Solid-State Diffusion Reaction and Formation of Intermetallic Phases in the Fe-Al System

2014 ◽  
Vol 65 (2) ◽  
pp. 262-272 ◽  
Author(s):  
K. Bhanumurthy ◽  
W. Krauss ◽  
J. Konys
1993 ◽  
Vol 323 ◽  
Author(s):  
Alan J. Mockler ◽  
Peter J. Goodhew ◽  
Elizabeth A. Logan

AbstractThe microstructure of 95Pb-5Sn flip-chip solder bonds deposited on Cr/Cu/Au metallisation pads has been studied using both light and electron analysis techniques. The presence of Sn-Cu- Au ternary intermetallic phases was detected within the Pb-rich matrix at significant distances from the originally deposited interface. The distribution of the phases present after the solder has undergone a reflow heat treatment can be interpreted using recent equilibrium ternary diagram data. An investigation was also made into the effects of various non-reflow heat treatments at carefully chosen temperatures, to qualitatively evaluate the extent of solid state diffusion and the resultant phase distribution.


1992 ◽  
Vol 06 (24) ◽  
pp. 1535-1540
Author(s):  
V. VIDYALAL ◽  
K. RAJASREE ◽  
C.P.G. VALLABHAN

Lead-doped Bi-2223 superconductors were prepared by two main popular solid state reaction routes, viz. solid state diffusion reaction and the matrix method. Even though both routes produce single-phase materials superconducting at 110 K, the resistivity behaviors above Tc are found to be different. Aging/degradation behavior was studied in terms of Tc on both sets of samples stored in a desiccator for eight months. Our studies indicate that the synthesising routes play a major role in the preparation of high quality bulk Pb-doped Bi-2223 superconductors which are more resistant to degradation when exposed to humid conditions.


1990 ◽  
Vol 21 (11) ◽  
pp. 2897-2903 ◽  
Author(s):  
K. Bhanumurthy ◽  
G. B. Kale ◽  
S. K. Khera ◽  
M. K. Asundi

2002 ◽  
Vol 17 (1) ◽  
pp. 52-59 ◽  
Author(s):  
N.F. Gao ◽  
Y. Miyamoto

The joining of a Ti3SiC2 ceramic with a Ti–6Al–4V alloy was carried out at the temperature range of 1200–1400 °C for 15 min to 4 h in a vacuum. The total diffusion path of joining was determined to be Ti3SiC2/Ti5Si3Cx/Ti5Si3Cx + TiCx/TiCx/Ti. The reaction was rate controlled by the solid-state diffusion below 1350 °C and turned to the liquid-state diffusion controlled with a dramatic increase of parabolic rate constant Kp when the temperature exceeded 1350 °C. The TiCx tended to grow at the boundarywith the Ti–6Al–4V alloy at a higher temperature and longer holding time. TheTi3SiC2/Ti–6Al–4V joint is expected to be applied to implant materials.


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