scholarly journals Effect of End Group–Substrate Interaction on Aggregation Structure of Polystyrene Ultrathin Films

1999 ◽  
Vol 31 (1) ◽  
pp. 89-95 ◽  
Author(s):  
EL Sayed Mounir ◽  
Atsushi Takahara ◽  
Tisato Kajiyama
1999 ◽  
Vol 31 (6) ◽  
pp. 550-556 ◽  
Author(s):  
EL Sayed Ahmed Mounir ◽  
Atsushi Takahara ◽  
Tisato Kajiyama

1995 ◽  
Vol 256 (1-2) ◽  
pp. 205-209 ◽  
Author(s):  
Rong Wang ◽  
Jun Yang ◽  
Hui Wang ◽  
Daxin Tang ◽  
Lei Jiang ◽  
...  

2007 ◽  
Vol 64 (5) ◽  
pp. 269-279
Author(s):  
Tomoyuki KOGA ◽  
Koji HONDA ◽  
Sono SASAKI ◽  
Osami SAKATA ◽  
Atsushi TAKAHARA

2008 ◽  
Author(s):  
S. Capaccioli ◽  
C. Rotella ◽  
M. Bertoldo ◽  
M. Lucchesi ◽  
P. Pingue ◽  
...  

Author(s):  
Yoshichika Bando ◽  
Takahito Terashima ◽  
Kenji Iijima ◽  
Kazunuki Yamamoto ◽  
Kazuto Hirata ◽  
...  

The high quality thin films of high-Tc superconducting oxide are necessary for elucidating the superconducting mechanism and for device application. The recent trend in the preparation of high-Tc films has been toward “in-situ” growth of the superconducting phase at relatively low temperatures. The purpose of “in-situ” growth is to attain surface smoothness suitable for fabricating film devices but also to obtain high quality film. We present the investigation on the initial growth manner of YBCO by in-situ reflective high energy electron diffraction (RHEED) technique and on the structural and superconducting properties of the resulting ultrathin films below 100Å. The epitaxial films have been grown on (100) plane of MgO and SrTiO, heated below 650°C by activated reactive evaporation. The in-situ RHEED observation and the intensity measurement was carried out during deposition of YBCO on the substrate at 650°C. The deposition rate was 0.8Å/s. Fig. 1 shows the RHEED patterns at every stage of deposition of YBCO on MgO(100). All the patterns exhibit the sharp streaks, indicating that the film surface is atomically smooth and the growth manner is layer-by-layer.


Nanomaterials ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 491
Author(s):  
Christoph Metzke ◽  
Fabian Kühnel ◽  
Jonas Weber ◽  
Günther Benstetter

New micro- and nanoscale devices require electrically isolating materials with specific thermal properties. One option to characterize these thermal properties is the atomic force microscopy (AFM)-based scanning thermal microscopy (SThM) technique. It enables qualitative mapping of local thermal conductivities of ultrathin films. To fully understand and correctly interpret the results of practical SThM measurements, it is essential to have detailed knowledge about the heat transfer process between the probe and the sample. However, little can be found in the literature so far. Therefore, this work focuses on theoretical SThM studies of ultrathin films with anisotropic thermal properties such as hexagonal boron nitride (h-BN) and compares the results with a bulk silicon (Si) sample. Energy fluxes from the probe to the sample between 0.6 µW and 126.8 µW are found for different cases with a tip radius of approximately 300 nm. A present thermal interface resistance (TIR) between bulk Si and ultrathin h-BN on top can fully suppress a further heat penetration. The time until heat propagation within the sample is stationary is found to be below 1 µs, which may justify higher tip velocities in practical SThM investigations of up to 20 µms−1. It is also demonstrated that there is almost no influence of convection and radiation, whereas a possible TIR between probe and sample must be considered.


2021 ◽  
Vol 590 ◽  
pp. 72-81
Author(s):  
M.A. Andrés ◽  
P. Fontaine ◽  
M. Goldmann ◽  
C. Serre ◽  
O. Roubeau ◽  
...  

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