Progress in the magnetic field effects in organic semiconductor devices

2010 ◽  
Vol 55 (24) ◽  
pp. 2361-2370 ◽  
Author(s):  
QunLiang XIONG ZuHong SONG ◽  
YanLian LEI ◽  
祖洪 熊
Keyword(s):  
Magnetic Field ◽  
Organic Semiconductor ◽  
Semiconductor Devices ◽  
Magnetic Field Effects ◽  
Field Effects ◽  
Organic Semiconductor Devices ◽  
The Magnetic Field

Spin and magnetic field effects in organic semiconductor devices

2005 ◽  
Vol 152 (4) ◽  
pp. 385 ◽  
Author(s):  
M. Wohlgenannt ◽  
Z.V. Vardeny ◽  
J. Shi ◽  
T.L. Francis ◽  
X.M. Jiang ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Organic Semiconductor ◽  
Semiconductor Devices ◽  
Magnetic Field Effects ◽  
Field Effects ◽  
Organic Semiconductor Devices

scholarly journals LOCAL ORDER AND MAGNETIC FIELD EFFECTS ON THE ELECTRONIC PROPERTIES OF DISORDERED BINARY ALLOYS IN THE QUANTUM SITE PERCOLATION LIMIT

1999 ◽  
Vol 13 (32) ◽  
pp. 3861-3877
Author(s):  
D. F. DE MELLO ◽  
G. G. CABRERA
Keyword(s):  
Magnetic Field ◽  
Electronic Properties ◽  
Binary Alloys ◽  
Finite Size ◽  
Local Order ◽  
Destructive Interference ◽  
Magnetic Field Effects ◽  
Site Percolation ◽  
Field Effects ◽  
The Magnetic Field

Electronic properties of disordered binary alloys are studied via the calculation of the average Density of States (DOS) in two and three dimensions. We propose a new approximate scheme that allows for the inclusion of local order effects in finite geometries and extrapolates the behavior of infinite systems following finite-size scaling ideas. We particularly investigate the limit of the Quantum Site Percolation regime described by a tight-binding Hamiltonian. This limit was chosen to probe the role of short range order (SRO) properties under extreme conditions. The method is numerically highly efficient and asymptotically exact in important limits, predicting the correct DOS structure as a function of the SRO parameters. Magnetic field effects can also be included in our model to study the interplay of local order and the shifted quantum interference driven by the field. The average DOS is highly sensitive to changes in the SRO properties and striking effects are observed when a magnetic field is applied near the segregated regime. The new effects observed are twofold: there is a reduction of the band width and the formation of a gap in the middle of the band, both as a consequence of destructive interference of electronic paths and the loss of coherence for particular values of the magnetic field. The above phenomena are periodic in the magnetic flux. For other limits that imply strong localization, the magnetic field produces minor changes in the structure of the average DOS.

scholarly journals The Magnetic Field Effects on Electrolysis. II. The Anodic Surface Oxidation of Gold

1987 ◽  
Vol 60 (11) ◽  
pp. 4163-4165 ◽  
Author(s):  
Takeshi Watanabe ◽  
Yoshifumi Tanimoto ◽  
Ryoichi Nakagaki ◽  
Mitsuo Hiramatsu ◽  
Tadayoshi Sakata ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Surface Oxidation ◽  
Magnetic Field Effects ◽  
Field Effects ◽  
The Magnetic Field
Sign in / Sign up

Export Citation Format

Share Document