Semipolar (11-22)-based InGaN/GaN quantum wells for visible light emitters

2009 ◽  
Author(s):  
Mitsuru Funato ◽  
Yoichi Kawakami
Keyword(s):  
Visible Light ◽  
Quantum Wells ◽  
Light Emitters

Band Structure Engineering Based on InGaN/ZnGeN2 Heterostructure Quantum Wells for Visible Light Emitters

2021 ◽  
Author(s):  
Md Rezaul Karim ◽  
Benthara Hewage Dinushi Jayatunga ◽  
Kaitian Zhang ◽  
Menglin Zhu ◽  
Jinwoo Hwang ◽  
...  
Keyword(s):  
Band Structure ◽  
Visible Light ◽  
Quantum Wells ◽  
Light Emitters ◽  
Structure Engineering

scholarly journals Role of dislocations in nitride laser diodes with different indium content

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Agata Bojarska-Cieślińska ◽  
Łucja Marona ◽  
Julita Smalc-Koziorowska ◽  
Szymon Grzanka ◽  
Jan Weyher ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Defect Density ◽  
Laser Diodes ◽  
Diffusion Path ◽  
Vapour Phase ◽  
Indium Content ◽  
Nonradiative Recombination ◽  
Light Emitters ◽  
Vapour Phase Epitaxy

AbstractIn this work we investigate the role of threading dislocations in nitride light emitters with different indium composition. We compare the properties of laser diodes grown on the low defect density GaN substrate with their counterparts grown on sapphire substrate in the same epitaxial process. All structures were produced by metalorganic vapour phase epitaxy and emit light in the range 383–477 nm. We observe that intensity of electroluminescence is strong in the whole spectral region for devices grown on GaN, but decreases rapidly for the devices on sapphire and emitting at wavelength shorter than 420 nm. We interpret this behaviour in terms of increasing importance of dislocation related nonradiative recombination for low indium content structures. Our studies show that edge dislocations are the main source of nonradiative recombination. We observe that long wavelength emitting structures are characterized by higher average light intensity in cathodoluminescence and better thermal stability. These findings indicate that diffusion path of carriers in these samples is shorter, limiting the amount of carriers reaching nonradiative recombination centers. According to TEM images only mixed dislocations open into the V-pits, usually above the multi quantum wells thus not influencing directly the emission.

Growth of InGaN/GaN quantum wells with graded InGaN buffer for green-to-yellow light emitters

2016 ◽  
Vol 55 (8) ◽  
pp. 081001 ◽  
Author(s):  
Chia-Hsuan Hu ◽  
Ikai Lo ◽  
Yu-Chi Hsu ◽  
Cheng-Hung Shih ◽  
Wen-Yuan Pang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Yellow Light ◽  
Light Emitters

Semipolar III Nitride Semiconductors: Crystal Growth, Device Fabrication, and Optical Anisotropy

MRS Bulletin ◽  
2009 ◽  
Vol 34 (5) ◽  
pp. 334-340 ◽  
Author(s):  
Mitsuru Funato ◽  
Yoichi Kawakami
Keyword(s):  
Quantum Wells ◽  
Electric Fields ◽  
Optical Anisotropy ◽  
Optical Transition ◽  
Transition Probability ◽  
Device Fabrication ◽  
Optical Polarization ◽  
Polarization Anisotropy ◽  
Light Emitters ◽  
Novel Applications

AbstractSemipolar InGaN/GaN quantum wells (QWs) are quite attractive as visible light emitters. One of the reasons is that a better optical transition probability is expected because of weaker internal electric fields, compared to conventional polar QWs. In addition, in-plane optical polarization anisotropy, which is absent in conventional QWs, is another relevant property because it affects device design and also may provide a means for novel applications. We revealed that the in-plane optical anisotropy in semipolar QWs switched from one direction perpendicular to the [0001] crystal axis to the perpendicular direction as the In composition increases. This is a property unique to semipolar QWs and enables, for example, to make cavity mirrors of laser diodes by cleavage. In this article, we describe the concept of semipolar planes and fabrication of high-quality epitaxial films for semipolar QWs. Furthermore, we discuss device fabrication and optical polarization anisotropy.

Auger effect in yellow light emitters based on InGaN–AlGaN–GaN quantum wells

2016 ◽  
Vol 55 (5S) ◽  
pp. 05FG10 ◽  
Author(s):  
Thi Huong Ngo ◽  
Bernard Gil ◽  
Pierre Valvin ◽  
Benjamin Damilano ◽  
Kaddour Lekhal ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Yellow Light ◽  
Light Emitters ◽  
Auger Effect

Advances in the development of graded injector visible light emitters

1994 ◽  
Vol 138 (1-4) ◽  
pp. 692-696 ◽  
Author(s):  
J.F. Swenberg ◽  
M.W. Wang ◽  
R.J. Miles ◽  
M.C. Phillips ◽  
A.T. Hunter ◽  
...  
Keyword(s):  
Visible Light ◽  
Light Emitters
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