Cleaved Facets in Gan by Wafer Fusion of Gan to Inp

1996 ◽  
Vol 421 ◽  
Author(s):  
R. K. Sink ◽  
S. Keller ◽  
B. P. Keller ◽  
D. I. Babić ◽  
A. L. HOLMES ◽  
...  
Keyword(s):  
Opposite Direction ◽  
Basal Plane ◽  
Wafer Surface ◽  
Ohmic Conduction ◽  
Wafer Fusion ◽  
Cleaved Facets ◽  
Common Substrate ◽  
Crystallographic Planes

AbstractBasal plane sapphire is a common substrate for the heteroepitaxy of GaN. This presents a challenge for fabrication of cleaved facet GaN lasers because the natural cleavage planes in (0001) α-A12O3 are not perpendicular to the wafer surface. This paper describes a method for achieving perpendicular cleaved facets through wafer fusion that can potentially be used to fabricate GaN based in-plane lasers. We demonstrate successful fusion of GaN to InP without voids or oxide at the interface and fabricate optically flat cleaved GaN facets that are parallel to the crystallographic planes of the host InP. I-V measurements have been performed across the n-N fused interface. These results show that the fused interface exhibits a barrier for electrons passing from the InP to the GaN and ohmic conduction of electrons moving in the opposite direction.

Basal Plane Dislocation Multiplication via the Hopping Frank-Read Source Mechanism and Observations of Prismatic Glide in 4H-SiC

2012 ◽  
Vol 717-720 ◽  
pp. 327-330 ◽  
Author(s):  
Huan Huan Wang ◽  
Sha Yan Byrapa ◽  
F. Wu ◽  
Balaji Raghothamachar ◽  
Michael Dudley ◽  
...  
Keyword(s):  
Shear Stress ◽  
Slip Plane ◽  
Opposite Direction ◽  
Edge Dislocation ◽  
Basal Plane ◽  
Detailed Mechanism ◽  
Slip Planes ◽  
Basal Plane Dislocation ◽  
Edge Dislocations ◽  
Dislocation Multiplication

In this paper, we report on the synchrotron white beam topographic (SWBXT) observation of “hopping” Frank-Read sources in 4H-SiC. A detailed mechanism for this process is presented which involves threading edge dislocations experiencing a double deflection process involving overgrowth by a macrostep (MP) followed by impingement of that macrostep against a step moving in the opposite direction. These processes enable the single-ended Frank-Read sources created by the pinning of the deflected basal plane dislocation segments at the less mobile threading edge dislocation segments to “hop” from one slip plane to other parallel slip planes. We also report on the nucleation of 1/3< >{ } prismatic dislocation half-loops at the hollow cores of micropipes and their glide under thermal shear stress.

Dislocation Activity in 4H-SiC in the Brittle Domain

2010 ◽  
Vol 645-648 ◽  
pp. 335-338
Author(s):  
Jean Luc Demenet ◽  
Madyan Amer ◽  
Alexandre Mussi ◽  
Jacques Rabier
Keyword(s):  
Transition Temperature ◽  
Single Crystals ◽  
Basal Plane ◽  
High Stress ◽  
Previous Literature ◽  
Dislocation Activity ◽  
Brittle To Ductile Transition ◽  
Crystallographic Planes

Results of deformation experiments on 4H-SiC single crystals below the usual brittle to ductile transition temperature are reported and discussed in comparison of previous literature data. Si-core and C-core partials are evidenced in the basal plane, and perfect dislocations are also observed on other crystallographic planes. These results could indicate that dislocation activity under high stress is more complex than expected.

GaP/Si Heterojunction with Ohmic Conduction Fabricated by Wafer Fusion Technique

2000 ◽  
Vol 39 (Part 2, No. 9A/B) ◽  
pp. L905-L907 ◽  
Author(s):  
Akitaka Soeno ◽  
Daisuke Kajita ◽  
Jun Suda ◽  
Hiroyuki Matsunami
Keyword(s):  
Ohmic Conduction ◽  
Fusion Technique ◽  
Wafer Fusion

High-resolution structure determination by ALCHEMI

1983 ◽  
Vol 41 ◽  
pp. 178-181 ◽  
Author(s):  
Peter G. Self ◽  
Peter R. Buseck
Keyword(s):  
Site Occupancy ◽  
Real Space ◽  
Unit Cell ◽  
Bragg Angle ◽  
Electron Current ◽  
High Resolution Structure ◽  
Beam Incident ◽  
Crystallographic Planes ◽  
Electron Beam Incident ◽  
Resolution Structure

ALCHEMI (Atom Location by CHanneling Enhanced Microanalysis) enables the site occupancy of atoms in single crystals to be determined. In this article the fundamentals of the method for both EDS and EELS will be discussed. Unlike HRTEM, ALCHEMI does not place stringent resolution requirements on the microscope and, because EDS clearly distinguishes between elements of similar atomic number, it can offer some advantages over HRTEM. It does however, place certain constraints on the crystal. These constraints are: a) the sites of interest must lie on alternate crystallographic planes, b) the projected charge density on the alternate planes must be significantly different, and c) there must be at least one atomic species that lies solely on one of the planes.An electron beam incident on a crystal undergoes elastic scattering; in reciprocal space this is seen as a diffraction pattern and in real space this is a modulation of the electron current across the unit cell. When diffraction is strong (i.e., when the crystal is oriented near to the Bragg angle of a low-order reflection) the electron current at one point in the unit cell will differ significantly from that at another point.

Observations of the Thermal Decomposition of Brucite

1968 ◽  
Vol 26 ◽  
pp. 446-447
Author(s):  
P. L. Burnett ◽  
W. R. Mitchell ◽  
C. L. Houck
Keyword(s):  
Thermal Decomposition ◽  
Magnesium Oxide ◽  
Basal Plane ◽  
Magnesium Ions ◽  
A Value ◽  
Reaction Proceeds

Natural Brucite (Mg(OH)2) decomposes on heating to form magnesium oxide (MgO) having its cubic ﹛110﹜ and ﹛111﹜ planes respectively parallel to the prism and basal planes of the hexagonal brucite lattice. Although the crystal-lographic relation between the parent brucite crystal and the resulting mag-nesium oxide crystallites is well known, the exact mechanism by which the reaction proceeds is still a matter of controversy. Goodman described the decomposition as an initial shrinkage in the brucite basal plane allowing magnesium ions to shift their original sites to the required magnesium oxide positions followed by a collapse of the planes along the original <0001> direction of the brucite crystal. He noted that the (110) diffraction spots of brucite immediately shifted to the positions required for the (220) reflections of magnesium oxide. Gordon observed separate diffraction spots for the (110) brucite and (220) magnesium oxide planes. The positions of the (110) and (100) brucite never changed but only diminished in intensity while the (220) planes of magnesium shifted from a value larger than the listed ASTM d spacing to the predicted value as the decomposition progressed.

Zone-axis ALCHEMI for the rapid assessment of site occupancies in garnets

1986 ◽  
Vol 44 ◽  
pp. 706-707
Author(s):  
M.T. Otten ◽  
P.R. Buseck
Keyword(s):  
Single Crystals ◽  
Rapid Assessment ◽  
Site Occupancy ◽  
Zone Axis ◽  
Synthetic Compounds ◽  
X Ray ◽  
Large Group ◽  
Crystallographic Planes

ALCHEMI (Atom Location by CHannelling-Enhanced Microanalysis) is a TEM technique for determining site occupancies in single crystals. The method uses the channelling of incident electrons along specific crystallographic planes. This channelling results in enhanced x-ray emission from the atoms on those planes, thereby providing the required site-occupancy information. ALCHEMI has been applied with success to spinel, olivine and feldspar. For the garnets, which form a large group of important minerals and synthetic compounds, the channelling effect is weaker, and significant results are more difficult to obtain. It was found, however, that the channelling effect is pronounced for low-index zone-axis orientations, yielding a method for assessing site occupancies that is rapid and easy to perform.

The stability of dislocation networks under various oxygen-doping conditions in superconducting Bi2Sr2CaCu2Oy single crystals and their influence on the flux pinning properties

1994 ◽  
Vol 52 ◽  
pp. 802-803
Author(s):  
Y. Feng ◽  
X. Y. Cai ◽  
R. J. Kelley ◽  
D. C. Larbalestier
Keyword(s):  
Single Crystals ◽  
Oxygen Content ◽  
Basal Plane ◽  
Flux Pinning ◽  
Pinning Centers ◽  
Before And After ◽  
Anomalous Peak ◽  
Basal Plane Dislocation ◽  
The Stability ◽  
Further Development

The issue of strong flux pinning is crucial to the further development of high critical current density Bi-Sr-Ca-Cu-O (BSCCO) superconductors in conductor-like applications, yet the pinning mechanisms are still much debated. Anomalous peaks in the M-H (magnetization vs. magnetic field) loops are commonly observed in Bi2Sr2CaCu2Oy (Bi-2212) single crystals. Oxygen vacancies may be effective flux pinning centers in BSCCO, as has been found in YBCO. However, it has also been proposed that basal-plane dislocation networks also act as effective pinning centers. Yang et al. proposed that the characteristic scale of the basal-plane dislocation networksmay strongly depend on oxygen content and the anomalous peak in the M-H loop at ˜20-30K may be due tothe flux pinning of decoupled two-dimensional pancake vortices by the dislocation networks. In light of this, we have performed an insitu observation on the dislocation networks precisely at the same region before and after annealing in air, vacuumand oxygen, in order to verify whether the dislocation networks change with varying oxygen content Inall cases, we have not found any noticeable changes in dislocation structure, regardless of the drastic changes in Tc and the anomalous magnetization. Therefore, it does not appear that the anomalous peak in the M-H loops is controlled by the basal-plane dislocation networks.

On the Faceting of Polar Ceramic Surfaces: Microscopy and Holography Studies of MGO(111) Surfaces

1996 ◽  
Vol 54 ◽  
pp. 366-367
Author(s):  
M. Gajdardziska-Josifovska ◽  
B. G. Frost ◽  
E. Völkl ◽  
L. F. Allard
Keyword(s):  
Electron Microscopy ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Electron Holography ◽  
Flat Surfaces ◽  
Transmission Electron ◽  
Excess Surface ◽  
Polar Surfaces ◽  
Salt Structure ◽  
Crystallographic Planes

Polar surfaces are those crystallographic faces of ionically bonded solids which, when bulk terminated, have excess surface charge and a non-zero dipole moment perpendicular to the surface. In the case of crystals with a rock salt structure, {111} faces are the exemplary polar surfaces. It is commonly believed that such polar surfaces facet into neutral crystallographic planes to minimize their surface energy. This assumption is based on the seminal work of Henrich which has shown faceting of the MgO(111) surface into {100} planes giving rise to three sided pyramids that have been observed by scanning electron microscopy. These surfaces had been prepared by mechanical polishing and phosphoric acid etching, followed by Ar+ sputtering and 1400 K annealing in ultra-high vacuum (UHV). More recent reflection electron microscopy studies of MgO(111) surfaces, annealed in the presence of oxygen at higher temperatures, have revealed relatively flat surfaces stabilized by an oxygen rich reconstruction. In this work we employ a combination of optical microscopy, transmission electron microscopy, and electron holography to further study the issue of surface faceting.

Is Red Really Romantic?

2017 ◽  
Vol 48 (3) ◽  
pp. 174-183 ◽  
Author(s):  
Gabrielle K. Lehmann ◽  
Robert J. Calin-Jageman
Keyword(s):  
Opposite Direction ◽  
Positive Control ◽  
Weak Effect ◽  
Sample Sizes ◽  
Quality Controls

Abstract. Red has been reported to enhance attraction for women rating men ( Elliot et al., 2010 ) and men rating women ( Elliot & Niesta, 2008 ). We replicated one of these studies online and in-person. To ensure rigor, we obtained original materials, planned for informative sample sizes, pre-registered our study, used a positive control, and adopted quality controls. For men, we found a very weak effect in the predicted direction (d = 0.09, 95% CI [−0.17, 0.34], N = 242). For women, we found a very weak effect in the opposite direction (d = −0.09, 95% CI [−0.30, 0.12], N = 360). The original studies may have overestimated the red effect, our studies may be an underestimate, or there could be strong moderation of the effect of red on attraction.

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