scholarly journals Effects of organic additive saccharin on the magnetic properties of CoMnP thin films

2010 ◽  
Vol 7 (1) ◽  
pp. 159-166
Author(s):  
M.RM. Krishnappa ◽  
N. Rajasekaran ◽  
S. Ganesan ◽  
R.N. Emerson
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Electrochemical Deposition ◽  
Low Cost ◽  
Magnetic Thin Films ◽  
Organic Additive ◽  
Mems Devices ◽  
Organic Additives ◽  
X Ray ◽  
Hcp Structure

Electrodeposition technique provides an easy way to produce magnetic thin films. Magnetic thin films are extensively used in various magnetic induction writing heads, magnetic MEMS devices and other magnetic sensing devices. Thus we have synthesized CoMnP thin films from aqueous bath with organic additive saccharin using electrochemical deposition technique and examined its magnetic properties. The electrochemical deposition method is especially interesting due to its low cost, high throughput and high quality of deposit. The CoMnP alloys were electrodeposited galvanostatically for various composition of the bath solution and for various concentration of the additive saccharin. The effects of electrodeposition condition and organic additive saccharin on the magnetic properties of CoMnP thin films were investigated. Structure and the Morphology of the film were studied using X-Ray diffractometer (XRD) and scanning electron microscopy (SEM). Elemental compositions of the film were studied using energy dispersive X-Ray Spectroscopy (EDS). Magnetic properties of the deposited films were studied using Vibrating sample Magnetometer (VSM). SEM measurement indicated that the surface morphology was affected by the nature of the organic additives to a large extent. CoMnP films formed under optimized conditions are found to be polycrystalline in nature with hcp structure. Moreover, it was obvious that the presence of organic additive saccharin, in the electroplating bath, modified the magnetic properties of the CoMnP thin films according to the VSM measurements.

scholarly journals Nanocrystallization in FINEMET-Type Fe73.5Nb3Cu1Si13.5B9 and Fe72.5Nb1.5Mo2Cu1.1Si14.2B8.7 Thin Films

Materials ◽  
2020 ◽  
Vol 13 (2) ◽  
pp. 348 ◽  
Author(s):  
Evgeniya A. Mikhalitsyna ◽  
Vasiliy A. Kataev ◽  
Aitor Larrañaga ◽  
Vladimir N. Lepalovskij ◽  
Galina V. Kurlyandskaya
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Magnetic Thin Films ◽  
X Ray Diffraction ◽  
Magnetic Field Sensors ◽  
X Ray ◽  
Plasma Sputtering ◽  
Microelectronic Devices ◽  
Low Dimensional ◽  
20 Nm

A growing variety of microelectronic devices and magnetic field sensors as well as a trend of miniaturization demands the development of low-dimensional magnetic materials and nanostructures. Among them, soft magnetic thin films of Finemet alloys are appropriate materials for sensor and actuator devices. Therefore, one of the important directions of the research is the optimization of thin film magnetic properties. In this study, the structural transformations of the Fe73.5Nb3Cu1Si13.5B9 and Fe72.5Nb1.5Mo2Cu1.1Si14.2B8.7 films of 100, 150 and 200 nm thicknesses were comparatively analyzed together with their magnetic properties and magnetic anisotropy. The thin films were prepared using the ion-plasma sputtering technique. The crystallization process was studied by certified X-ray diffraction (XRD) methods. The kinetics of crystallization was observed due to the temperature X-ray diffraction (TDX) analysis. Magnetic properties of the films were studied by the magneto-optical Kerr microscopy. Based on the TDX data the delay of the onset crystallization of the films with its thickness decreasing was shown. Furthermore, the onset crystallization of the 150 and 200 nm films began at the temperature of about 400–420 °C showing rapid grain growth up to the size of 16–20 nm. The best magnetic properties of the films were formed after crystallization after the heat treatment at 350–400 °C when the stress relaxation took place.

Effect of Annealing temperature on the Structural and Magnetic Properties of TbxY3-xFe5O12(x = 0.0, 1.0, 2.0) Thin Films Prepared by Sol-Gel Process

2012 ◽  
Vol 501 ◽  
pp. 236-241 ◽  
Author(s):  
Ftema W. Aldbea ◽  
Noor Bahyah Ibrahim ◽  
Mustafa Hj. Abdullah ◽  
Ramadan E. Shaiboub
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Vibrating Sample Magnetometer ◽  
X Ray ◽  
Garnet Phase ◽  
Sol Gel Process ◽  
Amorphous Structures

Thin films nanoparticles TbxY3-xFe5O12 (x=0.0, 1.0, 2.0) were prepared by the sol-gel process followed by annealing process at various annealing temperatures of 700° C, 800° C and 900° C in air for 2 h. The results obtained from X-ray diffractometer (XRD) show that the films annealed below 900°C exhibit peaks of garnet mixed with small amounts of YFeO3 and Fe2O3. Pure garnet phase has been detected in the films annealed at 900°C. Before annealing the films show amorphous structures. The particles sizes measurement using the field emission scanning electron microscope (FE-SEM) showed that the particles sizes increased as the annealing temperature increased. The magnetic properties were measured at room temperature using the vibrating sample magnetometer (VSM). The saturation magnetization (Ms) of the films also increased with the annealing temperature. However, different behavior of coercivity (Hc) has been observed as the annealing temperature was increased.

Structure of magnetic thin films and nanostructures studied by extended X-ray absorption fine structure

2000 ◽  
Vol 454-456 ◽  
pp. 723-728 ◽  
Author(s):  
H. Magnan ◽  
P. Le Fèvre ◽  
A. Midoir ◽  
D. Chandesris ◽  
H. Jaffrès ◽  
...  
Keyword(s):  
Thin Films ◽  
Fine Structure ◽  
Magnetic Thin Films ◽  
X Ray ◽  
Absorption Fine ◽  
X Ray Absorption

scholarly journals Effects of Perpendicular Magnetic Field Annealing on the Structural and Magnetic Properties of [Co/Ni]2/PtMn Thin Films

2021 ◽  
Vol 7 (3) ◽  
pp. 38
Author(s):  
Roshni Yadav ◽  
Chun-Hsien Wu ◽  
I-Fen Huang ◽  
Xu Li ◽  
Te-Ho Wu ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Thin Films ◽  
Magnetic Properties ◽  
Photoelectron Spectroscopy ◽  
Perpendicular Magnetic Field ◽  
Face Centered Cubic ◽  
Lattice Image ◽  
X Ray ◽  
Field Annealing ◽  
Face Centered

In this study, [Co/Ni]2/PtMn thin films with different PtMn thicknesses (2.7 to 32.4 nm) were prepared on Si/SiO2 substrates. The post-deposition perpendicular magnetic field annealing (MFA) processes were carried out to modify the structures and magnetic properties. The MFA process also induced strong interlayer diffusion, rendering a less sharp interface between Co and Ni and PtMn layers. The transmission electron microscopy (TEM) lattice image analysis has shown that the films consisted of face-centered tetragonal (fct) PtMn (ordered by MFA), body-centered cubic (bcc) NiMn (due to intermixing), in addition to face-centered cubic (fcc) Co, Ni, and PtMn phases. The peak shift (2-theta from 39.9° to 40.3°) in X-ray diffraction spectra also confirmed the structural transition from fcc PtMn to fct PtMn after MFA, in agreement with those obtained by lattice images in TEM. The interdiffusion induced by MFA was also evidenced by the depth profile of X-ray photoelectron spectroscopy (XPS). Further, the magnetic properties measured by vibrating sample magnetometry (VSM) have shown an increased coercivity in MFA-treated samples. This is attributed to the presence of ordered fct PtMn, and NiMn phases exchange coupled to the ferromagnetic [Co/Ni]2 layers. The vertical shift (Mshift = −0.03 memu) of the hysteresis loops is ascribed to the pinned spins resulting from perpendicular MFA processes.

scholarly journals Structural and Magnetic Properties of Ni81Fe19Thin Film Grown on Si(001) Substrate via Single Graphene Layer

2015 ◽  
Vol 2015 ◽  
pp. 1-5 ◽  
Author(s):  
Gui-fang Li ◽  
Shibin Liu ◽  
Shanglin Yang ◽  
Yongqian Du
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Vapor Deposition ◽  
Graphene Layer ◽  
Structural Investigation ◽  
Annealing Temperature ◽  
Chemical Vapor ◽  
Magnetic Thin Films ◽  
Structural And Magnetic Properties

We prepared magnetic thin films Ni81Fe19on single-crystal Si(001) substrates via single graphene layer through magnetron sputtering for Ni81Fe19and chemical vapor deposition for graphene. Structural investigation showed that crystal quality of Ni81Fe19thin films was significantly improved with insertion of graphene layer compared with that directly grown on Si(001) substrate. Furthermore, saturation magnetization of Ni81Fe19/graphene/Si(001) heterostructure increased to 477 emu/cm3with annealing temperatureTa=400°C, which is much higher than values of Ni81Fe19/Si(001) heterostructures withTaranging from 200°C to 400°C.

Magnetic Structure of Multilayers from Soft-X-Ray Magnetic Circular Dichroism

1994 ◽  
Vol 375 ◽  
Author(s):  
C. T. Chen ◽  
Y. U. Idzerda ◽  
C.-C. Kao ◽  
L. H. Tjeng ◽  
H.-J. Lin ◽  
...  
Keyword(s):  
Thin Films ◽  
Circular Dichroism ◽  
Magnetic Circular Dichroism ◽  
Magnetic Thin Films ◽  
X Rays ◽  
X Ray ◽  
Specific Manner ◽  
Left And Right ◽  
The Difference ◽  
Circular Dichroïsm

AbstractSoft-x-ray magnetic circular dichroism (MCD) is the difference between the absorptivity or reflectivity of left and right circularly polarized soft-x-rays at the magnetically interesting L2,3- edges of 3d transition metals or the M4,5-edges of the 4f rare earth elements. Thanks to its large absorption cross-section and strong MCD effect, this technique has become a powerful new means for probing, in an element- and site-specific manner, the magnetic properties of ultra-thin films and multilayers. Soft-x-ray MCD experiments, recently conducted at the Dragon beamline, are utilized to demonstrate the recent progress in this technique and its applications in the research of magnetic thin films.

Effects of ZnO layer on anisotropy magnetoresistance of Ni81Fe19 films

2014 ◽  
Vol 28 (06) ◽  
pp. 1450043 ◽  
Author(s):  
Shuyun Wang ◽  
Yuanmei Gao ◽  
Tiejun Gao ◽  
Yuan He ◽  
Hui Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Layer Thickness ◽  
Magnetic Thin Films ◽  
Anisotropic Magnetoresistance ◽  
Experimental Conditions ◽  
Method Effects ◽  
20 Nm

A series of Ta (4 nm)/ ZnO (t nm )/ Ni 81 Fe 19 (20 nm)/ ZnO (t nm )/ Ta (3 nm) magnetic thin films were prepared on lower experimental conditions by magnetron sputtering method. Effects of ZnO layer thickness and substrate temperature on anisotropic magnetoresistance and magnetic properties of these Ni 81 Fe 19 films have been investigated. The experiment results show that the anisotropic magnetoresistance value of the Ni 81 Fe 19 film is enhanced with the increasing of the inserted ZnO layer thickness. When the ZnO thickness is 2 nm, the anisotropic magnetoresistance value achieves the maximum. In addition, the anisotropic magnetoresistance of the Ni 81 Fe 19 film is also enhanced with the increasing of substrate temperature, and when the temperature is 450°C, the anisotropic magnetoresistance reaches the maximum. The anisotropic magnetoresistance value of 20 nm Ni 81 Fe 19 films with 2 nm ZnO layer can achieve 3.63% at 450°C which is enhanced 11.6% compare with the films without ZnO layer.

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