Effect of silicon on the elastic–plastic transition of GaAs crystal

2015 ◽  
Vol 102 ◽  
pp. 31-34 ◽  
Author(s):  
D. Chrobak ◽  
J. Räisänen ◽  
R. Nowak
Keyword(s):  
Gaas Crystal ◽  
Elastic Plastic

scholarly journals Origin of Nanoscale Incipient Plasticity in GaAs and InP Crystal

Crystals ◽  
2019 ◽  
Vol 9 (12) ◽  
pp. 651
Author(s):  
Dariusz Chrobak ◽  
Michał Trębala ◽  
Artur Chrobak ◽  
Roman Nowak
Keyword(s):  
Plastic Deformation ◽  
Phase Transformation ◽  
Contact Pressure ◽  
Electrical Current ◽  
Gaas Crystal ◽  
Elastic Plastic ◽  
Si Doping ◽  
Mechanical Measurements ◽  
Significant Difference ◽  
Incipient Plasticity

In this article, we exhibit the influence of doping on nanoindentation-induced incipient plasticity in GaAs and InP crystals. Nanoindentation experiments carried out on a GaAs crystal show a reduction in contact pressure at the beginning of the plastic deformation caused by an increase in Si doping. Given that the substitutional Si defects cause a decrease in the pressure of the GaAs-I → GaAs-II phase transformation, we concluded that the elastic–plastic transition in GaAs is a phase-change-driven phenomenon. In contrast, Zn- and S-doping of InP crystals cause an increase in contact pressure at the elastic–plastic transition, revealing its dislocation origin. Our mechanical measurements were supplemented by nanoECR experiments, which showed a significant difference in the flow of the electrical current at the onset of plastic deformation of the semiconductors under consideration.

Study of dislocation loops in Arsenic-Rich as-grown GaAs

1987 ◽  
Vol 45 ◽  
pp. 350-351
Author(s):  
Byung-Teak Lee
Keyword(s):  
Point Defects ◽  
Electronic Devices ◽  
Arsenic Concentration ◽  
Stoichiometric Compound ◽  
Dislocation Loops ◽  
Gaas Crystal ◽  
Ion Milling ◽  
Transmission Electron ◽  
Arsenic Source ◽  
High Arsenic

Grown-in dislocations in GaAs have been a major obstacle in utilizing this material for the potential electronic devices. Although it has been proposed in many reports that supersaturation of point defects can generate dislocation loops in growing crystals and can be a main formation mechanism of grown-in dislocations, there are very few reports on either the observation or the structural analysis of the stoichiometry-generated loops. In this work, dislocation loops in an arsenic-rich GaAs crystal have been studied by transmission electron microscopy.The single crystal with high arsenic concentration was grown using the Horizontal Bridgman method. The arsenic source temperature during the crystal growth was about 630°C whereas 617±1°C is normally believed to be optimum one to grow a stoichiometric compound. Samples with various orientations were prepared either by chemical thinning or ion milling and examined in both a JEOL JEM 200CX and a Siemens Elmiskop 102.

Elasto-plastic state of curve beam system subjected to complex loading

1996 ◽  
Vol 18 (4) ◽  
pp. 14-22
Author(s):  
Vu Khac Bay
Keyword(s):  
Cylindrical Shell ◽  
Solution Method ◽  
Complex Loading ◽  
Numerical Results ◽  
Elastic Solution ◽  
Plastic State ◽  
Curve Beam ◽  
Elastic State ◽  
Elastic Plastic ◽  
Beam System

Investigation of the elastic state of curve beam system had been considered in [3]. In this paper the elastic-plastic state of curve beam system in the form of cylindrical shell is analyzed by the elastic solution method. Numerical results of the problem and conclusion are given.

Elastic-plastic behavior of coldworked holes

1983 ◽  
Author(s):  
H. ARMEN ◽  
A. LEVY ◽  
H. EIDINOFF
Keyword(s):  
Plastic Behavior ◽  
Elastic Plastic
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