Light-induced refractive-index modifications in dielectric thin films: experimental determination of relaxation time and amplitude

1996 ◽  
Vol 35 (25) ◽  
pp. 5013 ◽  
Author(s):  
S. Monneret ◽  
S. Tisserand ◽  
F. Flory ◽  
H. Rigneault
Keyword(s):  
Thin Films ◽  
Refractive Index ◽  
Relaxation Time ◽  
Experimental Determination ◽  
Dielectric Thin Films

scholarly journals Experimental Determination of Complex Optical Constants of Air‐Stable Inorganic CsPbI 3 Perovskite Thin Films

2020 ◽  
Vol 14 (6) ◽  
pp. 2000070 ◽  
Author(s):  
Wensheng Yan ◽  
Yi Guo ◽  
Deski Beri ◽  
Stephan Dottermusch ◽  
Haining Chen ◽  
...  
Keyword(s):  
Thin Films ◽  
Experimental Determination ◽  
Optical Constants

Experimental determination of the upper critical field of epitaxially grown thin films of YBa2Cu3O7−δdown to He temperature

1991 ◽  
Vol 70 (4) ◽  
pp. 2230-2233 ◽  
Author(s):  
R. Wördenweber ◽  
M. O. Abd‐El‐Hamed ◽  
J. Schneider ◽  
O. Laborde
Keyword(s):  
Thin Films ◽  
Experimental Determination ◽  
Critical Field ◽  
Upper Critical Field

Preparation and Character Measurements of AlN Films for RF Magnetron Sputtering

2013 ◽  
Vol 663 ◽  
pp. 409-412
Author(s):  
Tai Long Gui ◽  
Si Da Jiang ◽  
Chun Cheng Ban ◽  
Jia Qing Liu
Keyword(s):  
Crystal Structure ◽  
Thin Films ◽  
Refractive Index ◽  
Magnetron Sputtering ◽  
Total Pressure ◽  
Rf Magnetron Sputtering ◽  
Elliptical Polarization ◽  
Dielectric Thin Films ◽  
Temperature Changes ◽  
Sputtering Power

AlN dielectric thin films were deposited on N type Si(100) substrate by reactive radio frequency magnetron sputtering that directly bombardment AlN target under different sputtering-power and total pressure. The crystal structure,composition,surface and refractive index of the thin films were studied by XRD, SEM, AFM and elliptical polarization instrument. The results show that the surface and refractive of the thin films strongly depends on the sputtering-power and total pressure,the good uniformity and smoothness is found at 230 W, Ar flow ratio 5.0 LAr/sccm, substrate temperature 100°Cand 1.2 Pa. The crystal structure of the as-deposited thin-films is amorphous，then it transforms from blende structure to wurtzite structure as the rapid thermal annealing(RTA) temperature changes from 600 to 1200°C. The refractive index also increases with the RTA temperature it is increasing significantly from 800 to 1000°C．

scholarly journals Determination of refractive index and layer thickness of nm-thin films via ellipsometry

2017 ◽  
Vol 25 (22) ◽  
pp. 27077 ◽  
Author(s):  
Peter Nestler ◽  
Christiane A. Helm
Keyword(s):  
Thin Films ◽  
Refractive Index ◽  
Layer Thickness
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