SiC Coating by RF Sputtering as Tritium Permeation Barrier for Fusion Blanket

2007 ◽  
Vol 52 (4) ◽  
pp. 865-869 ◽  
Author(s):  
Zhenyu Yao ◽  
Akihiro Suzuki ◽  
Denis Levchuk ◽  
Takayuki Terai
Keyword(s):  
Rf Sputtering ◽  
Tritium Permeation

Titania Based Nano-ionic Memristive Crossbar Arrays: Fabrication and Resistive Switching Characteristics

2019 ◽  
Vol 9 (4) ◽  
pp. 486-493 ◽  
Author(s):  
S. Sahoo ◽  
P. Manoravi ◽  
S.R.S. Prabaharan
Keyword(s):  
Resistive Switching ◽  
Bottom Electrode ◽  
Rf Sputtering ◽  
Hysteresis Curve ◽  
Bipolar Switching ◽  
Post Annealing ◽  
Endurance Tests ◽  
Bilayer Device ◽  
Switching Characteristics ◽  
Pinched Hysteresis

Introduction: Intrinsic resistive switching properties of Pt/TiO2-x/TiO2/Pt crossbar memory array has been examined using the crossbar (4×4) arrays fabricated by using DC/RF sputtering under specific conditions at room temperature. Materials and Methods: The growth of filament is envisaged from bottom electrode (BE) towards the top electrode (TE) by forming conducting nano-filaments across TiO2/TiO2-x bilayer stack. Non-linear pinched hysteresis curve (a signature of memristor) is evident from I-V plot measured using Pt/TiO2-x /TiO2/Pt bilayer device (a single cell amongst the 4×4 array is used). It is found that the observed I-V profile shows two distinguishable regions of switching symmetrically in both SET and RESET cycle. Distinguishable potential profiles are evident from I-V curve; in which region-1 relates to the electroformation prior to switching and region-2 shows the switching to ON state (LRS). It is observed that upon reversing the polarity, bipolar switching (set and reset) is evident from the facile symmetric pinched hysteresis profile. Obtaining such a facile switching is attributed to the desired composition of Titania layers i.e. the rutile TiO2 (stoichiometric) as the first layer obtained via controlled post annealing (650oC/1h) process onto which TiO2-x (anatase) is formed (350oC/1h). Results: These controlled processes adapted during the fabrication step help manipulate the desired potential barrier between metal (Pt) and TiO2 interface. Interestingly, this controlled process variation is found to be crucial for measuring the switching characteristics expected in Titania based memristor. In order to ensure the formation of rutile and anatase phases, XPS, XRD and HRSEM analyses have been carried out. Conclusion: Finally, the reliability of bilayer memristive structure is investigated by monitoring the retention (104 s) and endurance tests which ensured the reproducibility over 10,000 cycles.

Narrow optical gap ferroelectric Bi2ZnTiO6 thin films deposited by RF sputtering

2019 ◽  
Vol 7 (17) ◽  
pp. 10696-10701 ◽  
Author(s):  
Fábio G. Figueiras ◽  
J. Ramiro A. Fernandes ◽  
J. P. B. Silva ◽  
Denis O. Alikin ◽  
Eugénia C. Queirós ◽  
...  
Keyword(s):  
Thin Films ◽  
Rf Sputtering ◽  
Optical Gap ◽  
Ferroelectric Oxide

Thriving ferroelectric oxide Bi2ZnTiO6 thin films with a 1.48 eV optical gap.

scholarly journals High quality ITO thin films grown by dc and RF sputtering without oxygen

2010 ◽  
Vol 43 (5) ◽  
pp. 055402 ◽  
Author(s):  
Ocal Tuna ◽  
Yusuf Selamet ◽  
Gulnur Aygun ◽  
Lutfi Ozyuzer
Keyword(s):  
Thin Films ◽  
Rf Sputtering ◽  
High Quality ◽  
Ito Thin Films

An efficient graphene oxide reinforced aluminum phosphate/Cr2O3 double coating as an enhanced tritium permeation barrier

2021 ◽  
Vol 405 ◽  
pp. 126699
Author(s):  
Wei Liu ◽  
Lihong Xue ◽  
Jiao Di ◽  
Qilai Zhou ◽  
Hang Zhang ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
Aluminum Phosphate ◽  
Tritium Permeation ◽  
Double Coating

Characteristics of CIGS thin films prepared by RF sputtering employing CIGS single target

2011 ◽  
Author(s):  
Tae-Won Kim ◽  
Young-Baek Kim ◽  
Sang-In Song ◽  
Chae-Whan Jung ◽  
Jong-Ho Lee
Keyword(s):  
Thin Films ◽  
Rf Sputtering ◽  
Single Target

Characterization of Cu(InxGa1−x)2Se3.5 thin films prepared by rf sputtering

1998 ◽  
Vol 50 (1-4) ◽  
pp. 13-18 ◽  
Author(s):  
Tooru Tanaka ◽  
Nobutaka Tanahashi ◽  
Toshiyuki Yamaguchi ◽  
Akira Yoshida
Keyword(s):  
Thin Films ◽  
Rf Sputtering
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