Fabrication of AlN-GaN-AlN sub-micron waveguide with cleaved facets

2011 ◽  
Author(s):  
Vivek Krishnamurthy ◽  
Chen Yijing ◽  
Lai Yicheng ◽  
Seng-Tiong Ho
Keyword(s):  
Cleaved Facets

scholarly journals Interband Cascade Photonic Integrated Circuits on Native III-V Chip

Sensors ◽  
2021 ◽  
Vol 21 (2) ◽  
pp. 599
Author(s):  
Jerry R. Meyer ◽  
Chul Soo Kim ◽  
Mijin Kim ◽  
Chadwick L. Canedy ◽  
Charles D. Merritt ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Integrated Circuit ◽  
Detection System ◽  
Laser Cavity ◽  
Building Blocks ◽  
Drive Power ◽  
Optical Elements ◽  
Photonic Integrated Circuit ◽  
Cleaved Facets ◽  
On Chip

We describe how a midwave infrared photonic integrated circuit (PIC) that combines lasers, detectors, passive waveguides, and other optical elements may be constructed on the native GaSb substrate of an interband cascade laser (ICL) structure. The active and passive building blocks may be used, for example, to fabricate an on-chip chemical detection system with a passive sensing waveguide that evanescently couples to an ambient sample gas. A variety of highly compact architectures are described, some of which incorporate both the sensing waveguide and detector into a laser cavity defined by two high-reflectivity cleaved facets. We also describe an edge-emitting laser configuration that optimizes stability by minimizing parasitic feedback from external optical elements, and which can potentially operate with lower drive power than any mid-IR laser now available. While ICL-based PICs processed on GaSb serve to illustrate the various configurations, many of the proposed concepts apply equally to quantum-cascade-laser (QCL)-based PICs processed on InP, and PICs that integrate III-V lasers and detectors on silicon. With mature processing, it should become possible to mass-produce hundreds of individual PICs on the same chip which, when singulated, will realize chemical sensing by an extremely compact and inexpensive package.

Fabrication and Optical Pumping of Laser Cavities Made by Cleaving and Wet Chemical Etching

1997 ◽  
Vol 482 ◽  
Author(s):  
D. Stocker ◽  
E. F. Schubert ◽  
W. Grieshaber ◽  
J. M. Redwing ◽  
K. S. Boutros ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
Chemical Etching ◽  
Optical Pumping ◽  
Laser Action ◽  
Laser Cavity ◽  
A Value ◽  
Optically Pumped Laser ◽  
Cleaved Facets ◽  
Wet Chemical ◽  
Wet Chemical Etching

AbstractWe report on fabrication and characterization of cleaved laser facets and photoelectrochemically wet etched laser facets in III-Nitrides grown by MOVPE on c-plane sapphire. The roughness of the cleaved facets in the InGaN/GaN double heterostructure (DH) laser cavities with a 1000-Å-thick active region is ≈25 rim, while that of the wet etched GaN facets is ≈100 nm. A theoretical model is developed for the maximum allowable laser facet roughness, which yields a value of 18 nrm for uncoated GaN and 22 rm for the uncoated DH. Optically pumped laser action at room temperature is demonstrated in the cleaved DH laser cavities. 2 Above the incident threshold pumping power of 1.3 MW/cm2, the differential quantum efficiency increases by a factor of 34, the emission linewidth decreases to 13.5 meV, and the output becomes highly TE polarized. Wet chemical etching a 1-mm-long laser cavity into the GaN homostructure is found to increase the differential quantum efficiency by a factor of 2.

Stimulated emission at 272 nm from an AlxGa1−xN-based multiple-quantum-well laser with two-step etched facets

RSC Advances ◽  
2016 ◽  
Vol 6 (55) ◽  
pp. 50245-50249 ◽  
Author(s):  
Yingdong Tian ◽  
Yun Zhang ◽  
Jianchang Yan ◽  
Xiang Chen ◽  
Junxi Wang ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Efficiency ◽  
Multiple Quantum Well ◽  
Stimulated Emission ◽  
Lower Threshold ◽  
Multiple Quantum ◽  
Optically Pumped ◽  
Quantum Well Laser ◽  
Cleaved Facets ◽  
Multiple Quantum Well Laser

We demonstrate an optically pumped AlGaN-based laser at 272 nm with two-step etched facets. Compared with a laser with cleaved facets, the laser with etched facets had a lower threshold and higher differential quantum efficiency.

Effect of n-AlGaN cleave assistance layers on the morphology of c -plane cleaved facets for m -plane InGaN/GaN laser diodes

2011 ◽  
Vol 8 (7-8) ◽  
pp. 2226-2228 ◽  
Author(s):  
M. T. Hardy ◽  
R. M. Farrell ◽  
Po S. Hsu ◽  
D. A. Haeger ◽  
K. Kelchner ◽  
...  
Keyword(s):  
Laser Diodes ◽  
Cleaved Facets

scholarly journals Гетероструктуры квантово-каскадных лазеров с неселективным заращиванием методом газофазной эпитаксии

2021 ◽  
Vol 47 (24) ◽  
pp. 46
Author(s):  
А.В. Бабичев ◽  
А.Г. Гладышев ◽  
Д.В. Денисов ◽  
В.В. Дюделев ◽  
Д.А. Михайлов ◽  
...  
Keyword(s):  
Quantum Cascade Laser ◽  
Surface Defects ◽  
Vapour Phase ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Structural Quality ◽  
Vapour Phase Epitaxy ◽  
Quantum Cascade ◽  
Laser Heterostructures ◽  
Cleaved Facets

The possibility of fabrication of 4.6 µm spectral range quantum-cascade laser heterostructures by molecular-beam epitaxy technique with non-selective overgrowth by the metalorganic vapour-phase epitaxy is shown. The active region of the laser was formed on the basis of a heteropair of In0.67Ga0.33As/In0.36Al0.64As solid alloys. The waveguide claddings are formed by indium phosphide. The results of surface defects inspection and X-ray diffraction analysis of quantum-cascade laser heterostructures allow to conclude that the structural quality of the heterostructures is high and the estimated value of the root mean square surface roughness does not exceed 0.7 nm. Lasers with four cleaved facets exhibit lasing at room temperature with a relatively low threshold current density of the order of 1 kA /cm2.

scholarly journals Мощные квантово-каскадные лазеры с длиной волны генерации 8 μm

2019 ◽  
Vol 45 (14) ◽  
pp. 48
Author(s):  
А.В. Бабичев ◽  
В.В. Дюделев ◽  
А.Г. Гладышев ◽  
Д.А. Михайлов ◽  
А.С. Курочкин ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Cascade Laser ◽  
Room Temperature ◽  
Molecular Beam ◽  
Optical Power ◽  
Output Optical Power ◽  
Quantum Cascade ◽  
Fabry Perot ◽  
Cleaved Facets ◽  
Lattice Matched

The heterostructure of a quantum-cascade laser based on In0.53Ga0.47As/Al0.48In0.52As heteropair lattice matched with the InP was grown by molecular beam epitaxy. InP layers was used to form the optical waveguide. Room temperature lasing in the spectral range of 8 μm in the standard ridge geometry of a Fabry-Perot cavity formed by cleaved facets with peak output optical power of 0.45 W was obtained.

Growth mechanisms of self-assembled InAs quantum dots on (110) AlAs/GaAs cleaved facets

2008 ◽  
Vol 44 (4-5) ◽  
pp. 425-430 ◽  
Author(s):  
E. Uccelli ◽  
S. Nürnberger ◽  
M. Bichler ◽  
G. Abstreiter ◽  
A. Fontcuberta i Morral
Keyword(s):  
Quantum Dots ◽  
Growth Mechanisms ◽  
Inas Quantum Dots ◽  
Cleaved Facets ◽  
Self Assembled

Cleaved Facets in Gan by Wafer Fusion of Gan to Inp

1996 ◽  
Vol 421 ◽  
Author(s):  
R. K. Sink ◽  
S. Keller ◽  
B. P. Keller ◽  
D. I. Babić ◽  
A. L. HOLMES ◽  
...  
Keyword(s):  
Opposite Direction ◽  
Basal Plane ◽  
Wafer Surface ◽  
Ohmic Conduction ◽  
Wafer Fusion ◽  
Cleaved Facets ◽  
Common Substrate ◽  
Crystallographic Planes

AbstractBasal plane sapphire is a common substrate for the heteroepitaxy of GaN. This presents a challenge for fabrication of cleaved facet GaN lasers because the natural cleavage planes in (0001) α-A12O3 are not perpendicular to the wafer surface. This paper describes a method for achieving perpendicular cleaved facets through wafer fusion that can potentially be used to fabricate GaN based in-plane lasers. We demonstrate successful fusion of GaN to InP without voids or oxide at the interface and fabricate optically flat cleaved GaN facets that are parallel to the crystallographic planes of the host InP. I-V measurements have been performed across the n-N fused interface. These results show that the fused interface exhibits a barrier for electrons passing from the InP to the GaN and ohmic conduction of electrons moving in the opposite direction.

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