High-speed Er-doped LiNbO3 waveguide lasers

Author(s):  
H. SUCHE
Keyword(s):  
1997 ◽  
Vol 33 (3) ◽  
pp. 214
Author(s):  
R. LaComb ◽  
D.K. Wagner ◽  
L. DiMarco ◽  
J. Connolly

2001 ◽  
Author(s):  
Sylvain Blaize ◽  
Jean-Emmanuel Broquin ◽  
Jacob Philipsen ◽  
Cedric Cassagnetes

1993 ◽  
Vol 301 ◽  
Author(s):  
S. Gupta ◽  
S. Sethi ◽  
P. K. Bhattacharya ◽  
S. Williamson

ABSTRACTThe observation of 1.54 μm luminescence in erbium-doped-GaAs (GaAs:Er) and AlxGal-xAs, has stimulated research efforts because of their potential application to light sources in optical communications. In this paper, we study a different aspect of the photoresponse behavior of this material. The dependence of the carrier lifetime on the doping concentration of Erbium is investigated in GaAs:Er grown by MBE. A reduction in the carrier lifetime down to ∼1 ps is observed for the highest doping (∼5×1019 cm−3) investigated. Together with the high-resistivity observed for the higher doping values, this material serves as a novel photoconductor material for high-speed optoelectronics.


1995 ◽  
Author(s):  
Danilo Scarano ◽  
Ivo Montrosset

2005 ◽  
Author(s):  
Tian-Tsorng Shi ◽  
Ming-Cheng Wang ◽  
Jau-Yang Su ◽  
Sun-Chien Ko ◽  
Chwan-Yang Chang ◽  
...  

1995 ◽  
Vol 16 (3) ◽  
pp. 106-108 ◽  
Author(s):  
S. Sethi ◽  
T. Brock ◽  
P.K. Bhattacharya ◽  
J. Kim ◽  
S. Williamson ◽  
...  

1997 ◽  
Author(s):  
J. Amin ◽  
David L. Veasey ◽  
Norman A. Sanford ◽  
Joseph S. Hayden

2006 ◽  
Author(s):  
Sanna Yliniemi ◽  
Jacques Albert ◽  
Albane Laronche ◽  
Qing Wang ◽  
Seppo Honkanen

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