Realization of Highly Efficient InGaN Green LEDs with Sandwich-like Multiple Quantum Well Structure: Role of Enhanced Interwell Carrier Transport

ACS Photonics ◽  
2018 ◽  
Vol 6 (1) ◽  
pp. 130-138 ◽  
Author(s):  
Quanjiang Lv ◽  
Junlin Liu ◽  
Chunlan Mo ◽  
Jianli Zhang ◽  
Xiaoming Wu ◽  
...  
Keyword(s):  
Quantum Well ◽  
Carrier Transport ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Highly Efficient ◽  
Quantum Well Structure ◽  
Green Leds

Low-Temperature Operation of Green, Blue and UV InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes

2003 ◽  
Vol 764 ◽  
Author(s):  
X. A. Cao ◽  
S. F. LeBoeuf ◽  
J. L. Garrett ◽  
A. Ebong ◽  
L. B. Rowland ◽  
...  
Keyword(s):  
Quantum Well ◽  
Light Emitting Diodes ◽  
Multiple Quantum Well ◽  
Light Output ◽  
Localized States ◽  
Multiple Quantum ◽  
Nonradiative Recombination ◽  
Light Emitting ◽  
Temperature Range ◽  
Green Leds

Absract:Temperature-dependent electroluminescence (EL) of InGaN/GaN multiple-quantum-well light-emitting diodes (LEDs) with peak emission energies ranging from 2.3 eV (green) to 3.3 eV (UV) has been studied over a wide temperature range (5-300 K). As the temperature is decreased from 300 K to 150 K, the EL intensity increases in all devices due to reduced nonradiative recombination and improved carrier confinement. However, LED operation at lower temperatures (150-5 K) is a strong function of In ratio in the active layer. For the green LEDs, emission intensity increases monotonically in the whole temperature range, while for the blue and UV LEDs, a remarkable decrease of the light output was observed, accompanied by a large redshift of the peak energy. The discrepancy can be attributed to various amounts of localization states caused by In composition fluctuation in the QW active regions. Based on a rate equation analysis, we find that the densities of the localized states in the green LEDs are more than two orders of magnitude higher than that in the UV LED. The large number of localized states in the green LEDs are crucial to maintain high-efficiency carrier capture at low temperatures.

Carrier Time-of-Flight Measurement Using a Probe Structure for Direct Evaluation of Carrier Transport in Multiple Quantum Well Solar Cells

2014 ◽  
Vol 4 (6) ◽  
pp. 1518-1525 ◽  
Author(s):  
Kasidit Toprasertpong ◽  
Naofumi Kasamatsu ◽  
Hiromasa Fujii ◽  
Tomoyuki Kada ◽  
Shigeo Asahi ◽  
...  
Keyword(s):  
Solar Cells ◽  
Quantum Well ◽  
Carrier Transport ◽  
Multiple Quantum Well ◽  
Time Of Flight ◽  
Multiple Quantum ◽  
Direct Evaluation ◽  
Flight Measurement

Vertical carrier transport in InGaAsP multiple-quantum-well laser structures: effect of p-doping

1997 ◽  
Vol 3 (2) ◽  
pp. 315-319 ◽  
Author(s):  
N. Tessler ◽  
S. Marcinkevicius ◽  
U. Olin ◽  
C.K.V. Silfvenius ◽  
B.F. Stalnacke ◽  
...  
Keyword(s):  
Quantum Well ◽  
Carrier Transport ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Laser ◽  
Multiple Quantum Well Laser

scholarly journals Modeling of cross‐well carrier transport in a multiple quantum well modulator

1991 ◽  
Vol 59 (23) ◽  
pp. 3009-3011 ◽  
Author(s):  
D. C. Hutchings ◽  
C. B. Park ◽  
A. Miller
Keyword(s):  
Quantum Well ◽  
Carrier Transport ◽  
Multiple Quantum Well ◽  
Multiple Quantum

Far infrared reflectivity of a GaAs/Al0.33Ga0.67As multiple quantum well structure

1996 ◽  
Vol 27 (1) ◽  
pp. 87-92
Author(s):  
P.M. Nikolić ◽  
Z. Ristovski ◽  
S. Đurić ◽  
V. Blagojević ◽  
M.D. Dramićanin ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Far Infrared ◽  
Multiple Quantum ◽  
Infrared Reflectivity ◽  
Quantum Well Structure
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