Reflectance anisotropy spectrometer for real-time crystal growth investigations

1991 ◽  
Author(s):  
O. Acher ◽  
Ramdane Benferhat ◽  
Bernard Drevillon ◽  
Manijeh Razeghi
Keyword(s):  
Crystal Growth ◽  
Real Time ◽  
Reflectance Anisotropy

Real-Time Reflectance Anisotropy Spectroscopy of MBE AlAs/GaAs Interfaces

2014 ◽  
Author(s):  
L. E. Tapia-Rodríguez ◽  
A. Lastras-Martínez ◽  
L. F Lastras-Martínez ◽  
R. E. Balderas-Navarro ◽  
J. Ortega-Gallegos ◽  
...  
Keyword(s):  
Real Time ◽  
Reflectance Anisotropy

Optical Approaches to Real-Time Analysis and Control of Crystal Growth

1990 ◽  
Vol 198 ◽  
Author(s):  
D. E. Aspnes
Keyword(s):  
Chemical Vapor Deposition ◽  
Crystal Growth ◽  
Molecular Beam Epitaxy ◽  
Real Time ◽  
Vapor Deposition ◽  
Molecular Beam ◽  
Second Harmonic ◽  
Chemical Vapor ◽  
Optical Methods ◽  
Dielectric Anisotropy

ABSTRACTA variety of optical methods are now available for studying surface processes and for monitoring layer thicknesses and compositions during semiconductor crystal growth by molecular beam epitaxy (MBE), organometallic chemical vapor deposition (OMCVD), and related techniques. Spectroellipsometry (SE) and spectroreflectometry (SR), the older, primarily bulk-sensitive probes, are now augmented by new, primarily surface-sensitive probes such as reflectance-difference spectroscopy (RDS), second-harmonic generation (SHG), and laser light scattering (LLS). Examples of real-time growth studies now include SE determinations of thicknesses and compositions of AlxGa1–xAs layers on GaAs by organometallic molecular beam epitaxy (OMMBE) to 10 Å thickness scales, RDS determinations of surface dielectric anisotropy spectra of various (001) GaAs surfaces relevant to crystal growth by MBE, and LLS determinations of the evolution of surface roughness during chemical vapor deposition (CVD) growth on Si. Proven capabilities suggest new applications, particularly to growth-interrupted and metastable systems.

Real-Time X-Ray Topographic Observation of Crystal Growth of Gallium from Melt

1986 ◽  
Vol 25 (Part 1, No. 3) ◽  
pp. 345-350 ◽  
Author(s):  
Tatsumasa Kobayashi ◽  
Yoshitaka Nishikawa ◽  
Toru Imura
Keyword(s):  
Crystal Growth ◽  
Real Time ◽  
X Ray

Real time detection of the epitaxial growth of oligothiophene layers by reflectance anisotropy spectroscopy

2007 ◽  
Vol 601 (18) ◽  
pp. 4488-4491 ◽  
Author(s):  
G. Bussetti ◽  
C. Goletti ◽  
P. Chiaradia ◽  
A. Sassella ◽  
M. Campione ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Real Time ◽  
Reflectance Anisotropy ◽  
Real Time Detection
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