scholarly journals Topography of thin films containing Ni-Ga intermetallic compounds formed on GaN(0001)

2016 ◽  
Vol 7 ◽  
pp. 1 ◽  
Author(s):  
Justyna Pers ◽  
Miłosz Grodzicki ◽  
Antoni Ciszewski
Keyword(s):  
Thin Films ◽  
Intermetallic Compounds

Study of Thermodynamic Phase Stability of Intermetallic Thin Films of Pt2Ga, Ptga and PtGa2 on Gallium Arsenide

1989 ◽  
Vol 148 ◽  
Author(s):  
Young K. Kim ◽  
David K. Shuh ◽  
R. Stanley Williams ◽  
Larry P. Sadwick ◽  
Kang L. Wang
Keyword(s):  
Thin Films ◽  
Gallium Arsenide ◽  
Molecular Beam Epitaxy ◽  
Intermetallic Compounds ◽  
Phase Stability ◽  
Molecular Beam ◽  
Epitaxial Thin Films ◽  
X Ray ◽  
Thermodynamic Phase

ABSTRACTEpitaxial thin films of three different Pt-Ga intermetallic compounds have been grown on GaAs by molecular beam epitaxy (MBE). The resultant films have been annealed at various temperatures and then examined using X-ray two-theta diffraction. Both PtGa2 and PtGa thin films are chemically stable on GaAs under 1 atmosphere of N2 up to 450°C and 600°C, respectively. Thin films of Pt2Ga react with GaAs at temperatures as low as 200°C to form phases with higher Ga concentration.

Production of intermetallic compounds from Ti/Al and Ni/Al multilayer thin films—A comparative study

2009 ◽  
Vol 484 (1-2) ◽  
pp. 335-340 ◽  
Author(s):  
A.S. Ramos ◽  
M.T. Vieira ◽  
J. Morgiel ◽  
J. Grzonka ◽  
S. Simões ◽  
...  
Keyword(s):  
Thin Films ◽  
Comparative Study ◽  
Intermetallic Compounds ◽  
Multilayer Thin Films

scholarly journals A fivefold UO22+ node is a path to dodecagonal quasicrystal approximants in coordination polymers

2020 ◽  
Vol 6 (5) ◽  
pp. eaay7685 ◽  
Author(s):  
Volodymyr Smetana ◽  
Steven P. Kelley ◽  
Anja-Verena Mudring ◽  
Robin D. Rogers
Keyword(s):  
Thin Films ◽  
Coordination Chemistry ◽  
Liquid Crystals ◽  
Intermetallic Compounds ◽  
Coordination Polymers ◽  
Uranyl Ions ◽  
Scientific Theories ◽  
Bridging Ligands ◽  
Soft Systems ◽  
Common Area

Aperiodic formations continue to focus interest in areas ranging from advanced scientific theories to practical everyday applications. Starting from diverse and tightly bonded intermetallic compounds, this world showed an important breakthrough toward the so-called soft systems of meso/macroscale: liquid crystals, thin films, polymers, proteins, etc. This work opens a route for making bulk quasicrystals (QC) in an unprecedented but very common area, with molecular ligands. Since these systems are, to a large extent, transparent, they extend the possible areas of QC application to previously unreachable corners, e.g., photonics. We combined efficient bridging ligands with uranyl pentagonal bonding centers and, unexpectedly, brought the unique attributes of f-element coordination chemistry to an interdisciplinary area of aperiodic formations. Taking advantage of the planar coordination of uranyl ions, we were able to direct the structure expansion solely in two directions with a characteristic snub square tiling, a predicted but previously unobtainable dodecagonal approximant.

Formation of thin films of NiSi: Metastable structure, diffusion mechanisms in intermetallic compounds

1984 ◽  
Vol 55 (12) ◽  
pp. 4208-4218 ◽  
Author(s):  
F. d’Heurle ◽  
C. S. Petersson ◽  
J. E. E. Baglin ◽  
S. J. La Placa ◽  
C. Y. Wong
Keyword(s):  
Thin Films ◽  
Intermetallic Compounds ◽  
Metastable Structure ◽  
Diffusion Mechanisms

scholarly journals Microstructure and Optical Properties of Nanostructural Thin Films Fabricated through Oxidation of Au–Sn Intermetallic Compounds

Materials ◽  
2021 ◽  
Vol 14 (14) ◽  
pp. 4034
Author(s):  
Lukasz Skowronski ◽  
Marek Trzcinski ◽  
Aleksandra Olszewska ◽  
Robert Szczesny
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Metal Oxide ◽  
Intermetallic Compounds ◽  
Photoelectron Spectroscopy ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Oxide Systems ◽  
Strong Absorption Band ◽  
X Ray

AuSn and AuSn2 thin films (5 nm) were used as precursors during the formation of semiconducting metal oxide nanostructures on a silicon substrate. The nanoparticles were produced in the processes of annealing and oxidation of gold–tin intermetallic compounds under ultra-high vacuum conditions. The formation process and morphology of a mixture of SnO2 and Au@SnOx (the core–shell structure) nanoparticles or Au nanocrystalites were carefully examined by means of spectroscopic ellipsometry (SE), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), and transmission electron microscopy (TEM) combined with energy-dispersive X-ray spectroscopy (EDX). The annealing and oxidation of the thin film of the AuSn intermetallic compound led to the formation of uniformly distributed structures with a size of ∼20–30 nm. All of the synthesized nanoparticles exhibited a strong absorption band at 520–530 nm, which is typical for pure metallic or metal oxide systems.

Structural and chemical stability of thin films of Pt–Ga intermetallic compounds of GaAs(001)

1990 ◽  
Vol 5 (10) ◽  
pp. 2139-2151 ◽  
Author(s):  
Young K. Kim ◽  
Delroy A. Baugh ◽  
David K. Shuh ◽  
R. Stanley Williams ◽  
Larry P. Sadwick ◽  
...  
Keyword(s):  
Thin Films ◽  
Intermetallic Compounds ◽  
Single Phase ◽  
Annealing Temperature ◽  
Photoemission Spectroscopy ◽  
X Ray ◽  
Gaas Substrates ◽  
As Species ◽  
Xrd Patterns ◽  
Deposited Films

Nearly single-phase thin films of three different Pt–Ga intermetallic compounds have been grown on GaAs(001) by co-deposition of Pt and Ga. The resultant films have been annealed at various temperatures and then characterized using x-ray two-theta diffractometry (XRD), Auger electron spectroscopy (AES), and x-ray photoemission spectroscopy (XPS). The XRD results showed that PtGa2 and PtGa thin films are chemically stable on GaAs under one atmosphere of N2 up to 800 °C and 600 °C, respectively, but thin films of Pt2Ga react with GaAs at temperatures as low as 200 °C to form phases with higher Ga concentration PtAs2. The XRD patterns also revealed that the crystallite orientation and texture of the films were dependent on annealing temperature. Segregation of Ga to the surfaces of the films upon annealing was also observed by both AES and XPS. The results demonstrated that the as-deposited films of PtGa2 and PtGa were kinetically stabilized with respect to possible chemical reactions with the GaAs substrates that evolve gaseous As species during open system annealing.

scholarly journals Surface structures of In-Pd intermetallic compounds. I. Experimental study of In thin films on Pd(111) and alloy formation

2014 ◽  
Vol 141 (8) ◽  
pp. 084702 ◽  
Author(s):  
G. M. McGuirk ◽  
J. Ledieu ◽  
É. Gaudry ◽  
M.-C. de Weerd ◽  
V. Fournée
Keyword(s):  
Thin Films ◽  
Experimental Study ◽  
Intermetallic Compounds ◽  
Surface Structures ◽  
Alloy Formation
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