Real-time reflectance anisotropy spectroscopy of GaAs homoepitaxy

2020 ◽  
Vol 59 (13) ◽  
pp. D39 ◽  
Author(s):  
A. Lastras-Martínez ◽  
L. E. Guevara-Macías ◽  
J. G. Santiago-García ◽  
J. Ortega-Gallegos ◽  
I. A. Ruiz-Alvarado ◽  
...  
Keyword(s):  
Real Time ◽  
Reflectance Anisotropy

Real-Time Reflectance Anisotropy Spectroscopy of MBE AlAs/GaAs Interfaces

2014 ◽  
Author(s):  
L. E. Tapia-Rodríguez ◽  
A. Lastras-Martínez ◽  
L. F Lastras-Martínez ◽  
R. E. Balderas-Navarro ◽  
J. Ortega-Gallegos ◽  
...  
Keyword(s):  
Real Time ◽  
Reflectance Anisotropy

Real time detection of the epitaxial growth of oligothiophene layers by reflectance anisotropy spectroscopy

2007 ◽  
Vol 601 (18) ◽  
pp. 4488-4491 ◽  
Author(s):  
G. Bussetti ◽  
C. Goletti ◽  
P. Chiaradia ◽  
A. Sassella ◽  
M. Campione ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Real Time ◽  
Reflectance Anisotropy ◽  
Real Time Detection

MOVPE growth of (Al, Ga)InP-based laser structures monitored by real-time reflectance anisotropy spectroscopy

2000 ◽  
Vol 29 (1) ◽  
pp. 94-98 ◽  
Author(s):  
K. Haberland ◽  
A. Bhattacharya ◽  
M. Zorn ◽  
M. Weyers ◽  
J. -T. Zettler ◽  
...  
Keyword(s):  
Real Time ◽  
Reflectance Anisotropy ◽  
Movpe Growth

Real-time monitoring of MOVPE device growth by reflectance anisotropy spectroscopy and related optical techniques

1998 ◽  
Vol 195 (1-4) ◽  
pp. 151-162 ◽  
Author(s):  
J.-T. Zettler ◽  
K. Haberland ◽  
M. Zorn ◽  
M. Pristovsek ◽  
W. Richter ◽  
...  
Keyword(s):  
Real Time ◽  
Real Time Monitoring ◽  
Optical Techniques ◽  
Reflectance Anisotropy

Reflectance anisotropy spectrometer for real-time crystal growth investigations

1991 ◽  
Author(s):  
O. Acher ◽  
Ramdane Benferhat ◽  
Bernard Drevillon ◽  
Manijeh Razeghi
Keyword(s):  
Crystal Growth ◽  
Real Time ◽  
Reflectance Anisotropy

Real-time control of quantum dot laser growth using reflectance anisotropy spectroscopy

2004 ◽  
Vol 272 (1-4) ◽  
pp. 143-147 ◽  
Author(s):  
U.W. Pohl ◽  
K. Pötschke ◽  
I. Kaiander ◽  
J.-T. Zettler ◽  
D. Bimberg
Keyword(s):  
Quantum Dot ◽  
Real Time ◽  
Real Time Control ◽  
Reflectance Anisotropy ◽  
Time Control ◽  
Quantum Dot Laser

Real-time growth monitoring of InGaAs/InP-HBT structures with reflectance anisotropy spectroscopy

1998 ◽  
Vol 313-314 ◽  
pp. 609-613 ◽  
Author(s):  
M. Arens ◽  
P. Kurpas ◽  
P. Ressel ◽  
M. Weyers
Keyword(s):  
Real Time ◽  
Growth Monitoring ◽  
Reflectance Anisotropy

A reflectance anisotropy spectrometer for real‐time measurements

1992 ◽  
Vol 63 (11) ◽  
pp. 5332-5339 ◽  
Author(s):  
O. Acher ◽  
B. Drévillon
Keyword(s):  
Real Time ◽  
Reflectance Anisotropy

Real Time Control of III-V Semiconductor Surfaces During Movpe Growth by Reflectance Anisotropy Spectroscopy

1993 ◽  
Vol 334 ◽  
Author(s):  
K. Ploska ◽  
W. Richter ◽  
F. Reinhardt ◽  
J. JÖnsson ◽  
J. Rumberg ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Real Time ◽  
Molecular Beam ◽  
Substrate Surface ◽  
Exchange Reactions ◽  
Real Time Control ◽  
Time Resolved ◽  
Reflectance Anisotropy ◽  
Time Control ◽  
Metalorganic Molecular Beam Epitaxy

AbstractReflectance anisotropy spectroscopy (RAS) is presented as real time analytical tool for metalorganic vapourphase epitaxy (MOVPE) of III-V-semiconductors. This optical method derives its surface sensitivity from the anisotropy of surface structures. It is shown that it is possible to monitor with RAS the oxide desorption from the substrate and that the substrate surface conditions thereafter, still in the pregrowth stage, can be correlated with certain reconstructions of the (001)-surfaces of InP and GaAs. The latter is possible through simultaneous RAS and RHEED measurements during MBE (molecular beam epitaxy) or MOMBE (metalorganic molecular beam epitaxy). Characteristic spectral features are also observed for other binary or ternary III-V-semiconductors. Time resolved measurements during growth give monolayer resolution for the growth rate in the case of GaAs. In the study of heterointerface growth exchange reactions between As and P together with their corresponding reaction time constants can be monitored and conclusions for the epitaxial growth procedure can be drawn.

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