scholarly journals Calculation of indicators of resistance of work of digital chips in CAD

10.12737/8494 ◽  
2015 ◽  
Vol 4 (4) ◽  
pp. 291-300 ◽  
Author(s):  
Ачкасов ◽  
V. Achkasov ◽  
Чевычелов ◽  
Yu. Chevychelov ◽  
Анциферова ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Computer Aided Design ◽  
Pulse Shape ◽  
Neutron Radiation ◽  
Neutron Pulse ◽  
X Ray ◽  
Different Types ◽  
Radiation Resistant ◽  
Aided Design ◽  
The Impact

The technique of radiation-resistant design of integrated circuits in computer-aided design is presented and comparisons with expert data are provided, which are affected by these types of radiations like gam-ma, x-ray and neutron radiation, as well as the impact of the neutron pulse, which affect largely, on the gain of the transistor are examined. Different types of cardinality doses are represented that affect the crystals of integrated circuits based on the real pulse shape of artificial intelligence.

Modelling of ionization effects and the effects of displacement in digital chips for CAD

10.12737/8491 ◽  
2015 ◽  
Vol 4 (4) ◽  
pp. 280-290 ◽  
Author(s):  
Ачкасов ◽  
V. Achkasov ◽  
Чевычелов ◽  
Yu. Chevychelov ◽  
Анциферова ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Dose Rate ◽  
Fault Tolerant ◽  
Neutron Radiation ◽  
Operating Mode ◽  
Neutron Pulse ◽  
X Ray ◽  
Ionization Current ◽  
Collector Junction ◽  
The Impact

The methods of design of digital fault-tolerant bipolar integrated circuits to exposure to radiations such as gamma, x-ray and neutron radiation are considered, as well as the impact of the neutron pulse, which af-fect largely on the gain of the transistor. The operating mode of integrated circuits with change in the ini-tial values of voltages, as well as currents of the emitter and of the base is presented. Numerical calcula-tions of the ionization current in the base-collector junction are considered which allow pre-calculate dose rate of gamma, x-ray and neutron radiation.

Analyzing the Impact of X-Ray Tomography on the Reliability of Integrated Circuits

2015 ◽  
Author(s):  
Halit Dogan ◽  
Md Mahbub Alam ◽  
Navid Asadizanjani ◽  
Sina Shahbazmohamadi ◽  
Domenic Forte ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Integrated Circuit ◽  
3D Imaging ◽  
Three Dimensional ◽  
Serial Sectioning ◽  
Promising Technique ◽  
Flash Memories ◽  
X Ray ◽  
3D Information ◽  
The Impact

Abstract X-ray tomography is a promising technique that can provide micron level, internal structure, and three dimensional (3D) information of an integrated circuit (IC) component without the need for serial sectioning or decapsulation. This is especially useful for counterfeit IC detection as demonstrated by recent work. Although the components remain physically intact during tomography, the effect of radiation on the electrical functionality is not yet fully investigated. In this paper we analyze the impact of X-ray tomography on the reliability of ICs with different fabrication technologies. We perform a 3D imaging using an advanced X-ray machine on Intel flash memories, Macronix flash memories, Xilinx Spartan 3 and Spartan 6 FPGAs. Electrical functionalities are then tested in a systematic procedure after each round of tomography to estimate the impact of X-ray on Flash erase time, read margin, and program operation, and the frequencies of ring oscillators in the FPGAs. A major finding is that erase times for flash memories of older technology are significantly degraded when exposed to tomography, eventually resulting in failure. However, the flash and Xilinx FPGAs of newer technologies seem less sensitive to tomography, as only minor degradations are observed. Further, we did not identify permanent failures for any chips in the time needed to perform tomography for counterfeit detection (approximately 2 hours).

scholarly journals Electrostatic Discharge Characteristics of SiGe Source/Drain PNN Tunnel FET

Electronics ◽  
2021 ◽  
Vol 10 (4) ◽  
pp. 454
Author(s):  
You Wang ◽  
Yu Mao ◽  
Qizheng Ji ◽  
Ming Yang ◽  
Zhaonian Yang ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Computer Aided Design ◽  
Field Effect ◽  
Electrostatic Discharge ◽  
Field Effect Transistors ◽  
Test Method ◽  
Current Path ◽  
Simulation Results ◽  
Current Characteristics ◽  
Aided Design

Gate-grounded tunnel field effect transistors (ggTFETs) are considered as basic electrostatic discharge (ESD) protection devices in TFET-integrated circuits. ESD test method of transmission line pulse is used to deeply analyze the current characteristics and working mechanism of Conventional TFET ESD impact. On this basis, a SiGe Source/Drain PNN (P+N+N+) tunnel field effect transistors (TFET) was proposed, which was simulated by Sentaurus technology computer aided design (TCAD) software. Simulation results showed that the trigger voltage of SiGe PNN TFET was 46.3% lower, and the failure current was 13.3% higher than Conventional TFET. After analyzing the simulation results, the parameters of the SiGe PNN TFET were optimized. The single current path of the SiGe PNN TFET was analyzed and explained in the case of gate grounding.

scholarly journals Characterisation of the Filler Fraction in CAD/CAM Resin-Based Composites

Materials ◽  
2021 ◽  
Vol 14 (8) ◽  
pp. 1986
Author(s):  
Andreas Koenig ◽  
Julius Schmidtke ◽  
Leonie Schmohl ◽  
Sibylle Schneider-Feyrer ◽  
Martin Rosentritt ◽  
...  
Keyword(s):  
Computer Aided Design ◽  
Point Of View ◽  
Specific Information ◽  
Dental Resin ◽  
X Ray ◽  
Computer Aided ◽  
Cad Cam ◽  
Filler Fraction ◽  
The Individual ◽  
Aided Design

The performance of dental resin-based composites (RBCs) heavily depends on the characteristic properties of the individual filler fraction. As specific information regarding the properties of the filler fraction is often missing, the current study aims to characterize the filler fractions of several contemporary computer-aided design/computer-aided manufacturing (CAD/CAM) RBCs from a material science point of view. The filler fractions of seven commercially available CAD/CAM RBCs featuring different translucency variants were analysed using Scanning Electron Microscopy (SEM) with Energy Dispersive X-ray Spectroscopy (EDS), Micro-X-ray Computed Tomography (µXCT), Thermogravimetric Analysis (TG) and X-ray Diffractometry (XRD). All CAD/CAM RBCs investigated included midifill hybrid type filler fractions, and the size of the individual particles was clearly larger than the individual specifications of the manufacturer. The fillers in Shofu Block HC featured a sphericity of ≈0.8, while it was <0.7 in all other RBCs. All RBCs featured only X-ray amorphous phases. However, in Lava Ultimate, zircon crystals with low crystallinity were detected. In some CAD/CAM RBCs, inhomogeneities (X-ray opaque fillers or pores) with a size <80 µm were identified, but the effects were minor in relation to the total volume (<0.01 vol.%). The characteristic parameters of the filler fraction in RBCs are essential for the interpretation of the individual material’s mechanical and optical properties.

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