Practical photomask pinhole defect repair using micrometer scale pattern Cd CVD with kHz repetition UV light pulses

1985 ◽  
Author(s):  
Y. MORISHIGE ◽  
H. YOKOYAMA ◽  
S. KISHIDA ◽  
K. WASHIO ◽  
H. KINOSHITA ◽  
...  
2019 ◽  
Vol 61 (10) ◽  
pp. 1852
Author(s):  
Л.И. Брюквина

The effect of UV light and light pulses of the integral light of lamps on γ-irradiated LiF crystals with impurities of hydroxyl ions and magnesium were investigated. The optical absorption and luminescence of color centers at different stages bleaching depending on the exposure time of the crystal under UV light or from the number of light pulses were studied. IR spectra of molecular complexes with hydrogen bond and hydroxyl ions at different stages of bleaching are present. The transformation of complexes with a strong hydrogen bond in complexes with a weak hydrogen bond, and vice versa under the action of light are shown. It is presented as molecular complexes with hydrogen bond affect transformations color centers in the process of crystal bleaching.


Nanomaterials ◽  
2019 ◽  
Vol 9 (5) ◽  
pp. 799 ◽  
Author(s):  
Youngmin Lee ◽  
Deuk Young Kim ◽  
Sejoon Lee

The low-power, high-performance graphene/ZnO Schottky photodiodes were demonstrated through the direct sputter-growth of ZnO onto the thermally-cleaned graphene/SiO2/Si substrate at room temperature. Prior to the growth of ZnO, a thermal treatment of the graphene surface was performed at 280 °C for 10 min in a vacuum to desorb chemical residues that may serve as trap sites at the interface between graphene and ZnO. The device clearly showed a rectifying behavior with the Schottky barrier of ≈0.61 eV and an ideality factor of 1.16. Under UV illumination, the device exhibited the excellent photoresponse characteristics in both forward and reverse bias regions. When illuminating UV light with the optical power density of 0.62 mW/cm2, the device revealed a high on/off current ratio of >103 even at a low bias voltage of 0.1 V. For the transient characteristics upon switching of UV light pulses, the device represented a fast and stable photoresponse (i.e., rise time: 0.16 s, decay time: 0.19 s). From the temperature-dependent current–voltage characteristics, such an outstanding photoresponse characteristic was found to arise from the enhanced Schottky barrier homogeneity via the thermal treatment of the graphene surface. The results suggest that the ZnO/graphene Schottky diode holds promise for the application in high-performance low-power UV photodetectors.


1992 ◽  
Vol 46 (3) ◽  
pp. 458-463 ◽  
Author(s):  
Tsutomu Araki ◽  
Nobuhiro Hanabusa ◽  
Teruo Uchida ◽  
Xue F. Wang ◽  
Shigeo Minami

We describe the construction and emission characteristics of a gap-adjustable, capacitor-replaceable pulsed light source (air-discharge type) that produces high-repetition pulsed UV light of nanosecond duration. Stable light pulses of 0.8 to 3.5 ns width are generated from atmospheric-pressure air discharge between the sharp anode and round cathode. Appreciable heterogeneities on the distribution of emission intensity and its on-set timing along the discharge gap were observed. Fluorescence lifetimes of ethidium bromide solutions were measured to demonstrate the usefulness of the light source.


Micromachines ◽  
2019 ◽  
Vol 10 (8) ◽  
pp. 547
Author(s):  
Chun-Ying Wu ◽  
Heng Hsieh ◽  
Yung-Chun Lee

This paper proposes a method for improving the patterning resolution of conventional contact photolithography from the micrometer, down to the sub-micrometer scale. The key element is a soft polydimethylsiloxane (PDMS) photomask, which is first replicated from a silicon mold and then patterned with a black photoresist (PR) layer to selectively block ultraviolet (UV) light. This soft PDMS photomask can easily form an intimate and conformable contact with a PR-coated substrate and hence can perform contact photolithography with high pattern resolution. The fabrication processes of this black-PR/PDMS soft photomask are experimentally carried out. Using the fabricated soft photomask, UV patterning by contact photolithography with the smallest line-width of 170 nm over a 4” wafer area was successfully achieved. The advantages and potentials of this new type of contact photolithography will be addressed.


1999 ◽  
Author(s):  
Dmitry Y. Sugak ◽  
A. N. Durygin ◽  
Andrej O. Matkovskii ◽  
Andrzej Suchocki ◽  
D. Savitskii ◽  
...  
Keyword(s):  
Uv Light ◽  

Author(s):  
Debby A. Jennings ◽  
Michael J. Morykwas ◽  
Louis C. Argenta

Grafts of cultured allogenic or autogenic keratlnocytes have proven to be an effective treatment of chronic wounds and burns. This study utilized a collagen substrate for keratinocyte and fibroblast attachment. The substrate provided mechanical stability and augmented graft manipulation onto the wound bed. Graft integrity was confirmed by light and transmission electron microscopy.Bovine Type I dermal collagen sheets (100 μm thick) were crosslinked with 254 nm UV light (13.5 Joules/cm2) to improve mechanical properties and reduce degradation. A single cell suspension of third passage neonatal foreskin fibroblasts were plated onto the collagen. Five days later, a single cell suspension of first passage neonatal foreskin keratinocytes were plated on the opposite side of the collagen. The grafts were cultured for one month.The grafts were fixed in phosphate buffered 4% formaldehyde/1% glutaraldehyde for 24 hours. Graft pieces were then washed in 0.13 M phosphate buffer, post-fixed in 1% osmium tetroxide, dehydrated, and embedded in Polybed 812.


Author(s):  
W. Engel ◽  
M. Kordesch ◽  
A. M. Bradshaw ◽  
E. Zeitler

Photoelectron microscopy is as old as electron microscopy itself. Electrons liberated from the object surface by photons are utilized to form an image that is a map of the object's emissivity. This physical property is a function of many parameters, some depending on the physical features of the objects and others on the conditions of the instrument rendering the image.The electron-optical situation is tricky, since the lateral resolution increases with the electric field strength at the object's surface. This, in turn, leads to small distances between the electrodes, restricting the photon flux that should be high for the sake of resolution.The electron-optical development came to fruition in the sixties. Figure 1a shows a typical photoelectron image of a polycrystalline tantalum sample irradiated by the UV light of a high-pressure mercury lamp.


Author(s):  
Ś Lhoták ◽  
I. Alexopoulou ◽  
G. T. Simon

Various kidney diseases are characterized by the presence of dense deposits in the glomeruli. The type(s) of immunoglobulins (Igs) present in the dense deposits are characteristic of the disease. The accurate Identification of the deposits is therefore of utmost diagnostic and prognostic importance. Immunofluorescence (IF) used routinely at the light microscopical level is unable to detect and characterize small deposits found in early stages of glomerulonephritis. Although conventional TEM is able to localize such deposits, it is not capable of determining their nature. It was therefore attempted to immunolabel at EM level IgG, IgA IgM, C3, fibrinogen and kappa and lambda Ig light chains commonly found in glomerular deposits on routinely fixed ( 2% glutaraldehyde (GA) in 0.1M cacodylate buffer) kidney biopsies.The unosmicated tissue was embedded in LR White resin polymerized by UV light at -10°C. A postembedding immunogold technique was employed


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