Laser-induced thermal phonon squeezing

2012 ◽  
Author(s):  
Eeuwe S. Zijlstra
Keyword(s):  
Thermal Phonon ◽  
Phonon Squeezing

Thermal phonon scattering in Li-doped Si

1974 ◽  
Vol 9 (6) ◽  
pp. 2530-2538 ◽  
Author(s):  
D. Fortier ◽  
K. Suzuki
Keyword(s):  
Phonon Scattering ◽  
Thermal Phonon

Observation of Thermal Phonon Resonance in Cylindrical Microcavities

1999 ◽  
Vol 38 (Part 1, No. 8) ◽  
pp. 4932-4935 ◽  
Author(s):  
Koichiro Hattori ◽  
Keiji Sakai ◽  
Kenshiro Takagi
Keyword(s):  
Thermal Phonon

scholarly journals Coherent control of thermal phonon transport in van der Waals superlattices

Nanoscale ◽  
2018 ◽  
Vol 10 (30) ◽  
pp. 14432-14440 ◽  
Author(s):  
Ruiqiang Guo ◽  
Young-Dahl Jho ◽  
Austin J. Minnich
Keyword(s):  
Coherent Control ◽  
Van Der Waals ◽  
Phonon Transport ◽  
Thermal Phonon ◽  
Natural Materials ◽  
Property Space ◽  
Coherent Manipulation

Coherent manipulation of thermal phonon transport in vdW superlattices can expand the property space beyond that occupied by natural materials.

Semi-ballistic thermal phonon transport in Sil-xGex nanowires

2019 ◽  
Author(s):  
Noboru Okamoto ◽  
Ryoto Yanagisawa ◽  
Md. Mahfuz Alam ◽  
Kentarou Sawano ◽  
Masashi Kurosawa ◽  
...  
Keyword(s):  
Phonon Transport ◽  
Thermal Phonon

scholarly journals Radiative and non-radiative transitions of excited Ti3+ cations in sapphire

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Avry Shirakov ◽  
Zeev Burshtein ◽  
Yehoshua Shimony ◽  
Eugene Frumker ◽  
Amiel A. Ishaaya
Keyword(s):  
Temperature Dependence ◽  
Electronic State ◽  
Fluorescence Lifetime ◽  
Radiative Lifetime ◽  
Radiative Transition ◽  
Zero Temperature ◽  
Thermal Phonon ◽  
Radiative Transitions ◽  
Thermal Enhancement ◽  
Radiative Transition Rate

AbstractWe have measured the fluorescence quantum efficiency in Ti3+:sapphire single crystals between 150 K and 550 K. Using literature-given effective fluorescence lifetime temperature dependence, we show that the zero temperature radiative lifetime is (4.44 ± 0.04) μs, compared to the 3.85 μs of the fluorescence lifetime. Fluorescence lifetime thermal shortening resolves into two parallel effects: radiative lifetime shortening, and non-radiative transition rate enhancement. The first is due to thermally enhanced occupation of a ΔE = 1,700 cm−1 higher (top) electronic state of the upper multiplet, exhibiting a transition oscillator strength of f = 0.62, compared to only 0.013 of the bottom electronic state of the same multiplet. The non-radiative rate relates to multi-phonon decay transitions stimulated by the thermal phonon occupation. Thermal enhancement of the configuration potential anharmonicity is also observed. An empiric expression for the figure-of-anharmonicity temperature dependence is given as $$\hat{{\bf{H}}}$$Hˆ (T) = $$\hat{{\bf{H}}}$$Hˆ (0)(1 + β exp(−ℏωco /kBT )), where $$\hat{{\bf{H}}}$$Hˆ (0) = 0.276, β = 5.2, ℏωco = 908 cm−1, and kB is the Boltzmann constant.

scholarly journals Phonon squeezing via correlations in the superconducting electron-phonon interaction

1995 ◽  
Vol 51 (21) ◽  
pp. 15363-15368 ◽  
Author(s):  
T. Hakiog¯lu ◽  
V. A. Ivanov ◽  
A. S. Shumovsky ◽  
B. Tanatar
Keyword(s):  
Phonon Interaction ◽  
Electron Phonon Interaction ◽  
Phonon Squeezing
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