Optical properties of metallic films for vertical-cavity optoelectronic devices

1998 ◽  
Vol 37 (22) ◽  
pp. 5271 ◽  
Author(s):  
Aleksandar D. Rakić ◽  
Aleksandra B. Djurišić ◽  
Jovan M. Elazar ◽  
Marian L. Majewski
2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Animesh Pandey ◽  
Reena Yadav ◽  
Mandeep Kaur ◽  
Preetam Singh ◽  
Anurag Gupta ◽  
...  

AbstractTopological insulators (TIs) possess exciting nonlinear optical properties due to presence of metallic surface states with the Dirac fermions and are predicted as a promising material for broadspectral phodotection ranging from UV (ultraviolet) to deep IR (infrared) or terahertz range. The recent experimental reports demonstrating nonlinear optical properties are mostly carried out on non-flexible substrates and there is a huge demand for the fabrication of high performing flexible optoelectronic devices using new exotic materials due to their potential applications in wearable devices, communications, sensors, imaging etc. Here first time we integrate the thin films of TIs (Bi2Te3) with the flexible PET (polyethylene terephthalate) substrate and report the strong light absorption properties in these devices. Owing to small band gap material, evolving bulk and gapless surface state conduction, we observe high responsivity and detectivity at NIR (near infrared) wavelengths (39 A/W, 6.1 × 108 Jones for 1064 nm and 58 A/W, 6.1 × 108 Jones for 1550 nm). TIs based flexible devices show that photocurrent is linearly dependent on the incident laser power and applied bias voltage. Devices also show very fast response and decay times. Thus we believe that the superior optoelectronic properties reported here pave the way for making TIs based flexible optoelectronic devices.


Micromachines ◽  
2018 ◽  
Vol 9 (7) ◽  
pp. 350 ◽  
Author(s):  
Dong Shin ◽  
Suk-Ho Choi

Graphene transparent conductive electrodes are highly attractive for photodetector (PD) applications due to their excellent electrical and optical properties. The emergence of graphene/semiconductor hybrid heterostructures provides a platform useful for fabricating high-performance optoelectronic devices, thereby overcoming the inherent limitations of graphene. Here, we review the studies of PDs based on graphene/semiconductor hybrid heterostructures, including device physics/design, performance, and process technologies for the optimization of PDs. In the last section, existing technologies and future challenges for PD applications of graphene/semiconductor hybrid heterostructures are discussed.


2001 ◽  
Vol 16 (8) ◽  
pp. 2196-2199 ◽  
Author(s):  
H. Y. Lee ◽  
T. W. Kang ◽  
T. W. Kim

Photoluminescence (PL) measurements were performed on p-Cd0.96Zn0.04Te single crystals to investigate the dependence of the excitons on temperature. The activation energies and the longitudinal acoustic parameters of the excitons were determined from the temperature dependence of the PL spectra and were in reasonable agreement with the theoretical calculations. These results can help improve understanding for the application of p-CdxZn1–xTe single crystals in optoelectronic devices.


2002 ◽  
Vol 49 (14-15) ◽  
pp. 2423-2435 ◽  
Author(s):  
Katyayani Seal ◽  
Mark A. Nelson ◽  
Z. Charles Ying ◽  
Dentcho A. Genov ◽  
Andrey K. Sarychev ◽  
...  

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