scholarly journals Review on formation mechanism of chemical reaction layer during chemical mechanical polishing of monocrystalline SiC and sapphire substrates

2016 ◽  
Vol 61 (36) ◽  
pp. 3930-3939
Author(s):  
Yang GAN ◽  
FeiHu ZhANG
Keyword(s):  
Chemical Reaction ◽  
Formation Mechanism ◽  
Reaction Layer ◽  
Chemical Mechanical Polishing ◽  
Mechanical Polishing ◽  
Sapphire Substrates

scholarly journals Contrast Experiments in Dielectrophoresis Polishing (DEPP)/Chemical Mechanical Polishing (CMP) of Sapphire Substrate

2019 ◽  
Vol 9 (18) ◽  
pp. 3704 ◽  
Author(s):  
Tianchen Zhao ◽  
Julong Yuan ◽  
Qianfa Deng ◽  
Kaiping Feng ◽  
Zhaozhong Zhou ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Sapphire Substrate ◽  
Chemical Mechanical Polishing ◽  
Mechanical Polishing ◽  
Uniform Electric Field ◽  
Maximum Increase ◽  
Sapphire Surface ◽  
Sapphire Substrates ◽  
Better Than ◽  
Surface Changes

The broad applications of sapphire substrates in many fields warrants an urgent demand for a highly efficient and high precision polishing method for the sapphire substrates. The authors proposed a novel sapphire substrate polishing method that is based on the dielectrophoresis (DEP) effect. The principle of dielectrophoresis polishing (DEPP) is described. A non-uniform electric field was added in the polishing area to drive abrasives moving in the direction towards the plate by the DEP force. The amount of abrasives that participates in the polishing action increases as the distribution of polishing slurry on sapphire surface changes, leading towards the improvement of sapphire polishing both in quality and efficiency. Comparative experiments between DEPP and traditional chemical mechanical polishing (CMP) were carried out. It was found that the maximum increase of sapphire MRR for DEPP is 71%, reaching 13 mg/h, and the minimum increase was 9.5%, reaching 4.6 mg/h. The surface roughness of the sapphire substrate decreases faster and more uniform with DEPP. The final surface roughness of the sapphire substrate after DEPP was Ra 0.87 nm and the flatness was 0.3078 waves (RMS value), which is better than 0.6863 waves (RMS value) of sapphire substrate with traditional CMP polishing.

Sign in / Sign up

Export Citation Format

Share Document