Highly efficient coupling semiconductor spot-size converter with an InP/InAlAs multiple-quantum-well core

1995 ◽  
Vol 34 (6) ◽  
pp. 1007 ◽  
Author(s):  
Naoto Yoshimoto ◽  
Kenji Kawano ◽  
Hiroaki Takeuchi ◽  
Susumu Kondo ◽  
Yoshio Noguchi
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Spot Size ◽  
Multiple Quantum ◽  
Highly Efficient ◽  
Efficient Coupling

InGaAlAs/InAlAs multiple quantum well phase modulator integrated with spot size conversion structure

1994 ◽  
Vol 6 (2) ◽  
pp. 208-210 ◽  
Author(s):  
N. Yoshimoto ◽  
K. Kawano ◽  
Y. Hasumi ◽  
H. Takeuchi ◽  
S. Kondo ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Spot Size ◽  
Phase Modulator ◽  
Multiple Quantum

Highly efficient CdS-quantum-dot-sensitized InGaN multiple quantum well solar cells

2012 ◽  
Author(s):  
Yu Lin Tsai ◽  
Hsin-Chu Chen ◽  
Chien-Chung Lin ◽  
Hau-Vei Han ◽  
Peichen Yu ◽  
...  
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Highly Efficient ◽  
Cds Quantum Dot

Highly efficient CdS-quantum-dot-sensitized InGaN multiple quantum well solar cells

2012 ◽  
Author(s):  
Yu Lin Tsai ◽  
Hsin Chu Chen ◽  
Lin Chien-Chung ◽  
Hau-Vei Han ◽  
Peichen Yu ◽  
...  
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Highly Efficient ◽  
Cds Quantum Dot

RESONANT TUNNELING STUDIES OF VARIABLY SPACED MULTIPLE QUANTUM WELL STRUCTURES IN THE AlGaAs SYSTEM

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-457-C5-461
Author(s):  
C. J. SUMMERS ◽  
K. F. BRENNAN ◽  
A. TORABI ◽  
H. M. HARRIS ◽  
J. COMAS
Keyword(s):  
Quantum Well ◽  
Resonant Tunneling ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Structures

Low-Temperature Operation of Green, Blue and UV InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes

2003 ◽  
Vol 764 ◽  
Author(s):  
X. A. Cao ◽  
S. F. LeBoeuf ◽  
J. L. Garrett ◽  
A. Ebong ◽  
L. B. Rowland ◽  
...  
Keyword(s):  
Quantum Well ◽  
Light Emitting Diodes ◽  
Multiple Quantum Well ◽  
Light Output ◽  
Localized States ◽  
Multiple Quantum ◽  
Nonradiative Recombination ◽  
Light Emitting ◽  
Temperature Range ◽  
Green Leds

Absract:Temperature-dependent electroluminescence (EL) of InGaN/GaN multiple-quantum-well light-emitting diodes (LEDs) with peak emission energies ranging from 2.3 eV (green) to 3.3 eV (UV) has been studied over a wide temperature range (5-300 K). As the temperature is decreased from 300 K to 150 K, the EL intensity increases in all devices due to reduced nonradiative recombination and improved carrier confinement. However, LED operation at lower temperatures (150-5 K) is a strong function of In ratio in the active layer. For the green LEDs, emission intensity increases monotonically in the whole temperature range, while for the blue and UV LEDs, a remarkable decrease of the light output was observed, accompanied by a large redshift of the peak energy. The discrepancy can be attributed to various amounts of localization states caused by In composition fluctuation in the QW active regions. Based on a rate equation analysis, we find that the densities of the localized states in the green LEDs are more than two orders of magnitude higher than that in the UV LED. The large number of localized states in the green LEDs are crucial to maintain high-efficiency carrier capture at low temperatures.

High-Temperature High-Frequency Operation of Single and Multiple Quantum Well InGaAs Semiconductor Lasers

2000 ◽  
Author(s):  
William J. Siskaninetz ◽  
Hank D. Jackson ◽  
James E. Ehret ◽  
Jeffrey C. Wiemeri ◽  
John P. Loehr
Keyword(s):  
High Temperature ◽  
Quantum Well ◽  
Semiconductor Lasers ◽  
High Frequency ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
High Frequency Operation
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