Effective Carrier Confinement in Microdisk Lasers by Strain Relaxation in Quantum Wells

2002 ◽  
Author(s):  
Masayuki Fujita ◽  
Reona Ushigome ◽  
Toshihiko Baba
Keyword(s):  
Quantum Wells ◽  
Strain Relaxation ◽  
Carrier Confinement ◽  
Microdisk Lasers ◽  
Effective Carrier

Strain relaxation effect in microdisk lasers with compressively strained quantum wells

2002 ◽  
Vol 80 (9) ◽  
pp. 1511-1513 ◽  
Author(s):  
Masayuki Fujita ◽  
Reona Ushigome ◽  
Toshihiko Baba
Keyword(s):  
Quantum Wells ◽  
Strain Relaxation ◽  
Relaxation Effect ◽  
Strained Quantum Wells ◽  
Microdisk Lasers

Ultra-thin curved visible microdisk lasers with three-dimensional whispering gallery modes

Nanophotonics ◽  
2020 ◽  
Vol 9 (9) ◽  
pp. 2997-3002
Author(s):  
Taojie Zhou ◽  
Kar Wei Ng ◽  
Xiankai Sun ◽  
Zhaoyu Zhang
Keyword(s):  
Integrated Circuits ◽  
Quantum Wells ◽  
Strain Relaxation ◽  
Three Dimensional ◽  
Single Mode ◽  
Whispering Gallery Modes ◽  
Spatial Profile ◽  
Spatial Intensity Distribution ◽  
Whispering Gallery ◽  
Microdisk Lasers

AbstractMicrodisk lasers are important components in photonic integrated circuits (PICs), of which the whispering gallery modes (WGMs) are usually confined within a two-dimensional (2D) planar slab. Here, owing to the strain relaxation of quantum wells by wet-etching method, we present ultra-thin curved visible microdisk lasers with single-mode lasing emission and a high quality factor of ∼17,000, which enable a 3D spatial intensity distribution of WGMs and provide an extra degree of freedom for the confined photons compared with the conventional 2D in-plane WGMs. The curved microdisk lasers with a 3D spatial profile of WGMs may provide attractive applications in flexible and multilevel photon sources for the PICs.

Strain‐induced lateral carrier confinement in quantum wells grafted onto nonplanar substrates

1992 ◽  
Vol 61 (11) ◽  
pp. 1319-1321 ◽  
Author(s):  
Winston K. Chan ◽  
T. S. Ravi ◽  
K. Kash ◽  
Jürgen Christen ◽  
Thomas J. Gmitter ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Carrier Confinement

Strain relaxation behavior of InxGa1−xAs quantum wells on vicinal GaAs (111)B substrates

2002 ◽  
Vol 80 (9) ◽  
pp. 1541-1543 ◽  
Author(s):  
M. Gutiérrez ◽  
D. González ◽  
G. Aragón ◽  
R. Garcı́a ◽  
M. Hopkinson ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Strain Relaxation ◽  
Relaxation Behavior

Strain relaxation of ZnCdSe quantum wells grown on (211)B GaAs measured using the piezoelectric effect

1999 ◽  
Vol 201-202 ◽  
pp. 510-513
Author(s):  
J.S Milnes ◽  
S.A Telfer ◽  
C Morhain ◽  
B Urbaszek ◽  
K.A Prior ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Piezoelectric Effect ◽  
Strain Relaxation

Bandstructure Near Misfit Dislocations in Si Quantum Wells

1998 ◽  
Vol 4 (S2) ◽  
pp. 794-795
Author(s):  
P.E. Batson
Keyword(s):  
Quantum Wells ◽  
Conduction Band ◽  
Electron Mobility ◽  
Axial Strain ◽  
Strain Relaxation ◽  
Local Potential ◽  
Misfit Dislocations ◽  
High Electron ◽  
Strained Si ◽  
Growth Interface

High electron mobility structures have been built for several years now using strained silicon layers grown on SixGe(1-x) with x in the 25-40% range. In these structures, a thin layer of silicon is grown between layers of unstrained GeSi alloy. Matching of the two lattices in the plane of growth produces a bi-axial strain in the silicon, splitting the conduction band and providing light electron levels for enhanced mobility. If the silicon channel becomes too thick, strain relaxation can occur by injection of misfit dislocations at the growth interface between the silicon and GeSi alloy. The strain field of these dislocations then gives rise to a local potential variation that limits electron mobility in the strained Si channel. This study seeks to verify this mechanism by measuring the absolute conduction band shifts which track the local potential near the misfit dislocations.

V-Defect and Dislocation Analysis in InGaN Multiple Quantum Wells on Patterned Sapphire Substrate

2018 ◽  
Vol 787 ◽  
pp. 37-41
Author(s):  
Huan You Wang ◽  
Qiao Lai Tan ◽  
Gui Jin
Keyword(s):  
Quantum Wells ◽  
Strain Relaxation ◽  
Chemical Vapor ◽  
Multiple Quantum ◽  
Cross Sectional ◽  
Patterned Sapphire Substrate ◽  
Sapphire Substrates ◽  
Transmission Electron ◽  
Multi Quantum Well ◽  
Patterned Sapphire Substrates

InGaN/GaN multiquantum well (MQW) structures have been grown on cone-shaped patterned sapphire substrates (CPSS) by metalorganic chemical vapor deposition (MOCVD). From the transmission electron microscopy (TEM) results, we found that most of the threading dislocations (TDs) in the trench region of the CPSS were bent by lateral growth mode. Also the staircase-like TDs were observed near the slant region of the cone pattern, they converged at the slope of the cone patterned region by staircase-upward propagation, which seems to effectively prevent TDs from vertical propagation in the trench region. The associated dislocation runs up into the overgrown GaN layer and MQW, and some (a+c) dislocations were shown to decompose inside the multi-quantum well, giving rise to a misfit segment in the c-plane and a V-shape defect. From cross-sectional TEM, we found that all V defects are not always connected with TDs at their bottom, some V defects are generated from the stacking mismatch boundaries induced by stacking faults which are formed within the MQW due to the strain relaxation.

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