losses (1.1 and 0.9 cm^–1), respectively.

Extremely low threshold current 1.52 μm InGaAsP/InP MS-DFB lasers with second-order grating

1986 ◽  
Vol 22 (15) ◽  
pp. 802 ◽  
Author(s):  
H. Burkhard ◽  
E. Kuphal ◽  
H.W. Dinges
Keyword(s):  
Threshold Current ◽  
Second Order ◽  
Low Threshold

scholarly journals Perspectives on UVC LED: Its Progress and Application

Photonics ◽  
2021 ◽  
Vol 8 (6) ◽  
pp. 196
Author(s):  
Tsung-Chi Hsu ◽  
Yu-Tsai Teng ◽  
Yen-Wei Yeh ◽  
Xiaotong Fan ◽  
Kuo-Hsiung Chu ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
Flip Chip ◽  
Layer Structure ◽  
Light Emitting Diode ◽  
Internal Quantum Efficiency ◽  
Reverse Current ◽  
Light Extraction ◽  
Epitaxial Layers ◽  
High Electron ◽  
Recombination Rates

High-quality epitaxial layers are directly related to internal quantum efficiency. The methods used to design such epitaxial layers are reviewed in this article. The ultraviolet C (UVC) light-emitting diode (LED) epitaxial layer structure exhibits electron leakage; therefore, many research groups have proposed the design of blocking layers and carrier transportation to generate high electron–hole recombination rates. This also aids in increasing the internal quantum efficiency. The cap layer, p-GaN, exhibits high absorption in deep UV radiation; thus, a small thickness is usually chosen. Flip chip design is more popular for such devices in the UV band, and the main factors for consideration are light extraction and heat transportation. However, the choice of encapsulation materials is important, because unsuitable encapsulation materials will be degraded by ultraviolet light irradiation. A suitable package design can account for light extraction and heat transportation. Finally, an atomic layer deposition Al2O3 film has been proposed as a mesa passivation layer. It can provide a low reverse current leakage. Moreover, it can help increase the quantum efficiency, enhance the moisture resistance, and improve reliability. UVC LED applications can be used in sterilization, water purification, air purification, and medical and military fields.

The novel Sr3LiSbO6:Mn4+, Ca2+ far-red-emitting phosphors with over 95% internal quantum efficiency for indoor plant growth LEDs

2021 ◽  
Vol 237 ◽  
pp. 118165
Author(s):  
Linyan Fu ◽  
Yunlong Yang ◽  
Yi Zhang ◽  
Xuefei Ren ◽  
Yingjie Zhu ◽  
...  
Keyword(s):  
Plant Growth ◽  
Quantum Efficiency ◽  
Internal Quantum Efficiency ◽  
The Novel

Low Threshold Current Density (100) GaInAsP/InP Double-Heterostructure Lasers for Wavelength 1.3 µm

1979 ◽  
Vol 18 (9) ◽  
pp. 1795-1805 ◽  
Author(s):  
Yoshio Itaya ◽  
Yasuharu Suematsu ◽  
Shinya Katayama ◽  
Katsumi Kishino ◽  
Shigehisa Arai
Keyword(s):  
Current Density ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Double Heterostructure ◽  
Low Threshold
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