Effects of High Temperature Pulsed Helium Implantation on Tungsten Surface Morphology

2007 ◽  
Vol 52 (3) ◽  
pp. 544-548 ◽  
Author(s):  
Ross Radel ◽  
Gerald Kulcinski
Keyword(s):  
High Temperature ◽  
Surface Morphology ◽  
Tungsten Surface ◽  
Helium Implantation

Surface morphology of ion-beam deposited carbon films under high temperature

2002 ◽  
Vol 20 (6) ◽  
pp. 2072
Author(s):  
Meiyong Liao ◽  
Chunlin Chai ◽  
Shaoyan Yang ◽  
Zhikai Liu ◽  
Fuguang Qin ◽  
...  
Keyword(s):  
High Temperature ◽  
Surface Morphology ◽  
Ion Beam ◽  
Carbon Films

Effects of repetitive ELM-like heat pulses on tungsten surface morphology

2007 ◽  
Vol 82 (15-24) ◽  
pp. 1904-1910 ◽  
Author(s):  
Y. Ueda ◽  
M. Toda ◽  
M. Nishikawa ◽  
K. Kondo ◽  
K.A. Tanaka
Keyword(s):  
Surface Morphology ◽  
Tungsten Surface ◽  
Heat Pulses

scholarly journals Nano-Grain Ni/ZrO2 Functional Gradient Coating Fabricated by Double Pulses Electrodeposition with Enhanced High Temperature Corrosion Performance

Coatings ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 332 ◽  
Author(s):  
Wen Ge ◽  
Taisong He ◽  
Meijiao Wang ◽  
Jiamei Li
Keyword(s):  
Crystal Structure ◽  
High Temperature ◽  
Surface Morphology ◽  
Vertical Direction ◽  
Double Pulse ◽  
Pulse Electrodeposition ◽  
Face Centered Cubic ◽  
X Ray ◽  
Functional Gradient ◽  
Gradient Coating

Functional gradient materials (FGM) have many excellent properties, and high-performance gradient coating exhibits good prospective application. In this paper, the nano-grain Ni/ZrO2 gradient coating was prepared by double pulse electrodeposition (BP). The surface morphology, crystal structure and electrochemical corrosion resistance of the nano-grain Ni/ZrO2 coating and Ni coating, annealed at different temperatures (400–800 °C), have been compared. In the vertical direction to the substrate surface, the content of ZrO2 increases from 0% to 34.99%. X-ray diffraction (XRD) revealed that the average crystal size of Ni/ZrO2 gradient coating gradually increases from 13.75 to 27.75 nm, and the crystal structure is a face-centered cubic (FCC). The main crystal orientation faces are (111) and (200), while the (200) face exhibited a stronger preferred orientation. Compared with the Ni coating by scanning electron microscopy, the surface morphology of double pulse fabricated Ni/ZrO2 gradient coating was revealed as being smoother, denser, and having fewer pores, and the crystal particle size distribution became narrow. X-ray photoelectron spectroscopy (XPS) shows that the chemical binding states of elements Ni and Zr have been altered. The binding energies of 2p3/2 and 2p1/2 for Ni have been increased, resulting in a higher electron donor state of Ni. The binding energy of 3d5/2 and 3d3/2 of Zr4+ in ZrO2 is decreased, thus becoming better electron acceptors. Chemical bonding has been formed at the Ni/ZrO2 interface. This study demonstrated that double pulse electrodeposition is a promising fabrication method for functional gradient coatings for high temperature applications.

scholarly journals Changes in surface morphology of helium-induced tungsten nanostructure during high-temperature annealing

2020 ◽  
Vol 22 ◽  
pp. 100730 ◽  
Author(s):  
Chun-Shang Wong ◽  
Josh A. Whaley ◽  
Takuro Wada ◽  
Sakumi Harayama ◽  
Yasuhisa Oya ◽  
...  
Keyword(s):  
High Temperature ◽  
Surface Morphology ◽  
High Temperature Annealing

Epitaxial TaC Films for the Selective Area Growth of SiC

2008 ◽  
Vol 600-603 ◽  
pp. 183-186 ◽  
Author(s):  
Kenneth A. Jones ◽  
T.S. Zheleva ◽  
R.D. Vispute ◽  
Shiva S. Hullavarad ◽  
M. Ervin ◽  
...  
Keyword(s):  
High Temperature ◽  
Surface Morphology ◽  
Epitaxial Growth ◽  
Lattice Parameter ◽  
Selective Area Growth ◽  
Recrystallization Process ◽  
High Temperature Annealing ◽  
Selective Area ◽  
Area Growth ◽  
Lattice Matched

At sufficiently high temperatures PLD deposited TaC films can be grown epitaxially on 4H-SiC (0001) substrates; at lower temperatures the films recrystallize and ball up forming a large number of pinholes. The growth temperature for epitaxy was found to be 1000°C, and it was facilitated by the epitaxial growth of a thin (2 nm) transition layer of hexagonal Ta2C. High temperature annealing produced changes in the surface morphology, caused grain growth, and created pin holes through a recrystallization process in the films deposited at the lower temperatures, while the films deposited at the higher temperatures remained virtually unchanged. Using TEM it is shown that the (0001) basal planes of the hexagonal 4H-SiC and Ta2C phases are aligned, and they were also parallel to the (111) plane in the cubic TaC with the [101] cubic direction being parallel to the hexagonal [2110] hexagonal direction. The Ta2C interlayer most likely is formed because its lattice parameter in the basel plane (3.103 Ǻ) is intermediate between that of the 4H-SiC (3.08 Ǻ) and the TaC (3.150 Ǻ). Given that Al.5Ga.5N is lattice matched to TaC, it could be an excellent substrate for the growth of GaN/AlGaN heterostructures.

Fabrication of Simple GaAs Solar Cell by Zn Diffusion Method

2013 ◽  
Vol 684 ◽  
pp. 312-316 ◽  
Author(s):  
Sheng Po Chang
Keyword(s):  
Solar Cell ◽  
High Temperature ◽  
Surface Morphology ◽  
Gaas Substrate ◽  
Substrate Surface ◽  
Temperature Treatment ◽  
High Temperature Treatment ◽  
Diffusion Method ◽  
Dopant Content ◽  
Zn Diffusion

We reported the spin-on Zincsilicafilm dopant content of the diffusion process and the formation of the p+ layer were applied to fabricate GaAs solar cells and their characteristics were investigated. The p-n junction was formed by a thermal furnace from the diffusion of zinc into the GaAs substrate. It was found that the GaAs substrate must be covered by a 100-nm-thick SiO2 layer. This reduced the damage to the GaAs substrate surface morphology that occurred during high temperature treatment and made the cleaning of the residual solvate on the surface easier

Surface morphology effect on the photoresponse of high temperature superconducting microbridges

1996 ◽  
Vol 69 (9) ◽  
pp. 1306-1308 ◽  
Author(s):  
Hsiung Chou ◽  
H. Z. Chen ◽  
Y. C. Chen ◽  
T. L. Lin ◽  
T. C. Chow ◽  
...  
Keyword(s):  
High Temperature ◽  
Surface Morphology ◽  
High Temperature Superconducting ◽  
Morphology Effect
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