3-6 µm dispersive mirrors compensating the dispersion introduced by the GaAs crystal

2021 ◽  
Author(s):  
Yu Chen ◽  
Daniel Hahner ◽  
Vladimir Pervak
Keyword(s):  
Gaas Crystal

Study of dislocation loops in Arsenic-Rich as-grown GaAs

1987 ◽  
Vol 45 ◽  
pp. 350-351
Author(s):  
Byung-Teak Lee
Keyword(s):  
Point Defects ◽  
Electronic Devices ◽  
Arsenic Concentration ◽  
Stoichiometric Compound ◽  
Dislocation Loops ◽  
Gaas Crystal ◽  
Ion Milling ◽  
Transmission Electron ◽  
Arsenic Source ◽  
High Arsenic

Grown-in dislocations in GaAs have been a major obstacle in utilizing this material for the potential electronic devices. Although it has been proposed in many reports that supersaturation of point defects can generate dislocation loops in growing crystals and can be a main formation mechanism of grown-in dislocations, there are very few reports on either the observation or the structural analysis of the stoichiometry-generated loops. In this work, dislocation loops in an arsenic-rich GaAs crystal have been studied by transmission electron microscopy.The single crystal with high arsenic concentration was grown using the Horizontal Bridgman method. The arsenic source temperature during the crystal growth was about 630°C whereas 617±1°C is normally believed to be optimum one to grow a stoichiometric compound. Samples with various orientations were prepared either by chemical thinning or ion milling and examined in both a JEOL JEM 200CX and a Siemens Elmiskop 102.

Femtosecond pulse evolution in GaAs crystal

2000 ◽  
Vol 87 (3) ◽  
pp. 1049-1053 ◽  
Author(s):  
J. Kumar ◽  
Pratima Sen
Keyword(s):  
Femtosecond Pulse ◽  
Gaas Crystal

Boron- and stoichiometry-related defect engineering during B2O3-free GaAs crystal growth

2009 ◽  
Vol 6 (12) ◽  
pp. 2778-2784 ◽  
Author(s):  
F.-M. Kiessling ◽  
M. Albrecht ◽  
K. Irmscher ◽  
M. Roßberg ◽  
P. Rudolph ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Gaas Crystal ◽  
Defect Engineering ◽  
Related Defect

Growth of Si and in double-doped dislocation-free conductive GaAs crystal by the LEC technique

1986 ◽  
Vol 4 (4) ◽  
pp. 189-193 ◽  
Author(s):  
Takashi Fujii ◽  
Masato Nakajima ◽  
Tsuguo Fukuda
Keyword(s):  
Gaas Crystal

Mechanical Property Evaluation of GaAs Crystal for Solar Cells

2011 ◽  
Vol 28 (8) ◽  
pp. 086101 ◽  
Author(s):  
Min Jin ◽  
Yong-Zheng Fang ◽  
Hui Shen ◽  
Guo-Jian Jiang ◽  
Zhan-Yong Wang ◽  
...  
Keyword(s):  
Mechanical Property ◽  
Solar Cells ◽  
Gaas Crystal ◽  
Property Evaluation

Effect of silicon on the elastic–plastic transition of GaAs crystal

2015 ◽  
Vol 102 ◽  
pp. 31-34 ◽  
Author(s):  
D. Chrobak ◽  
J. Räisänen ◽  
R. Nowak
Keyword(s):  
Gaas Crystal ◽  
Elastic Plastic
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