Band Structure Engineering Based on InGaN/ZnGeN2 Heterostructure Quantum Wells for Visible Light Emitters

Author(s):  
Md Rezaul Karim ◽  
Benthara Hewage Dinushi Jayatunga ◽  
Kaitian Zhang ◽  
Menglin Zhu ◽  
Jinwoo Hwang ◽  
...  
2020 ◽  
Vol 31 (14) ◽  
pp. 145716
Author(s):  
Hui Zhang ◽  
Zhen Yang ◽  
Li Shangguan ◽  
Xiaokai Song ◽  
Jianhua Sun ◽  
...  

2013 ◽  
Vol 250 (4) ◽  
pp. 760-764 ◽  
Author(s):  
J. S. Reparaz ◽  
A. R. Goñi ◽  
M. I. Alonso ◽  
M. Garriga

1987 ◽  
Vol 104 ◽  
Author(s):  
Federico Capasso ◽  
Fabio Beltram

ABSTRACTRecent work on defect related phenomena in heterojunctions and quantum well structures is reviewed. These include situations in which quantum wells behave as deep traps and the use of shallow and deep centers as new tools for band structure engineering. Among the latter tunable band discontinuities and the artificial tailoring of superlattice states via δ-doping techniques are discussed.


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