scholarly journals Restorative effect of oxygen annealing on device performance in HfIZO thin-film transistors

AIP Advances ◽  
2015 ◽  
Vol 5 (3) ◽  
pp. 037136
Author(s):  
Tae-Jun Ha
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Device Performance ◽  
Oxygen Annealing ◽  
Effect Of Oxygen

Effect of oxygen plasma on the surface states of ZnO films used to produce thin-film transistors on soft plastic sheets

2013 ◽  
Vol 1 (40) ◽  
pp. 6613 ◽  
Author(s):  
Jagan Singh Meena ◽  
Min-Ching Chu ◽  
Yu-Cheng Chang ◽  
Hsin-Chiang You ◽  
Ranjodh Singh ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Oxygen Plasma ◽  
Surface States ◽  
Zno Films ◽  
Effect Of Oxygen

Origin of Device Performance Degradation in InGaZnO Thin-Film Transistors after Crystallization

2012 ◽  
Vol 51 (1R) ◽  
pp. 015601 ◽  
Author(s):  
Byung Du Ahn ◽  
Hyun Soo Shin ◽  
Dong Lim Kim ◽  
Seung Min Lee ◽  
Jin-Seong Park ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Performance Degradation ◽  
Device Performance

Effect of NH3 plasma treatment on the device performance of ZnO based thin film transistors

Vacuum ◽  
2011 ◽  
Vol 85 (9) ◽  
pp. 904-907 ◽  
Author(s):  
R. Navamathavan ◽  
R. Nirmala ◽  
Cheul Ro Lee
Keyword(s):  
Thin Film ◽  
Plasma Treatment ◽  
Thin Film Transistors ◽  
Device Performance

Origin of Device Performance Degradation in InGaZnO Thin-Film Transistors after Crystallization

2011 ◽  
Vol 51 (1) ◽  
pp. 015601 ◽  
Author(s):  
Byung Du Ahn ◽  
Hyun Soo Shin ◽  
Dong Lim Kim ◽  
Seung Min Lee ◽  
Jin-Seong Park ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Performance Degradation ◽  
Device Performance

Up-scaling of the manufacturing of all-inkjet-printed organic thin-film transistors: Device performance and manufacturing yield of transistor arrays

2016 ◽  
Vol 30 ◽  
pp. 237-246 ◽  
Author(s):  
Enrico Sowade ◽  
Kalyan Yoti Mitra ◽  
Eloi Ramon ◽  
Carme Martinez-Domingo ◽  
Fulvia Villani ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Device Performance ◽  
Organic Thin Film ◽  
Manufacturing Yield ◽  
Up Scaling

Effect of dielectric/organic interface properties on the performance of the organic thin film transistors

2013 ◽  
Vol 1501 ◽  
Author(s):  
Ronak Rahimi ◽  
D. Korakakis
Keyword(s):  
Molecular Structure ◽  
Thin Film ◽  
Thin Film Transistors ◽  
Carrier Mobility ◽  
Charge Carrier Mobility ◽  
Organic Thin Film Transistors ◽  
Device Performance ◽  
Electrical Characteristics ◽  
Organic Thin Film ◽  
Organic Layers

ABSTRACTIn order to manufacture organic electronic devices with high performance, more detailed studies of the structure and the morphology of the organic materials as well as the underlying physical charge transport mechanisms are warranted. For instance, high efficiency organic thin film transistors (OTFTs) require materials with high charge carrier mobility [1, 2]. The parameters that determine the charge carrier mobility of the device include the structure of the first organic layer at the organic-dielectric interface as well as the morphology and the structural order of the other organic layers. Therefore, fundamental questions about structural properties of organic materials should be answered in order to optimize device performance [2-4].In this work, several bilayer structures of LiF/PTCDI-C8 and LiF/pentacene were prepared and their morphology and molecular structure were characterized using X-ray reflectivity (XRR) technique. In order to study the effects of the films’ structures and dielectric/organic interfacial properties on the device performance, OTFTs based on these bilayers were fabricated and characterized. It has been observed that PTCDI-C8 thin films have higher molecular packing in the LiF/PTCDI-C8 bilayer structure, which results in superior electrical characteristics for OTFTs based on this organic material. Devices with LiF/PTCDI-C8 bilayer exhibit about one order of magnitude higher output current (Ids) at a constant drain-source voltage (Vds) compared to the devices with LiF/pentacene bilayer. The observed differences in the electrical characteristics of these devices can be attributed to the effects of the dielectric/organic interface and the molecular structure of the organic layers.

Dependences of Structural Parameters on the Characteristics of Poly-Si Thin-Film Transistors after Plasma Passivation

2003 ◽  
Vol 762 ◽  
Author(s):  
Cheng-Ming Yu ◽  
Tiao-Yuan Huang ◽  
Tan-Fu Lei ◽  
Horng-Chih Lin
Keyword(s):  
Thin Film ◽  
Plasma Treatment ◽  
Detailed Analysis ◽  
Thin Film Transistors ◽  
Structural Parameters ◽  
Subthreshold Swing ◽  
Device Performance ◽  
Short Channel ◽  
Plasma Passivation ◽  
Si Thin Film

AbstractThe effects of NH3 and H2 plasma passivation on the characteristics of poly-Si thin-film transistors with source/drain extensions induced by a bottom sub-gate were studied. Our results show that significant improvements in device performance can be obtained by both passivation methods. Moreover, NH3-plasma-treatment appears to be more effective in reducing the off-state leakage, subthreshold swing, compared to H2 plasma passivation. NH3 plasma treatment is also found to be more effective in reducing the anomalous subthrehold hump phenomenon observed in non-plasma-treated short-channel devices. Detailed analysis suggests that all these improvements can be explained by the more effective passivation of the traps distributed in both the front and back sides of the channel by NH3 plasma treatment.

scholarly journals Foundry-compatible high-resolution patterning of vertically phase-separated semiconducting films for ultraflexible organic electronics

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Binghao Wang ◽  
Wei Huang ◽  
Sunghoon Lee ◽  
Lizhen Huang ◽  
Zhi Wang ◽  
...  
Keyword(s):  
Thin Film ◽  
High Resolution ◽  
Thin Film Transistors ◽  
Semiconducting Polymers ◽  
Environmentally Benign ◽  
Device Performance ◽  
Solvent Exposure ◽  
Semiconducting Polymer ◽  
Polymer Semiconductors ◽  
Benign Solvents

AbstractSolution processability of polymer semiconductors becomes an unfavorable factor during the fabrication of pixelated films since the underlying layer is vulnerable to subsequent solvent exposure. A foundry-compatible patterning process must meet requirements including high-throughput and high-resolution patternability, broad generality, ambient processability, environmentally benign solvents, and, minimal device performance degradation. However, known methodologies can only meet very few of these requirements. Here, a facile photolithographic approach is demonstrated for foundry-compatible high-resolution patterning of known p- and n-type semiconducting polymers. This process involves crosslinking a vertically phase-separated blend of the semiconducting polymer and a UV photocurable additive, and enables ambient processable photopatterning at resolutions as high as 0.5 μm in only three steps with environmentally benign solvents. The patterned semiconducting films can be integrated into thin-film transistors having excellent transport characteristics, low off-currents, and high thermal (up to 175 °C) and chemical (24 h immersion in chloroform) stability. Moreover, these patterned organic structures can also be integrated on 1.5 μm-thick parylene substrates to yield highly flexible (1 mm radius) and mechanically robust (5,000 bending cycles) thin-film transistors.

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