ZnO thin film based ethanol sensor derived by RF sputtering technique

2020 ◽  
Author(s):  
Mohini Dwivedi
Keyword(s):  
Thin Film ◽  
Rf Sputtering ◽  
Zno Thin Film ◽  
Ethanol Sensor

A ZnO Driven Silicon Cantilever for Nanoscale Actuation

2012 ◽  
Vol 486 ◽  
pp. 23-26
Author(s):  
Yan Hui Yuan ◽  
He Jun Du ◽  
Pei Hong Wang
Keyword(s):  
Thin Film ◽  
High Frequency ◽  
Room Temperature ◽  
Rf Sputtering ◽  
Laser Doppler Vibrometer ◽  
Laser Doppler ◽  
Piezoelectric Constant ◽  
Zno Thin Film ◽  
Frequency Responses ◽  
Silicon Cantilever

A micro silicon cantilever actuated by ZnO thin film was designed, fabricated and characterized. The ZnO thin film was deposited by RF sputtering at room temperature. The transverse piezoelectric constant d31 was found to be-4.66 pC/N. Time and frequency responses of the cantilever actuator were investigated by means of a laser Doppler vibrometer. The actuator has a sensitivity of 12 nm/V at 15 kHz. Its 1st bending resonance was observed at 53 kHz. The bandwidth was found to be 27 kHz with damping of 0.35%. The cantilever demonstrated capability of high frequency actuation on a nanometer level.

scholarly journals ZnO Thin-Film Transistor Grown by rf Sputtering Using Carbon Dioxide and Substrate Bias Modulation

2014 ◽  
Vol 2014 ◽  
pp. 1-7 ◽  
Author(s):  
Junghwan Kim ◽  
Jun Meng ◽  
Donghoon Lee ◽  
Meng Yu ◽  
Dukyean Yoo ◽  
...  
Keyword(s):  
Thin Film ◽  
Carbon Dioxide ◽  
Thin Film Transistor ◽  
Rf Sputtering ◽  
Rf Magnetron Sputtering ◽  
Substrate Bias ◽  
Zno Thin Film ◽  
The Poor ◽  
Dc Bias ◽  
Bottom Gate

ZnO thin-film transistor (TFT) grown by rf magnetron sputtering in Ar/O2atmosphere shows inferior turn-off characteristics compared to ZnO TFT grown by other methods. We thought that reactions between Zn and O2might produce defects responsible for the poor turn-off behavior. In order to solve this problem, we studied sputtering growth in Ar/CO2atmosphere at 450°C. During sputtering growth, we modulated substrate dc bias to control ion supply to the substrate. After growth ZnO was annealed in CO2and O2gas. With these methods, our bottom-gate ZnO thin-film transistor showed 4.7 cm2/Vsec mobility,4×106on/off ratio, and –2 V threshold voltage.

Comparison of Deposition Methods of ZnO Thin Film on Flexible Substrate

2017 ◽  
Vol 5 (3) ◽  
pp. 536
Author(s):  
A. A.M. Idris ◽  
R. Arsat ◽  
M. K. Ahmad ◽  
F. Sidek
Keyword(s):  
Thin Film ◽  
Spray Pyrolysis ◽  
Spray Pyrolysis Technique ◽  
Flexible Substrate ◽  
Sol Gel ◽  
Rf Sputtering ◽  
Electrical Performance ◽  
Zno Thin Film ◽  
Zno Film ◽  
Zno Nanostructure

This paper reports the effect of the different deposition methods towards the ZnO nanostructure crystal quality and film thickness on the polyimide substrate. The ZnO film has been deposited by using the spray pyrolysis technique, sol-gel and RF Sputtering. Different methods give a different nanostructure of the ZnO thin film. Sol gel methods, results of nanoflowers ZnO thin film with the thickness of thin film is 600nm. It also produces the best of the piezoelectric effect in term of electrical performance, which is 5.0 V and 12 MHz of frequency which is higher than other frequency obtained by spray pyrolysis and RF sputtering.

Optimization of Zinc Oxide Thin Films for Silicon Surface Acoustic Wave Resonator Applications

2012 ◽  
Vol 518-523 ◽  
pp. 3772-3779 ◽  
Author(s):  
Fatini Sidek ◽  
Anis Nurashikin Nordin ◽  
Raihan Othman
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Zinc Oxide ◽  
Integrated Circuit ◽  
High Performance ◽  
Rf Sputtering ◽  
Zno Thin Film ◽  
Taguchi Optimization ◽  
Saw Resonators

High quality ZnO thin films are required to produce CMOS SAW resonators operating with low losses and high Q. This work intends to develop high performance CMOS SAW resonators through optimization of both the quality of the ZnO and the design of the SAW resonator. Zinc oxide was chosen for this work as the piezoelectric material due to its superior acoustic propagation properties and compatibility with integrated circuit fabrication techniques. ZnO has demonstrated good performance characteristics for a variety of piezoelectric devices. For optimization of the quality of the deposited ZnO thin film, different RF-sputtering conditions will be used to investigate which condition produces the best piezoelectric quality of the ZnO thin film. The experiments were carried using Taguchi optimization method, which studies a large number of variables with a small number of experiments.

Characterization of magnesium oxide gate insulators grown using RF sputtering for ZnO thin-film transistors

2014 ◽  
Vol 14 (5) ◽  
pp. 794-797 ◽  
Author(s):  
Jong Hoon Lee ◽  
Hong Seung Kim ◽  
Sang Hyun Kim ◽  
Nak Won Jang ◽  
Young Yun
Keyword(s):  
Thin Film ◽  
Magnesium Oxide ◽  
Thin Film Transistors ◽  
Rf Sputtering ◽  
Zno Thin Film ◽  
Gate Insulators

scholarly journals A Study on the ZnO Thin Film Deposited by RF Sputtering Method as an Electron Transport Layer in Quantum Dot Light-Emitting Diodes

2021 ◽  
Vol 59 (10) ◽  
pp. 718-723
Author(s):  
Myoungsuk Kang ◽  
Jiwan Kim
Keyword(s):  
Thin Film ◽  
Electron Transport ◽  
Rf Sputtering ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Device Performance ◽  
Zno Thin Film ◽  
Zno Nps ◽  
Light Emitting ◽  
Partial Pressures

We report a highly efficient quantum dot light emitting diode (QLEDs) with a radio frequency (RF) sputtered ZnO thin film as an electron transport layer (ETL) instead of the conventional ZnO nanoparticles (NPs) by solution process. ZnO NPs have been used as a key material to improve the performance of QLEDs, but the charge imbalance in ZnO NPs resulting from fast electron injection, and their limited uniformity are significant disadvantages. In this study, ZnO layers were deposited by RF sputtering with various O2 partial pressures. All of the ZnO films showed preferential growth along the (002) direction, smooth morphology, and good optical transmittance. To test their feasibility for QLEDs, we fabricated devices with RF sputtered ZnO layers as an ETL, which has the inverted structure of ITO/RF sputtered ZnO/QDs/CBP/MoO3/Al. The optical/electrical characteristics of two devices, comprised of RF sputtered ZnO and ZnO NPs, were compared with each other. QLEDs with the sputtered ZnO ETL achieved a current efficiency of 11.32 cd/A, which was higher than the 8.23 cd/A of the QLEDs with ZnO NPs ETL. Next, to find the optimum ZnO thin film for highly efficient QLEDs, deposition conditions with various O2 partial pressures were tested, and device performance was investigated. The maximum current efficiency was 13.33 cd/A when the ratio of Ar/O2 was 4:3. Additional oxygen gas reduced the O vacancies in the ZnO thin film, which resulted in a decrease in electrical conductivity, thereby improving charge balance in the emission layer of the QLEDs. As a result, we provide a way to control the ZnO ETL properties and to improve device performance by controlling O2 partial pressure.

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