scholarly journals Investigation of the magnetic field effects on electron mobility in tri-(8-hydroxyquinoline)-aluminum based light-emitting devices

2011 ◽  
Vol 99 (3) ◽  
pp. 033509 ◽  
Author(s):  
Qiming Peng ◽  
Jixiang Sun ◽  
Xianjie Li ◽  
Mingliang Li ◽  
Feng Li
Keyword(s):  
Magnetic Field ◽  
Electron Mobility ◽  
Magnetic Field Effects ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Field Effects ◽  
The Magnetic Field

scholarly journals Abnormal magnetic field effects in doped organic light-emitting devices

2018 ◽  
Vol 63 (28-29) ◽  
pp. 2974-2984
Author(s):  
Jinqiu Deng ◽  
Xiantong Tang ◽  
Ruiheng Pan ◽  
Yeqian Hu ◽  
Hongqiang Zhu ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Magnetic Field Effects ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Field Effects ◽  
Organic Light ◽  
Organic Light Emitting Devices

Study of the magnetic field effects on carriers’ mobility in polymer based light-emitting diodes

2012 ◽  
Vol 162 (3-4) ◽  
pp. 257-260 ◽  
Author(s):  
Jixiang Sun ◽  
Qiming Peng ◽  
Xianjie Li ◽  
Mingliang Li ◽  
Feng Li
Keyword(s):  
Magnetic Field ◽  
Light Emitting Diodes ◽  
Magnetic Field Effects ◽  
Light Emitting ◽  
Field Effects ◽  
The Magnetic Field

The magnetic field effects caused by three-combined mechanisms in organic light emitting diodes

2015 ◽  
Vol 45 (4) ◽  
pp. 396-402 ◽  
Author(s):  
ZuHong XIONG ◽  
Hong LIU ◽  
QiaoMing ZHANG ◽  
YongZhou LING ◽  
WeiYao JIA ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Light Emitting Diodes ◽  
Organic Light Emitting Diodes ◽  
Magnetic Field Effects ◽  
Light Emitting ◽  
Field Effects ◽  
Organic Light ◽  
The Magnetic Field

Peculiar magnetic field effects in organic light-emitting diodes with different metal cathodes

2012 ◽  
Vol 42 (5) ◽  
pp. 475-481
Author(s):  
QiaoMing ZHANG ◽  
YanLian LEI ◽  
YinTao YOU ◽  
ZuHong XIONG ◽  
Lin CHEN ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Light Emitting Diodes ◽  
Organic Light Emitting Diodes ◽  
Magnetic Field Effects ◽  
Light Emitting ◽  
Field Effects ◽  
Organic Light

scholarly journals LOCAL ORDER AND MAGNETIC FIELD EFFECTS ON THE ELECTRONIC PROPERTIES OF DISORDERED BINARY ALLOYS IN THE QUANTUM SITE PERCOLATION LIMIT

1999 ◽  
Vol 13 (32) ◽  
pp. 3861-3877
Author(s):  
D. F. DE MELLO ◽  
G. G. CABRERA
Keyword(s):  
Magnetic Field ◽  
Electronic Properties ◽  
Binary Alloys ◽  
Finite Size ◽  
Local Order ◽  
Destructive Interference ◽  
Magnetic Field Effects ◽  
Site Percolation ◽  
Field Effects ◽  
The Magnetic Field

Electronic properties of disordered binary alloys are studied via the calculation of the average Density of States (DOS) in two and three dimensions. We propose a new approximate scheme that allows for the inclusion of local order effects in finite geometries and extrapolates the behavior of infinite systems following finite-size scaling ideas. We particularly investigate the limit of the Quantum Site Percolation regime described by a tight-binding Hamiltonian. This limit was chosen to probe the role of short range order (SRO) properties under extreme conditions. The method is numerically highly efficient and asymptotically exact in important limits, predicting the correct DOS structure as a function of the SRO parameters. Magnetic field effects can also be included in our model to study the interplay of local order and the shifted quantum interference driven by the field. The average DOS is highly sensitive to changes in the SRO properties and striking effects are observed when a magnetic field is applied near the segregated regime. The new effects observed are twofold: there is a reduction of the band width and the formation of a gap in the middle of the band, both as a consequence of destructive interference of electronic paths and the loss of coherence for particular values of the magnetic field. The above phenomena are periodic in the magnetic flux. For other limits that imply strong localization, the magnetic field produces minor changes in the structure of the average DOS.

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